IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
MPN: IPD90N03S4L02ATMA1 ✓ Hoạt độngIPD90N03S4L02ATMA1 Tóm tắt
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch that uses a gate oxide to modulate a conductive channel between source and drain. In the OptiMOS-T2 family, an N-channel trench-gate cell shrinks the R_DS(on) x area figure of merit, falling under the broader power MOSFET hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor. This places the part firmly inside Infineon's automotive-grade discrete semiconductor portfolio optimized for 12 V/24 V vehicle bus systems.
Key features include a 2.2 mΩ maximum R_DS(on) at VGS=10 V, 4.5 V to 10 V gate-drive compatibility for direct MCU/PWM control, and an operating junction range up to 175°C. The device is AEC-Q101 qualified, MSL1 rated for up to 260°C peak reflow, and shipped in a Green Package that is RoHS compliant. Per datasheet, the part is 100% avalanche tested, providing proven ruggedness for unclamped inductive switching events common in motor windings and solenoid loads.
The OptiMOS-T2 cell architecture uses a vertical trench with a split-gate structure that reduces gate charge (Qg) and Miller capacitance (Cgd) versus the prior OptiMOS generation. This lowers switching energy at high PWM frequencies (50-300 kHz), enabling smaller magnetics in synchronous buck converters and reduced dead-time loss in half-bridges. The 175°C junction rating also sustains continuous high-current operation in sealed under-hood enclosures.
Typical applications include automotive electronic power steering (EPS), brushed DC and BLDC motor drives, LED driving and headlamp load management, DC-DC synchronous buck and synchronous rectification stages, battery protection and hot-swap circuits, and industrial solenoid/relay drivers. The wide safety margin between 90 A continuous rating and typical 30-40 A application currents supports robust inrush handling.
When designing with this part, derate continuous drain current to roughly 60-70 A in a real PCB layout with limited copper pour, and verify gate-drive strength to fully enhance the channel (VGS ≥ 10 V recommended). The exposed tab on the PG-TO252-3-11 package must be soldered to a thermal pad of at least 1 sq. in. copper for full 136 W dissipation capability.
This page consolidates distributor pricing, parametric drop-in alternatives, and practical PCB-thermal design notes that go beyond the manufacturer datasheet to give automotive and industrial design engineers a faster, more confident selection workflow.
Bộ thay thế dễ dàng lắp đặt cho IPD90N03S4L02ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPD90N03S4L02ATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Operating Temperature Range, Technology, MSL Level, RoHS Status.
IPD90N03S4L-02
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPD090N03LGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD031N06L3GATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC014N06NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC027N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPT007N06NATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPD90N03S4L02ATMA1 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Tc | 90 A |
| Power Dissipation (PD) at Tc | 136 W |
| RDS(on) Max at VGS=10 V | 2.2 mΩ |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V |
| Nhiệt độ mối nối hoạt động | -55°C to +175°C |
| Avalanche Rated | 100% Avalanche tested |
| Hộp | PG-TO252-3-11 (DPAK, surface mount) |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| Trạng thái RoHS | Compliant (Green Package) |
| Automotive Qualification | AEC-Q101 qualified |
| Series | OptiMOS-T2 |
Cấu hình chân IPD90N03S4L02ATMA1
| Chân 1 | Gate — MOSFET gate drive input; 4.5 V to 10 V enhancement range |
| Chân 2 | Drain — MOSFET drain; also internally connected to the exposed tab |
| Chân 3 | Source — MOSFET source terminal |
Khu vực hoạt động an toàn (DC, Tj=25°C)
Ứng dụng tiêu biểu
IPD90N03S4L02ATMA1 phù hợp cho 6 Áp dụngs: Automotive Electronic Power Steering (EPS), BLDC and Brushed DC Motor Drive, Automotive LED Headlamp and Load Driver, Synchronous Buck DC-DC Converter Low-Side Switch, Battery Protection and Hot-Swap Circuit, Industrial Solenoid and Relay Driver.
Automotive Electronic Power Steering (EPS)
The IPD90N03S4L02ATMA1 is well-suited to EPS motor drive half-bridges because its 30 V VDS safely covers 12 V automotive bus transients up to ~24 V load-dump, while the 2.2 mΩ R_DS(on) at VGS=10 V minimizes conduction loss across the 50-80 A peak motor currents seen during parking maneuvers. The AEC-Q101 qualification is mandatory for under-hood EPS ECUs, and the 100% avalanche rating provides headroom for the regenerative braking current spikes that occur when current is commutated through the body diode during PWM dead-time. The DPAK's 136 W dissipation rating, when paired with a 1 sq. in. copper pour, sustains continuous torque assist without thermal throttling. Designers typically run the part at 25 kHz PWM with VGS=10 V for fully-enhanced switching; the 4.5 V VGS rating also enables direct 5 V MCU logic drive in low-power modes.
Được đề xuất
BLDC and Brushed DC Motor Drive
For 12 V / 24 V BLDC motor inverters and brushed DC H-bridges, the IPD90N03S4L02ATMA1's 90 A continuous rating delivers a 2-3x safety margin above typical 30-40 A motor currents, ensuring long-term reliability under locked-rotor inrush. Its 2.2 mΩ R_DS(on) at VGS=10 V keeps I²R conduction loss below 5 W at 50 A, simplifying thermal design in compact motor-control PCBs. The OptiMOS-T2 cell's low gate charge (Qg) and Miller capacitance enable 50-100 kHz PWM frequencies with reduced switching loss, which is critical for sensorless BLDC trapezoidal commutation. The 175°C junction rating also permits operation in sealed motor housings where ambient can reach 85-100°C.
Được đề xuất
Automotive LED Headlamp and Load Driver
High-brightness LED headlamps and DRL/turn load drivers benefit from the IPD90N03S4L02ATMA1's low R_DS(on) which, at typical 5-10 A LED currents, dissipates only 0.1-0.4 W — eliminating the need for bulky heatsinks in tight headlamp housings. The 30 V VDS rating covers 12 V bus with comfortable transient headroom, and the part's 4.5 V VGS turn-on enables direct drive from 5 V logic for daytime running light PWM dimming at 200-1000 Hz. AEC-Q101 qualification, MSL1 reflow rating, and Green Package RoHS compliance meet automotive lighting module requirements. The 100% avalanche test rating provides a safety margin for the inductive transients generated by the LED wiring harness inductance during PWM edge transitions.
Được đề xuất
Synchronous Buck DC-DC Converter Low-Side Switch
As the low-side synchronous rectifier in a 12 V-to-3.3 V/5 V/1.8 V buck converter, the IPD90N03S4L02ATMA1's 2.2 mΩ R_DS(on) at VGS=10 V produces 1-2% efficiency gain versus Schottky diode rectification at loads above 10 A. The low gate charge of the OptiMOS-T2 cell enables 300-500 kHz switching with minimal dead-time loss, allowing smaller inductors in compact point-of-load designs. The 30 V rating provides adequate margin above 12 V nominal bus voltage plus transients. The exposed-drain DPAK tab solders directly to a copper thermal pad that doubles as a heatsink, supporting 20-30 W continuous output without airflow.
Được đề xuất
Battery Protection and Hot-Swap Circuit
In 12 V lead-acid or Li-ion battery management systems, the IPD90N03S4L02ATMA1 serves as the reverse-battery and over-current disconnect switch. Its 2.2 mΩ R_DS(on) keeps the discharge path loss under 50 mV at 25 A, well within e-fuse accuracy budgets. The 100% avalanche rating and 175°C junction limit provide robust fault handling during external short-circuit events where the MOSFET must absorb the inductive kick from upstream wiring before the fuse clears. AEC-Q101 qualification supports automotive BMS deployment. Designers typically parallel two parts for 100 A+ applications, taking advantage of the DPAK's tab-pinned drain for symmetric current sharing.
Được đề xuất
Industrial Solenoid and Relay Driver
For driving 12 V/24 V solenoids, relays, and contactors in industrial automation, the IPD90N03S4L02ATMA1's 90 A ID handles inrush currents well above the steady-state holding current, while the 30 V VDS tolerates flyback voltage when the coil is de-energized (with a freewheeling diode clamp). The OptiMOS-T2 cell's fast switching enables PWM proportional solenoid control for hydraulic valves, and the AEC-Q101/extended temperature rating permits deployment in sealed factory enclosures up to 85°C ambient. The part's 100% avalanche test means it survives unclamped turn-off transients on the inductive load without an external TVS clamp, simplifying the BOM.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPD90N03S4L02ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPD90N03S4L-02 | IPD090N03LGATMA1 | IPD031N06L3GATMA1 | BSC014N06NSATMA1 | IPT007N06NATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Drain-to-Source Voltage (VDS) | 30 V | 30 V | 30 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (ID @ Tc) | 90 A | 90 A | 90 A | 30 A | 30 A | 100 A |
| RDS(on) Max at VGS=10 V | 2.2 mΩ | 2.2 mΩ | ~2.0 mΩ (newer gen) | 3.1 mΩ | 1.4 mΩ | 0.75 mΩ |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| RoHS / Green Package | Yes | Yes | Yes | Yes | Yes | Yes |
Bảo phân biệt quan trọng
- Higher continuous current rating than the 60 V drop-ins (vsIPD031N06L3GATMA1)
- Proven OptiMOS-T2 cell with established AEC-Q101 supply chain (vsIPD090N03LGATMA1)
- Lower R_DS(on) per area than 60 V parts in the same package (vsBSC014N06NSATMA1)
Ghi chú thiết kế
Estimated: at 50 A continuous conduction with VGS=10 V and 2.2 mΩ R_DS(on), conduction loss is roughly 5.5 W. With a 1 square inch copper pour on a 2 oz FR-4 PCB the thermal resistance RθJA is approximately 50°C/W, yielding a 28°C temperature rise above 25°C ambient — well within the 175°C junction limit. For 90 A full-load operation increase copper area to at least 4 square inches or add forced airflow to keep junction rise below 100°C. Always solder the exposed drain tab; a floating tab voids the thermal path and causes rapid thermal runaway at high current.
Place a 1 µF / 100 V ceramic bypass capacitor (X7R or X7S dielectric) between gate and source as close as possible to the gate pin to suppress Miller-induced turn-on during high dv/dt switching events. Use a gate-drive resistor of 10-47 Ω to limit ringing and control rise time; values below 5 Ω risk gate-oxide ringing exceeding the ±20 V VGS absolute maximum. Keep the gate-trace short and away from the drain tab to minimize parasitic coupling — the exposed tab carries switching node voltage and can capacitively couple into a long gate trace.
Do not operate the IPD90N03S4L02ATMA1 at VGS below 4.5 V for continuous high-current loads — partial enhancement dramatically increases R_DS(on) and pushes the part into thermal runaway. For 12 V bus systems prefer VGS=10 V drive from a dedicated gate-driver IC rather than direct MCU GPIO. The exposed drain tab is electrically live; do not rely on PCB solder mask for tab-to-heatsink isolation. Always include a TVS clamp (e.g. SMBJ33CA) across the drain-source of inductive loads, even though the part is 100% avalanche tested — repeated avalanche events degrade R_DS(on) over time.
Thông tin tuân thủ
AEC-Q101 qualified (discrete semiconductor automotive standard, distinct from AEC-Q100 IC standard). MSL1 rated per JEDEC J-STD-020 up to 260°C peak reflow. Green Package (RoHS compliant) per Infineon product page.
