IPT039N15N5ATMA1 - 150V 190A 3.9mΩ OptiMOS 5 Power MOSFET | Infineon
MPN: IPT039N15N5ATMA1 ✓ Hoạt độngIPT039N15N5ATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device (gate, drain, source) that switches or amplifies current in power-electronics circuits. Within the broader taxonomy, MOSFETs sit under discrete semiconductors → transistors → FETs → power MOSFETs, and are typically benchmarked against IGBTs (for >600 V) and GaN/SiC FETs (for very high-frequency or high-temperature use). The '5' in OptiMOS 5 denotes Infineon's fifth-generation trench process, which optimizes the figure-of-merit RDS(on)×Qg to reduce both conduction and switching losses. The TOLL package combines a Kelvin-source lead with a low-inductance, top-side cooling pad, enabling higher current density than D2PAK while keeping the board footprint compact.
Key features include a logic-level compatible threshold (4.6 V VGS(th) typical), 100% Rg- and UIS-tested avalanche ruggedness, and a junction-to-case thermal resistance compatible with PCB copper-area cooling per the datasheet reference layout. Compared with the prior OptiMOS 3 generation at 150 V, the IPT039N15N5 typically achieves ~30 % lower RDS(on) at the same die size, which directly reduces I²R losses in high-current synchronous-rectifier positions.
Typical applications include 48 V telecom and server bus converters, e-bike and e-scooter motor drives, industrial SMPS primary-side switches, and solar MPPT boost stages. In each case, the part's combination of 150 V drain rating, 190 A pulsed current, and 3.9 mΩ RDS(on) is matched to converters operating in the 20-100 kHz range where conduction loss dominates.
Designers should note the asymmetrical current rating (21 A Ta vs 190 A Tc): real-world PCB thermal design limits continuous current to a value derived from copper area on the drain tab. The exposed thermal pad must be soldered to a copper pour sized per Diagram 2 of the datasheet; otherwise thermal performance will be far below the 319 W Tc specification. The HSOF-8 footprint is footprint-compatible with industry-standard TOLL land patterns from multiple vendors, but pinout (Gate-Drain-Source-KS arrangement) must be verified against the target part.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho IPT039N15N5ATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPT039N15N5ATMA1 (cùng hình factor và footprint) — khác nhau ở Gate Threshold Voltage VGS(th) typ, Operating Temperature Range, Package.
IPT040N15N5ATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
IPB60N10S4-12ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC019N04LSTATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minhLiên hệ để biết giá
Xem tài liệu →IPT039N15N5ATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) max | 150 V |
| Gate-Source Voltage (VGS) max | 20 V |
| Continuous Drain Current (ID) at TA=25C | 21 A |
| Continuous Drain Current (ID) at TC=25C | 190 A |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mΩ |
| Gate Threshold Voltage VGS(th) typ | 4.6 V |
| Power Dissipation at TA=25C | 3.8 W |
| Power Dissipation at TC=25C | 319 W |
| Hộp | PG-HSOF-8 (TOLL) Surface Mount |
| Khoảng nhiệt độ hoạt động | -55C to +175C (junction) |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 8 (8 + exposed tab) |
| Trạng thái RoHS | Compliant |
Cấu hình chân IPT039N15N5ATMA1
| Chân 1 | G — Gate (input to gate driver) |
| Chân 2 | KS — Kelvin Source (gate-drive return, must be tied to driver GND) |
| Chân 3 | D — Drain (also exposed top tab) |
| Chân 4 | D — Drain |
| Chân 5 | D — Drain |
| Chân 6 | D — Drain |
| Chân 7 | D — Drain |
| Chân 8 | S — Source (power return path) |
| Chân TAB | D — Drain (exposed top-side thermal pad, also electrical drain) |
Khu vực hoạt động an toàn - DC (TC=25C)
Ứng dụng tiêu biểu
IPT039N15N5ATMA1 phù hợp cho 6 Áp dụngs: 48V Telecom and Server Bus Converter, E-Mobility Motor Drive and Battery Disconnect, Industrial SMPS Primary-Side Switch, Solar MPPT Boost Converter, High-Current Synchronous Rectifier, Battery Management System (BMS) Protection Switch.
48V Telecom and Server Bus Converter
The IPT039N15N5ATMA1 is engineered for 48 V telecom and hyperscale server bus converters where step-down conversion to 12 V or 5 V point-of-load rails demands both high current capability and minimal conduction loss. With 150 V VDS it tolerates 60 V transient spikes typical of telecom battery plants, while its 3.9 mΩ RDS(on) at VGS=10 V keeps synchronous-rectifier I²R loss below 1% of throughput at 100 A. The PG-HSOF-8 (TOLL) package's top-side exposed drain tab mates with direct heatsink attachment or large copper pours, enabling >95% efficiency in 600 W to 1.2 kW intermediate-bus converters that populate AI server motherboards.
Được đề xuất
E-Mobility Motor Drive and Battery Disconnect
In e-bikes, e-scooters, and light electric vehicles, the IPT039N15N5ATMA1 serves as a high-side battery disconnect or motor-phase switch where 48 V to 96 V battery packs meet 150 V-rated MOSFETs for inductive-spike margin. Its 190 A pulsed ID rating covers locked-rotor inrush currents, while the 3.9 mΩ RDS(on) minimizes voltage drop during high-torque acceleration. The OptiMOS 5 process provides low Qg for fast switching in PWM motor control at 20-50 kHz, reducing switching loss and extending battery range. The PG-HSOF-8 (TOLL) footprint supports both top-cooled heatsink designs and bottom-side PCB copper cooling for space-constrained scooter controllers.
Được đề xuất
Industrial SMPS Primary-Side Switch
Industrial switched-mode power supplies (SMPS) operating from rectified 230 VAC mains (≈325 VDC bus) traditionally use 600 V MOSFETs, but telecom-style 48 V distributed-bus SMPS use 150 V primaries where the IPT039N15N5ATMA1 excels. Its 150 V VDS provides adequate margin for the 80-120 V reflected voltage of an isolated forward or half-bridge topology running at 100 kHz, while the 3.9 mΩ RDS(on) reduces primary-side conduction loss by up to 50 % versus 5-6 mΩ parts. The PG-HSOF-8 package's top thermal pad enables direct attachment to a chassis-mounted heatsink, supporting 200-500 W industrial PSU designs with natural convection cooling.
Được đề xuất
Solar MPPT Boost Converter
Photovoltaic MPPT (Maximum Power Point Tracking) boost converters in residential and small-commercial solar inverters step up panel voltages (typically 30-80 V) to a 400 V DC-link. The IPT039N15N5ATMA1 fits the boost-switch position where its 150 V VDS tolerates open-circuit panel transients up to 100 V plus inductive ringing, and its 3.9 mΩ RDS(on) reduces conduction loss at 30-50 A continuous panel current. The OptiMOS 5 technology's low gate charge Qg enables high-frequency MPPT operation above 100 kHz, shrinking magnetics and improving tracking dynamic response. TOLL package's compact footprint is favored in space-constrained rooftop inverter designs.
Được đề xuất
High-Current Synchronous Rectifier
In 12 V and 24 V secondary-side synchronous rectification, the IPT039N15N5ATMA1 acts as the low-side rectifying MOSFET where its 150 V VDS rating is over-specified but its ultra-low 3.9 mΩ RDS(on) and 190 A ID capability deliver unmatched efficiency. Server and telecom DC-DC bricks benefit from the resulting >97 % efficiency at 60-100 A output currents, with reduced heat-sink requirements enabling higher power density. The Kelvin-source pin minimizes source-inductance effects at high di/dt, critical for paralleled-MOSFET layouts where gate-drive skew can cause circulating currents and thermal runaway.
Được đề xuất
Battery Management System (BMS) Protection Switch
Lithium-ion Battery Management Systems (BMS) use high-current MOSFETs as charge/discharge protection switches between the cell stack and the load. The IPT039N15N5ATMA1 fits 48-96 V battery packs where its 150 V VDS tolerates cell-voltage transients and its 3.9 mΩ RDS(on) keeps voltage drop below 200 mV at 50 A continuous discharge. The PG-HSOF-8 (TOLL) package enables compact BMS modules with PCB-side cooling, while the Infineon OptiMOS 5 process delivers the avalanche ruggedness required by the UL 1973 / IEC 62619 battery standards for fault-current interruption. The exposed thermal pad supports both bottom-side PCB cooling and top-side heatsink attachment for higher-power e-mobility BMS designs.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPT039N15N5ATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPT040N15N5ATMA1 | IPB60N10S4-12ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon (same-brand) | Infineon (same-brand) | Infineon (same-brand) |
| Package | PG-HSOF-8 (TOLL) | PG-HSOF-8 (TOLL) - same | PG-HSOF-8 (TOLL) - same | PG-HSOF-8 (TOLL) - same |
| VDS max | 150 V | 150 V (same) | 100 V (-33%) | 40 V (-73%) |
| RDS(on) max at VGS=10V | 3.9 mΩ | 4.0 mΩ (+2.5%) | 12 mΩ (+208%) | 1.9 mΩ (-51%) |
| Technology | OptiMOS 5 | OptiMOS 5 (same) | OptiMOS 4 | OptiMOS 5 (different VDS class) |
Bảo phân biệt quan trọng
- Ultra-low RDS(on) of 3.9 mΩ at VGS=10V in TOLL package (vsIPT040N15N5ATMA1)
- OptiMOS 5 technology node with optimized FOM (RDS(on) × Qg) (vsIPB60N10S4-12ATMA1)
- 150 V VDS rating provides avalanche headroom for 48V-96V systems (vsBSC019N04LSTATMA1)
Ghi chú thiết kế
The IPT039N15N5ATMA1 has an extreme thermal asymmetry: 3.8 W at TA=25 °C vs 319 W at TC=25 °C. Estimated: at 50 A continuous into the drain tab with no heatsink, a 1 oz 6 cm² copper pour yields approximately θJA ≈ 50 °C/W, limiting steady-state power to ~2.5 W. Above 50 A continuous load, attach the top-side drain tab to a small aluminum heatsink with thermal compound; this drops θJA to ~10 °C/W and enables 30 W dissipation. Always refer to Diagram 2 of the Infineon datasheet for the reference PCB layout (40 mm × 40 mm × 1.5 mm FR4 with 6 cm² copper for drain).
For the PG-HSOF-8 (TOLL) layout, place the gate-drive loop (gate resistor, gate-driver output, pin 1, Kelvin-source pin 2) within a 5 mm × 5 mm area to minimize parasitic inductance. The drain copper pour on the top side should cover at least the entire package footprint plus 2 mm of perimeter, with 20-25 thermal vias (0.3 mm drill, 1.0 mm pitch) stitching to inner-layer copper planes. Place input capacitors (boot-strap or bulk) within 3 mm of the drain and source pins to minimize switching-node ringing at 100 A peak currents.
Do not connect the Kelvin-source pin (pin 2) to the power-source pad (pin 8) - the Infineon datasheet requires separate gate-drive return to suppress source-inductance-induced gate-overshoot at high di/dt. Also avoid operating continuously above 100 A on a PCB without verifying the drain-tab thermal resistance; the silicon supports 190 A but the package is the limiting factor. Finally, do not parallel multiple IPT039N15N5ATMA1s without individual gate resistors (5-10 Ω) per device to prevent high-frequency oscillation between mismatched RDS(on) units.
Thông tin tuân thủ
RoHS and lead-free compliance confirmed per Infineon product page. AEC-Q100 not specified for this part; for automotive-grade 150V MOSFET in the same family, consult Infineon's automotive OptiMOS product line.
