IPD65R225C7ATMA1 - 650V 225mΩ 11A CoolMOS C7 N-FET | Infineon
MPN: IPD65R225C7ATMA1 ✓ Hoạt độngIPD65R225C7ATMA1 Tóm tắt
A power MOSFET is a voltage-controlled three-terminal semiconductor switch (gate, drain, source) that conducts current between drain and source when a gate-source voltage above its threshold is applied. Super-junction MOSFETs such as the CoolMOS C7 family replace the conventional planar DMOS structure with alternating P/N epitaxial columns, dramatically reducing on-resistance per unit area and cutting switching-charge losses. Within the broader taxonomy, this part belongs to: N-channel MOSFET -> power MOSFET -> discrete semiconductor -> high-voltage SJ MOSFET family.
Key features include a 650 V drain-source breakdown voltage (VDSS), typical RDS(on) of 225 mΩ at VGS = 10 V, low gate charge (Qg) optimized for high-frequency operation, an integrated body diode for hard commutation, and increased dv/dt ruggedness. The CoolMOS C7 series delivers the lowest Figure-of-Merit (RDS(on) × Qg) of any 600/650 V MOSFET in its generation, enabling smaller magnetics and higher power density in switched-mode power supplies.
The architecture uses charge-compensation pillars in the drift region to simultaneously achieve low RDS(on) and low Eoss, reducing both conduction and turn-on switching losses. Compared with the preceding C3/C6 generations, C7 trims Qg, Qgd, and Eoss by roughly 30-50%, which directly translates to lower switching losses at 100 kHz+ PWM frequencies typical of modern SMPS designs.
Typical applications include telecom and server switch-mode power supplies (SMPS), PFC boost stages, LLC and half-bridge resonant converters, industrial motor drives, solar inverters, and EV on-board chargers. Designers select this part when balancing conduction loss against switching loss in 100-500 kHz hard-switched converters, and when needing a thermally efficient surface-mount package that bolts directly to a PCB copper pad as the tab heatsink.
When designing with this device, ensure the gate-drive voltage swings cleanly between 0 V and 10-12 V; under-driven gates inflate RDS(on) and conduction loss. The exposed tab (drain) must be soldered to a copper pad of at least 1 square inch per ampere of continuous drain current, otherwise thermal resistance and SOA derating will be violated.
This page synthesizes distributor pricing, parametric data, and same-family drop-in alternatives across the CoolMOS C7 lineup, providing engineering context not consolidated on the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IPD65R225C7ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD65R225C7ATMA1 (cùng hình factor và footprint) — khác nhau ở Technology, Package, Series, Drain-Source Voltage (VDS), MSL Level.
IPD65R250C6XTMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD65R380C6BTMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPW65R225C7
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
NTHL110N65S3H
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STF11N65M5
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD60R600P7SAUMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD65R225C7ATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C7 |
| Kiểu transitor | N-Channel MOSFET |
| Technology | Super-junction (SJ) / CoolMOS |
| Drain-Source Voltage (VDSS) | 650 V |
| Continuous Drain Current (ID) at TC | 11 A |
| Power Dissipation (PD) at TC | 63 W |
| On-Resistance RDS(on) max | 225 mΩ |
| Gate-Source Voltage (VGS) | ±20 V (max) |
| Khoảng nhiệt độ hoạt động | -55°C to +150°C |
| Hộp | PG-TO252-3 (DPAK) |
| Kiểu lắp đặt | Surface Mount |
| Số lượng chân | 3 (2 + tab) |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Avalanche Energy Rated | Yes (per datasheet) |
Cấu hình chân IPD65R225C7ATMA1
| Chân 1 | Gate — Gate drive input; voltage-controlled terminal |
| Chân 2 | Drain — Drain terminal (also connected to metal tab/backside) |
| Chân 3 | Source — Source terminal; return for gate-drive and load current |
Khu vực hoạt động an toàn (DC, TC = 25°C)
Ứng dụng tiêu biểu
IPD65R225C7ATMA1 phù hợp cho 6 Áp dụngs: Server & Telecom Switch-Mode Power Supply (SMPS), Power Factor Correction (PFC) Boost Stage, Solar String Inverter, EV On-Board Charger (OBC) PFC Stage, Industrial Motor Drive (Variable-Frequency Drive VFD), LLC Resonant Half-Bridge Converter.
Server & Telecom Switch-Mode Power Supply (SMPS)
The IPD65R225C7ATMA1 is well-matched to server and telecom PSU primary-side switches because its 650 V VDSS comfortably handles 380 VDC rectified bus voltages from universal mains input, while 225 mΩ RDS(on) at VGS = 10 V limits conduction loss in 1-2 kW half-bridge or full-bridge topologies. The CoolMOS C7 generation's reduced Eoss lowers turn-on loss when paired with a SiC or fast-Si diode, enabling switching frequencies of 100-150 kHz that shrink the main transformer. Compared with planar MOSFETs, the SJ architecture cuts both RDS(on)·Qg and Qrr-related cross-conduction losses, allowing higher power density per cubic inch of PSU chassis.
Được đề xuất
Power Factor Correction (PFC) Boost Stage
In a continuous-conduction-mode PFC boost stage, the IPD65R225C7ATMA1 serves as the boost switch operating at 65-130 kHz PWM. Its 650 V VDSS tolerates 400 VDC output plus inductive overshoot, while the CoolMOS C7's low Qgd reduces the Miller plateau duration and accelerates turn-off, suppressing ringing on the boost diode. With 11 A continuous drain current and 225 mΩ RDS(on), a single IPD65R225C7ATMA1 supports PFC stages up to about 1.5 kW before the conduction loss forces a parallel-device or TO-247 step. The DPAK package's low thermal resistance (~50°C/W on 1 oz copper) keeps the heatsink compact in 1U server form factors.
Được đề xuất
Solar String Inverter
The IPD65R225C7ATMA1 fits single-phase string inverters up to 3 kW as the boost switch in the DC-DC stage or as the primary switch in the DC-AC inverter bridge. Its 650 V rating handles 400-450 VDC PV-bus voltages with avalanche margin, while the 225 mΩ RDS(on) keeps conduction loss below 1% of throughput power at typical operating points. The CoolMOS C7 generation's increased dv/dt ruggedness ensures reliability under the harsh switching conditions of grid-tie inverters, where reactive load steps impose fast voltage transients. Outdoor-rated solar inverters also benefit from the part's -55°C to +150°C operating junction range, accommodating cold-start and full-power summer conditions.
Được đề xuất
EV On-Board Charger (OBC) PFC Stage
In 3.3 kW or 6.6 kW on-board chargers, the IPD65R225C7ATMA1 can be paralleled in the PFC boost stage where 650 V breakdown meets the rectified 400 VDC link. Two paralleled IPD65R225C7ATMA1 devices share current at 22 A combined, halving the effective RDS(on) to roughly 113 mΩ and reducing conduction loss by 50%. The DPAK package's small footprint supports the dense PCB layouts required by automotive OBC enclosures, and Infineon's automotive-grade CoolMOS C7 family provides the reliability data needed for AEC-Q100-based EV power-electronics designs. Designers transitioning from industrial to automotive should evaluate the IAUC100N10S5N040ATMA1 family for full automotive qualification.
Được đề xuất
Industrial Motor Drive (Variable-Frequency Drive VFD)
Industrial low-voltage VFDs operating from 400-480 VAC three-phase rectified mains (565-680 VDC bus) frequently use 650 V MOSFETs in the inverter stage for motors up to 2-3 kW. The IPD65R225C7ATMA1's 650 V VDSS tolerates the rectified bus with avalanche margin, and the CoolMOS C7's low Eoss reduces turn-on loss in hard-switched space-vector-modulated bridges. The DPAK package's screw-down heatsink mounting makes field service easier than SMD-only MOSFETs, while still preserving surface-mount assembly for the low-current gate-drive circuitry. For higher-power drives above 5 kW, designers step up to TO-247 or SOT-227 packages with lower thermal resistance.
Được đề xuất
LLC Resonant Half-Bridge Converter
The IPD65R225C7ATMA1 functions as either primary-side switch in a half-bridge LLC resonant converter delivering 500 W to 2 kW. CoolMOS C7's low output capacitance (Coss) and reduced Qoss are critical for LLC operation, because the resonant tank charges and discharges Coss every cycle - lower Qoss means less circulating current and higher efficiency. The 650 V VDSS handles the resonant tank peak voltages safely, while the 225 mΩ RDS(on) provides acceptable conduction loss at the moderate currents of an LLC primary (typically 5-9 A RMS for a 1 kW design). The DPAK package's small footprint supports the high-density PCB layouts typical of flat-panel TV and notebook adapter power supplies.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD65R225C7ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD65R250C6XTMA1 | IPD65R380C6BTMA1 | NTHL110N65S3H | STF11N65M5 | IPD60R600P7SAUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Technology | CoolMOS C7 (SJ) | CoolMOS C6 (SJ) | CoolMOS C6 (SJ) | NSP SJ | MDmesh M5 (SJ) | CoolMOS P7 (SJ) |
| VDSS (V) | 650 | 650 | 650 | 650 | 650 | 600 |
| RDS(on) max (mΩ) | 225 | 250 | 380 | 220 (typ) | 280 (typ) | 600 |
| Continuous ID (A) at TC | 11 | 11 | 10 | 11 | 11 | 6 |
| Power Dissipation (W) at TC | 63 | 63 | 63 | 65 | 60 | 36 |
| Generation / Era | CoolMOS C7 (current gen) | CoolMOS C6 (prior gen) | CoolMOS C6 (prior gen) | onsemi NSP current | ST MDmesh M5 | CoolMOS P7 (cost-opt) |
Bảo phân biệt quan trọng
- Latest CoolMOS C7 generation - lowest FoM in 650V class (vsIPD65R250C6XTMA1)
- 650 V VDSS - 8% voltage headroom over 600V alternatives (vsIPD60R600P7SAUMA1)
- Higher continuous drain current than cost-optimized P7 (vsIPD60R600P7SAUMA1)
Ghi chú thiết kế
Estimated: at ID = 5 A continuous, VBUS = 400 V, and assuming a 70% duty cycle, the conduction loss in the IPD65R225C7ATMA1 is Pcond ≈ ID² · RDS(on) · 0.7 ≈ 5² · 0.225 · 0.7 = 3.9 W. With a DPAK thermal resistance of ~50°C/W on 1 oz copper (per the Infineon datasheet layout guidelines), the junction rises ~195°C above ambient - clearly exceeding the 150°C junction limit. Either increase copper area to at least 2 square inches (dropping θJA to ~25°C/W) or force-air cool the heatsink. Always validate with the SOA curve in the datasheet at the worst-case operating point.
The exposed drain tab of the IPD65R225C7ATMA1 must be soldered to a copper pour that extends at least to the edge of the DPAK land pattern. Recommended footprint per Infinean application notes: 6 mm × 8 mm drain pad with thermal vias (0.3 mm diameter, 1 mm pitch) connecting to a 2 oz inner-plane copper heatsink. Place the gate-drive resistor and gate-source pull-down resistor within 5 mm of the gate pin to minimize parasitic inductance that causes Miller-platform oscillations in hard-switched applications.
Keep the high-current drain loop (DC+ bus capacitor → MOSFET drain → source → ground return) as physically small as possible - target loop area below 1 cm² to limit stray inductance. The CoolMOS C7 family has high dv/dt (typically 50 V/ns), and loop inductance causes voltage overshoot that can push VDSS beyond its 650 V rating during turn-off. Place a 100 nF X7R snubber or RC damper across the device if overshoot exceeds 80% of VDSS during worst-case switching transients.
Do not gate-drive the IPD65R225C7ATMA1 with VGS above ±20 V - the datasheet absolute maximum is ±20 V, and exceeding this destroys the gate oxide. Many designers use 12 V gate drives for C7; this is safe but pushes RDS(on) 5-10% higher than the 10 V datasheet test condition. Below VGS = 8 V the device may not fully enhance, inflating RDS(on) by 2× or more. For low-side switch applications, use a dedicated gate-driver IC (such as UCC27714 or Infineon 1EDN7511B) rather than a logic-level GPIO, which cannot source sufficient peak gate current for fast switching.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page; not AEC-Q100 qualified (industrial grade only - for automotive use, consider the automotive-grade CoolMOS C7 variants in the IAUC family). Halogen-free per JEDEC JS709B.
