IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon
Référence : IPD038N06N3GATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.42 | $1,42 |
| 10 | $1.18 | $11,80 |
| 100 | $0.96 | $96,00 |
| 500 | $0.82 | $410,00 |
| 1 000 | $0.71 | $710,00 |
| 2 500 | $0.65 | $1 625,00 |
IPD038N06N3GATMA1 Présentation
An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source voltage inverts the surface of the P-region beneath the gate oxide, forming an N-channel that conducts current between drain and source. In the broader taxonomy, this places the IPD038N06N3GATMA1 inside: power MOSFET -> discrete MOSFET -> discrete semiconductor -> power management component. The "low-voltage, very-high-current" segment of this hierarchy is dominated by 40 V-100 V MOSFETs optimized for synchronous rectification in switched-mode power supplies (SMPS), where conduction and switching losses directly determine overall system efficiency.
Key features include 60 V VDS max, 90 A ID continuous (Tc), ±20 V VGS rating, 188 W power dissipation (Tc), and a low on-resistance of 3.8 mΩ typical at 10 V VGS. The OptiMOS 60 V generation uses a trench-cell structure with an optimized P-body profile that minimizes RDS(on) × Qg figure of merit, while the 4 V typical VGS(th) ensures robust compatibility with 5 V-12 V gate-drive signals common in digital controllers.
Internally the device uses Infineon's advanced trench MOSFET technology, which achieves a low specific on-resistance per unit silicon area. This enables the 3.8 mΩ/90 A rating in a compact TO-252 outline rather than the larger D2PAK or TO-220 packages older planar generations required. The part is rated MSL1 (moisture sensitivity level 1) and is fully RoHS-compliant and halogen-free.
Typical applications include synchronous rectification in server, desktop and tablet SMPS, DC-DC converter high-side/low-side switches, motor-control H-bridges, solar micro-inverters, and battery-protection circuits in 12 V-36 V lithium packs. The low gate charge and low output capacitance also make it well-suited for high-frequency hard-switched topologies.
When designing with this MOSFET, plan thermal management around the TO-252 footprint. With 188 W Tc-rated power dissipation the junction can run near 175 °C at full load without proper PCB copper heatsinking; an exposed thermal pad soldered to a 1-2 square-inch copper pour keeps thermal resistance (RθJA) typically below 50 °C/W.
This page synthesizes distributor pricing, drop-in alternative part numbers in the same TO-252 footprint, and practical PCB design notes that go beyond the manufacturer datasheet's typical-characteristics graphs.
Alternatives de remplacement direct pour IPD038N06N3GATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IPD038N06N3GATMA1 (même facteur de forme et même empreinte) — différant par Technology, Package, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at Tc, FET Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IPD50N06S409ATMA2
✅ Remplacement direct✓ En stock
$0.49 / unité
Voir la fiche technique →IPD038N04N4GBTMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPB110P06LMATMA1
✅ Remplacement direct✓ En stock
$1.31 / unité
Voir la fiche technique →IPD65R380E6ATMA1
✅ Remplacement direct✓ En stock
$0.65 / unité
Voir la fiche technique →IPD038N06N3GATMA1 Valeurs maximales et caractéristiques électriques
| FET Type | N-Channel MOSFET |
| Series | OptiMOS 60V |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc | 90 A |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 4 V (typ) |
| On-Resistance (RDS(on)) at VGS=10V | 3.8 mΩ |
| Total Power Dissipation (PD) at Tc | 188 W |
| Boîtier | PG-TO252-3 (DPAK) |
| Type de montage | Surface Mount |
| Niveau MSL | 1 |
| Statut RoHS | Compliant |
| Sans halogène | Yes |
| Lead-Free | Yes |
| Technology | OptiMOS trench MOSFET |
| Polarity | N-Channel |
Configuration des broches de IPD038N06N3GATMA1
| Broche 1 | Gate — Gate input; drive with 10 V for lowest RDS(on) |
| Broche 2 | Drain — Drain (electrically connected to the metal tab) |
| Broche 3 | Source — Source return |
| Broche Tab | Drain (Thermal) — Metal back-tab - solder to copper pour for thermal dissipation; electrically tied to Drain (pin 2) |
Zone de fonctionnement sûr
Applications typiques
IPD038N06N3GATMA1 convient pour 6 applications: Synchronous Rectification in Server SMPS, Desktop & Tablet Charger Adapters, Industrial Motor Control H-Bridge, Solar Micro-Inverter High-Frequency Stage, Hard-Switched DC-DC Converter, Battery Protection & Load Switch.
Synchronous Rectification in Server SMPS
The IPD038N06N3GATMA1 is purpose-built for synchronous-rectifier (SR) stages in 12 V and 24 V server SMPS, where the 3.8 mΩ RDS(on) at 10 V VGS keeps conduction loss under 1% of throughput power. At 50 A secondary-side current, conduction loss is ~9.5 W versus 14 W for typical 5 mΩ alternatives, directly improving 80 PLUS Titanium efficiency targets. The TO-252 package supports 100-200 kHz switching common in modern LLC and phase-shift full-bridge topologies.
Recommandé
Desktop & Tablet Charger Adapters
In 65-100 W USB-PD laptop chargers and tablet adapters, the IPD038N06N3GATMA1 serves as the primary-side or secondary-side synchronous switch, where its 60 V VDS comfortably handles 19-20 V output rails with margin. The 3.8 mΩ RDS(on) enables >94% end-to-end adapter efficiency required for ENERGY STAR v8 compliance. OptiMOS 60V low gate charge (~50 nC typical) supports QR-mode and active-clamp flyback switching frequencies above 150 kHz, shrinking magnetic component size.
Recommandé
Industrial Motor Control H-Bridge
The IPD038N06N3GATMA1 fits low-voltage 12-36 V brushed and BLDC motor-drive half-bridges where 90 A peak drain current supports direct PWM switching of fractional-horsepower industrial motors. The 60 V VDS rating tolerates regenerative brake kickback transients on 24 V bus systems. Mounted in a DPAK package, it enables compact PCB layouts for servo drives, conveyor control, and small robotics where thermal performance and footprint density are critical.
Recommandé
Solar Micro-Inverter High-Frequency Stage
In 200-600 W residential solar micro-inverters, the IPD038N06N3GATMA1 operates in the high-frequency DC-DC stage following the PV panel, where its 60 V VDS handles 36-cell panel open-circuit voltages up to 44 V with safe derating. The low gate charge (~50 nC) and low output capacitance minimize switching loss at 100+ kHz, enabling compact toroidal magnetics. Efficiency above 96% at full load directly translates to higher kWh harvest in field installations.
Recommandé
Hard-Switched DC-DC Converter
The IPD038N06N3GATMA1 is well-suited as the synchronous FET in 12 V-48 V hard-switched buck and buck-boost converters, where its 3.8 mΩ RDS(on) at 10 V VGS keeps efficiency above 95% at 30-50 A loads. The 60 V VDS covers 48 V telecom bus rails with adequate margin for transients. The TO-252 package is footprint-compatible with most 60V-rated DPAK MOSFETs, allowing design reuse across product variants.
Recommandé
Battery Protection & Load Switch
The IPD038N06N3GATMA1 functions as a high-side or low-side load switch in 12 V-36 V lithium battery packs, where its 60 V VDS comfortably exceeds the maximum charged voltage of 4S-7S Li-ion packs. The 3.8 mΩ RDS(on) minimizes voltage drop during peak discharge, preserving usable pack capacity. Combined with a battery monitor IC, it implements <1 ms short-circuit disconnect for cell-level protection required by UL 1973.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IPD038N06N3GATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IPD50N06S409ATMA2 | IPD038N04N4GBTMA1 | IPB110P06LMATMA1 | IPD65R380E6ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 40 V | 60 V (P-channel) | 650 V |
| On-Resistance (RDS(on)) at 10V | 3.8 mΩ | 5.0 mΩ | 3.8 mΩ | 11 mΩ | 0.38 Ω |
| Polarity | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel |
| Technology Family | OptiMOS 60V | StrongIRFET | OptiMOS 40V | OptiMOS P 60V | CoolMOS |
Principaux différenciateurs
- Lowest RDS(on) in Infineon's 60V DPAK OptiMOS family (vs IPD50N06S409ATMA2)
- Higher VDS margin for 24V battery and 48V telecom systems (vs IPD038N04N4GBTMA1)
- Higher continuous current rating than P-channel counterpart (vs IPB110P06LMATMA1)
Notes de conception
The TO-252 (DPAK) package dissipates 188 W at 25 °C case temperature, but in real PCB designs RθJA is the limiting factor. Estimated: with 1 square inch of top-side copper pour (1 oz), RθJA is ~50 °C/W; at 50 A load (conduction loss ~9.5 W) the junction rises ~70 °C above ambient - acceptable for a 25 °C ambient industrial environment. For higher currents, expand the copper pour to 2-3 square inches or add a topside heatsink. Always derate to a maximum junction temperature of 125 °C for reliability.
Layout is critical for high-current MOSFET performance. Place the gate drive loop (gate resistor → gate → source return) within 5 mm of the package to minimize parasitic inductance. Use a 4-layer PCB with a dedicated ground plane immediately below the TO-252 footprint; this reduces source-inductance-induced gate ringing that can exceed ±20 V VGS and damage the gate oxide. Keep the power loop (input cap → high-side FET → low-side FET → GND) compact - every 10 nH adds ~40 V of switching transient at 4 A/ns.
Common pitfalls include: (1) exceeding ±20 V VGS - never drive the gate above 20 V or below -20 V, even transiently; (2) ignoring body-diode reverse recovery - this MOSFET's body diode is optimized for low Qrr, but in half-bridge topologies add sufficient dead-time (>50 ns) to prevent shoot-through; (3) operating above maximum junction temperature (175 °C) drastically reduces lifetime - the Arrhenius model halves lifetime for every 10 °C increase; (4) omitting the gate-source pull-down resistor (10 kΩ) leaves the part vulnerable to unintended turn-on during hot-plug or ESD events.
Informations de conformité
RoHS compliant and halogen-free per manufacturer datasheet. MSL1 rated per JEDEC J-STD-020. Not AEC-Q100 qualified - for automotive applications, choose AEC-Q100 graded variants.
