IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
부품 번호: IPD90N03S4L02ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.94 | $94.00 |
| 500 | $0.79 | $395.00 |
| 1,000 | $0.68 | $680.00 |
| 2,500 | $0.58 | $1,450.00 |
IPD90N03S4L02ATMA1 개요
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch that uses a gate oxide to modulate a conductive channel between source and drain. In the OptiMOS-T2 family, an N-channel trench-gate cell shrinks the R_DS(on) x area figure of merit, falling under the broader power MOSFET hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor. This places the part firmly inside Infineon's automotive-grade discrete semiconductor portfolio optimized for 12 V/24 V vehicle bus systems.
Key features include a 2.2 mΩ maximum R_DS(on) at VGS=10 V, 4.5 V to 10 V gate-drive compatibility for direct MCU/PWM control, and an operating junction range up to 175°C. The device is AEC-Q101 qualified, MSL1 rated for up to 260°C peak reflow, and shipped in a Green Package that is RoHS compliant. Per datasheet, the part is 100% avalanche tested, providing proven ruggedness for unclamped inductive switching events common in motor windings and solenoid loads.
The OptiMOS-T2 cell architecture uses a vertical trench with a split-gate structure that reduces gate charge (Qg) and Miller capacitance (Cgd) versus the prior OptiMOS generation. This lowers switching energy at high PWM frequencies (50-300 kHz), enabling smaller magnetics in synchronous buck converters and reduced dead-time loss in half-bridges. The 175°C junction rating also sustains continuous high-current operation in sealed under-hood enclosures.
Typical applications include automotive electronic power steering (EPS), brushed DC and BLDC motor drives, LED driving and headlamp load management, DC-DC synchronous buck and synchronous rectification stages, battery protection and hot-swap circuits, and industrial solenoid/relay drivers. The wide safety margin between 90 A continuous rating and typical 30-40 A application currents supports robust inrush handling.
When designing with this part, derate continuous drain current to roughly 60-70 A in a real PCB layout with limited copper pour, and verify gate-drive strength to fully enhance the channel (VGS ≥ 10 V recommended). The exposed tab on the PG-TO252-3-11 package must be soldered to a thermal pad of at least 1 sq. in. copper for full 136 W dissipation capability.
This page consolidates distributor pricing, parametric drop-in alternatives, and practical PCB-thermal design notes that go beyond the manufacturer datasheet to give automotive and industrial design engineers a faster, more confident selection workflow.
드롭인 대체품: IPD90N03S4L02ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPD90N03S4L02ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Operating Temperature Range, Technology, MSL Level, RoHS Status.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPD90N03S4L-02
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPD090N03LGATMA1
✅ 드롭인✓ 재고 있음
$0.34 / 개
데이터시트 보기 →IPD031N06L3GATMA1
✅ 드롭인✓ 재고 있음
$0.48 / 개
데이터시트 보기 →BSC014N06NSATMA1
✅ 드롭인✓ 재고 있음
$0.89 / 개
데이터시트 보기 →BSC027N04LSGATMA1
✅ 드롭인✓ 재고 있음
$0.54 / 개
데이터시트 보기 →IPT007N06NATMA1
✅ 드롭인✓ 재고 있음
$2.84 / 개
데이터시트 보기 →IPD90N03S4L02ATMA1 최대 정격 & 전기적 특성
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide), OptiMOS-T2 trench |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Tc | 90 A |
| Power Dissipation (PD) at Tc | 136 W |
| RDS(on) Max at VGS=10 V | 2.2 mΩ |
| Gate Drive Voltage (VGS) | 4.5 V to 10 V |
| 동작 접합 온도 | -55°C to +175°C |
| Avalanche Rated | 100% Avalanche tested |
| 패키지 | PG-TO252-3-11 (DPAK, surface mount) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| RoHS 상태 | Compliant (Green Package) |
| Automotive Qualification | AEC-Q101 qualified |
| Series | OptiMOS-T2 |
IPD90N03S4L02ATMA1 핀 구성
| 핀 1 | Gate — MOSFET gate drive input; 4.5 V to 10 V enhancement range |
| 핀 2 | Drain — MOSFET drain; also internally connected to the exposed tab |
| 핀 3 | Source — MOSFET source terminal |
안전 동작 영역 (DC, Tj=25°C)
일반적인 애플리케이션
IPD90N03S4L02ATMA1 적합 용도: 6 애플리케이션s: Automotive Electronic Power Steering (EPS), BLDC and Brushed DC Motor Drive, Automotive LED Headlamp and Load Driver, Synchronous Buck DC-DC Converter Low-Side Switch, Battery Protection and Hot-Swap Circuit, Industrial Solenoid and Relay Driver.
Automotive Electronic Power Steering (EPS)
The IPD90N03S4L02ATMA1 is well-suited to EPS motor drive half-bridges because its 30 V VDS safely covers 12 V automotive bus transients up to ~24 V load-dump, while the 2.2 mΩ R_DS(on) at VGS=10 V minimizes conduction loss across the 50-80 A peak motor currents seen during parking maneuvers. The AEC-Q101 qualification is mandatory for under-hood EPS ECUs, and the 100% avalanche rating provides headroom for the regenerative braking current spikes that occur when current is commutated through the body diode during PWM dead-time. The DPAK's 136 W dissipation rating, when paired with a 1 sq. in. copper pour, sustains continuous torque assist without thermal throttling. Designers typically run the part at 25 kHz PWM with VGS=10 V for fully-enhanced switching; the 4.5 V VGS rating also enables direct 5 V MCU logic drive in low-power modes.
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BLDC and Brushed DC Motor Drive
For 12 V / 24 V BLDC motor inverters and brushed DC H-bridges, the IPD90N03S4L02ATMA1's 90 A continuous rating delivers a 2-3x safety margin above typical 30-40 A motor currents, ensuring long-term reliability under locked-rotor inrush. Its 2.2 mΩ R_DS(on) at VGS=10 V keeps I²R conduction loss below 5 W at 50 A, simplifying thermal design in compact motor-control PCBs. The OptiMOS-T2 cell's low gate charge (Qg) and Miller capacitance enable 50-100 kHz PWM frequencies with reduced switching loss, which is critical for sensorless BLDC trapezoidal commutation. The 175°C junction rating also permits operation in sealed motor housings where ambient can reach 85-100°C.
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Automotive LED Headlamp and Load Driver
High-brightness LED headlamps and DRL/turn load drivers benefit from the IPD90N03S4L02ATMA1's low R_DS(on) which, at typical 5-10 A LED currents, dissipates only 0.1-0.4 W — eliminating the need for bulky heatsinks in tight headlamp housings. The 30 V VDS rating covers 12 V bus with comfortable transient headroom, and the part's 4.5 V VGS turn-on enables direct drive from 5 V logic for daytime running light PWM dimming at 200-1000 Hz. AEC-Q101 qualification, MSL1 reflow rating, and Green Package RoHS compliance meet automotive lighting module requirements. The 100% avalanche test rating provides a safety margin for the inductive transients generated by the LED wiring harness inductance during PWM edge transitions.
추천
Synchronous Buck DC-DC Converter Low-Side Switch
As the low-side synchronous rectifier in a 12 V-to-3.3 V/5 V/1.8 V buck converter, the IPD90N03S4L02ATMA1's 2.2 mΩ R_DS(on) at VGS=10 V produces 1-2% efficiency gain versus Schottky diode rectification at loads above 10 A. The low gate charge of the OptiMOS-T2 cell enables 300-500 kHz switching with minimal dead-time loss, allowing smaller inductors in compact point-of-load designs. The 30 V rating provides adequate margin above 12 V nominal bus voltage plus transients. The exposed-drain DPAK tab solders directly to a copper thermal pad that doubles as a heatsink, supporting 20-30 W continuous output without airflow.
추천
Battery Protection and Hot-Swap Circuit
In 12 V lead-acid or Li-ion battery management systems, the IPD90N03S4L02ATMA1 serves as the reverse-battery and over-current disconnect switch. Its 2.2 mΩ R_DS(on) keeps the discharge path loss under 50 mV at 25 A, well within e-fuse accuracy budgets. The 100% avalanche rating and 175°C junction limit provide robust fault handling during external short-circuit events where the MOSFET must absorb the inductive kick from upstream wiring before the fuse clears. AEC-Q101 qualification supports automotive BMS deployment. Designers typically parallel two parts for 100 A+ applications, taking advantage of the DPAK's tab-pinned drain for symmetric current sharing.
추천
Industrial Solenoid and Relay Driver
For driving 12 V/24 V solenoids, relays, and contactors in industrial automation, the IPD90N03S4L02ATMA1's 90 A ID handles inrush currents well above the steady-state holding current, while the 30 V VDS tolerates flyback voltage when the coil is de-energized (with a freewheeling diode clamp). The OptiMOS-T2 cell's fast switching enables PWM proportional solenoid control for hydraulic valves, and the AEC-Q101/extended temperature rating permits deployment in sealed factory enclosures up to 85°C ambient. The part's 100% avalanche test means it survives unclamped turn-off transients on the inductive load without an external TVS clamp, simplifying the BOM.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPD90N03S4L02ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPD90N03S4L-02 | IPD090N03LGATMA1 | IPD031N06L3GATMA1 | BSC014N06NSATMA1 | IPT007N06NATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same |
| Drain-to-Source Voltage (VDS) | 30 V | 30 V | 30 V | 60 V | 60 V | 60 V |
| Continuous Drain Current (ID @ Tc) | 90 A | 90 A | 90 A | 30 A | 30 A | 100 A |
| RDS(on) Max at VGS=10 V | 2.2 mΩ | 2.2 mΩ | ~2.0 mΩ (newer gen) | 3.1 mΩ | 1.4 mΩ | 0.75 mΩ |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| RoHS / Green Package | Yes | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Higher continuous current rating than the 60 V drop-ins (vs IPD031N06L3GATMA1)
- Proven OptiMOS-T2 cell with established AEC-Q101 supply chain (vs IPD090N03LGATMA1)
- Lower R_DS(on) per area than 60 V parts in the same package (vs BSC014N06NSATMA1)
설계 노트
Estimated: at 50 A continuous conduction with VGS=10 V and 2.2 mΩ R_DS(on), conduction loss is roughly 5.5 W. With a 1 square inch copper pour on a 2 oz FR-4 PCB the thermal resistance RθJA is approximately 50°C/W, yielding a 28°C temperature rise above 25°C ambient — well within the 175°C junction limit. For 90 A full-load operation increase copper area to at least 4 square inches or add forced airflow to keep junction rise below 100°C. Always solder the exposed drain tab; a floating tab voids the thermal path and causes rapid thermal runaway at high current.
Place a 1 µF / 100 V ceramic bypass capacitor (X7R or X7S dielectric) between gate and source as close as possible to the gate pin to suppress Miller-induced turn-on during high dv/dt switching events. Use a gate-drive resistor of 10-47 Ω to limit ringing and control rise time; values below 5 Ω risk gate-oxide ringing exceeding the ±20 V VGS absolute maximum. Keep the gate-trace short and away from the drain tab to minimize parasitic coupling — the exposed tab carries switching node voltage and can capacitively couple into a long gate trace.
Do not operate the IPD90N03S4L02ATMA1 at VGS below 4.5 V for continuous high-current loads — partial enhancement dramatically increases R_DS(on) and pushes the part into thermal runaway. For 12 V bus systems prefer VGS=10 V drive from a dedicated gate-driver IC rather than direct MCU GPIO. The exposed drain tab is electrically live; do not rely on PCB solder mask for tab-to-heatsink isolation. Always include a TVS clamp (e.g. SMBJ33CA) across the drain-source of inductive loads, even though the part is 100% avalanche tested — repeated avalanche events degrade R_DS(on) over time.
규정 준수 정보
AEC-Q101 qualified (discrete semiconductor automotive standard, distinct from AEC-Q100 IC standard). MSL1 rated per JEDEC J-STD-020 up to 260°C peak reflow. Green Package (RoHS compliant) per Infineon product page.
