IPT039N15N5ATMA1 - 150V 190A 3.9mΩ OptiMOS 5 Power MOSFET | Infineon
MPN: IPT039N15N5ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.95 | $7.95 |
| 10 | $7.16 | $71.60 |
| 100 | $6.05 | $605.00 |
| 500 | $5.2 | $2,600.00 |
| 1,000 | $4.42 | $4,420.00 |
IPT039N15N5ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device (gate, drain, source) that switches or amplifies current in power-electronics circuits. Within the broader taxonomy, MOSFETs sit under discrete semiconductors → transistors → FETs → power MOSFETs, and are typically benchmarked against IGBTs (for >600 V) and GaN/SiC FETs (for very high-frequency or high-temperature use). The '5' in OptiMOS 5 denotes Infineon's fifth-generation trench process, which optimizes the figure-of-merit RDS(on)×Qg to reduce both conduction and switching losses. The TOLL package combines a Kelvin-source lead with a low-inductance, top-side cooling pad, enabling higher current density than D2PAK while keeping the board footprint compact.
Key features include a logic-level compatible threshold (4.6 V VGS(th) typical), 100% Rg- and UIS-tested avalanche ruggedness, and a junction-to-case thermal resistance compatible with PCB copper-area cooling per the datasheet reference layout. Compared with the prior OptiMOS 3 generation at 150 V, the IPT039N15N5 typically achieves ~30 % lower RDS(on) at the same die size, which directly reduces I²R losses in high-current synchronous-rectifier positions.
Typical applications include 48 V telecom and server bus converters, e-bike and e-scooter motor drives, industrial SMPS primary-side switches, and solar MPPT boost stages. In each case, the part's combination of 150 V drain rating, 190 A pulsed current, and 3.9 mΩ RDS(on) is matched to converters operating in the 20-100 kHz range where conduction loss dominates.
Designers should note the asymmetrical current rating (21 A Ta vs 190 A Tc): real-world PCB thermal design limits continuous current to a value derived from copper area on the drain tab. The exposed thermal pad must be soldered to a copper pour sized per Diagram 2 of the datasheet; otherwise thermal performance will be far below the 319 W Tc specification. The HSOF-8 footprint is footprint-compatible with industry-standard TOLL land patterns from multiple vendors, but pinout (Gate-Drain-Source-KS arrangement) must be verified against the target part.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IPT039N15N5ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPT039N15N5ATMA1 (same form factor and footprint) — differing in Gate Threshold Voltage VGS(th) typ, Operating Temperature Range, Package.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPT040N15N5ATMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPB60N10S4-12ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC019N04LSTATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.21 / Unit
View Datasheet →IPT039N15N5ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) max | 150 V |
| Gate-Source Voltage (VGS) max | 20 V |
| Continuous Drain Current (ID) at TA=25C | 21 A |
| Continuous Drain Current (ID) at TC=25C | 190 A |
| On-Resistance RDS(on) max at VGS=10V | 3.9 mΩ |
| Gate Threshold Voltage VGS(th) typ | 4.6 V |
| Power Dissipation at TA=25C | 3.8 W |
| Power Dissipation at TC=25C | 319 W |
| Package | PG-HSOF-8 (TOLL) Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) |
| Mounting Type | Surface Mount |
| Pin Count | 8 (8 + exposed tab) |
| RoHS Status | Compliant |
IPT039N15N5ATMA1 Pin Configuration
| Pin 1 | G — Gate (input to gate driver) |
| Pin 2 | KS — Kelvin Source (gate-drive return, must be tied to driver GND) |
| Pin 3 | D — Drain (also exposed top tab) |
| Pin 4 | D — Drain |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | S — Source (power return path) |
| Pin TAB | D — Drain (exposed top-side thermal pad, also electrical drain) |
Safe Operating Area - DC (TC=25C)
Typical Applications
IPT039N15N5ATMA1 is suitable for 6 applications: 48V Telecom and Server Bus Converter, E-Mobility Motor Drive and Battery Disconnect, Industrial SMPS Primary-Side Switch, Solar MPPT Boost Converter, High-Current Synchronous Rectifier, Battery Management System (BMS) Protection Switch.
48V Telecom and Server Bus Converter
The IPT039N15N5ATMA1 is engineered for 48 V telecom and hyperscale server bus converters where step-down conversion to 12 V or 5 V point-of-load rails demands both high current capability and minimal conduction loss. With 150 V VDS it tolerates 60 V transient spikes typical of telecom battery plants, while its 3.9 mΩ RDS(on) at VGS=10 V keeps synchronous-rectifier I²R loss below 1% of throughput at 100 A. The PG-HSOF-8 (TOLL) package's top-side exposed drain tab mates with direct heatsink attachment or large copper pours, enabling >95% efficiency in 600 W to 1.2 kW intermediate-bus converters that populate AI server motherboards.
Recommended
E-Mobility Motor Drive and Battery Disconnect
In e-bikes, e-scooters, and light electric vehicles, the IPT039N15N5ATMA1 serves as a high-side battery disconnect or motor-phase switch where 48 V to 96 V battery packs meet 150 V-rated MOSFETs for inductive-spike margin. Its 190 A pulsed ID rating covers locked-rotor inrush currents, while the 3.9 mΩ RDS(on) minimizes voltage drop during high-torque acceleration. The OptiMOS 5 process provides low Qg for fast switching in PWM motor control at 20-50 kHz, reducing switching loss and extending battery range. The PG-HSOF-8 (TOLL) footprint supports both top-cooled heatsink designs and bottom-side PCB copper cooling for space-constrained scooter controllers.
Recommended
Industrial SMPS Primary-Side Switch
Industrial switched-mode power supplies (SMPS) operating from rectified 230 VAC mains (≈325 VDC bus) traditionally use 600 V MOSFETs, but telecom-style 48 V distributed-bus SMPS use 150 V primaries where the IPT039N15N5ATMA1 excels. Its 150 V VDS provides adequate margin for the 80-120 V reflected voltage of an isolated forward or half-bridge topology running at 100 kHz, while the 3.9 mΩ RDS(on) reduces primary-side conduction loss by up to 50 % versus 5-6 mΩ parts. The PG-HSOF-8 package's top thermal pad enables direct attachment to a chassis-mounted heatsink, supporting 200-500 W industrial PSU designs with natural convection cooling.
Recommended
Solar MPPT Boost Converter
Photovoltaic MPPT (Maximum Power Point Tracking) boost converters in residential and small-commercial solar inverters step up panel voltages (typically 30-80 V) to a 400 V DC-link. The IPT039N15N5ATMA1 fits the boost-switch position where its 150 V VDS tolerates open-circuit panel transients up to 100 V plus inductive ringing, and its 3.9 mΩ RDS(on) reduces conduction loss at 30-50 A continuous panel current. The OptiMOS 5 technology's low gate charge Qg enables high-frequency MPPT operation above 100 kHz, shrinking magnetics and improving tracking dynamic response. TOLL package's compact footprint is favored in space-constrained rooftop inverter designs.
Recommended
High-Current Synchronous Rectifier
In 12 V and 24 V secondary-side synchronous rectification, the IPT039N15N5ATMA1 acts as the low-side rectifying MOSFET where its 150 V VDS rating is over-specified but its ultra-low 3.9 mΩ RDS(on) and 190 A ID capability deliver unmatched efficiency. Server and telecom DC-DC bricks benefit from the resulting >97 % efficiency at 60-100 A output currents, with reduced heat-sink requirements enabling higher power density. The Kelvin-source pin minimizes source-inductance effects at high di/dt, critical for paralleled-MOSFET layouts where gate-drive skew can cause circulating currents and thermal runaway.
Recommended
Battery Management System (BMS) Protection Switch
Lithium-ion Battery Management Systems (BMS) use high-current MOSFETs as charge/discharge protection switches between the cell stack and the load. The IPT039N15N5ATMA1 fits 48-96 V battery packs where its 150 V VDS tolerates cell-voltage transients and its 3.9 mΩ RDS(on) keeps voltage drop below 200 mV at 50 A continuous discharge. The PG-HSOF-8 (TOLL) package enables compact BMS modules with PCB-side cooling, while the Infineon OptiMOS 5 process delivers the avalanche ruggedness required by the UL 1973 / IEC 62619 battery standards for fault-current interruption. The exposed thermal pad supports both bottom-side PCB cooling and top-side heatsink attachment for higher-power e-mobility BMS designs.
Recommended
Recommended Products Summary
Engineering reference data for IPT039N15N5ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPT040N15N5ATMA1 | IPB60N10S4-12ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon (same-brand) | Infineon (same-brand) | Infineon (same-brand) |
| Package | PG-HSOF-8 (TOLL) | PG-HSOF-8 (TOLL) - same | PG-HSOF-8 (TOLL) - same | PG-HSOF-8 (TOLL) - same |
| VDS max | 150 V | 150 V (same) | 100 V (-33%) | 40 V (-73%) |
| RDS(on) max at VGS=10V | 3.9 mΩ | 4.0 mΩ (+2.5%) | 12 mΩ (+208%) | 1.9 mΩ (-51%) |
| Technology | OptiMOS 5 | OptiMOS 5 (same) | OptiMOS 4 | OptiMOS 5 (different VDS class) |
Key Differentiators
- Ultra-low RDS(on) of 3.9 mΩ at VGS=10V in TOLL package (vs IPT040N15N5ATMA1)
- OptiMOS 5 technology node with optimized FOM (RDS(on) × Qg) (vs IPB60N10S4-12ATMA1)
- 150 V VDS rating provides avalanche headroom for 48V-96V systems (vs BSC019N04LSTATMA1)
Design Notes
The IPT039N15N5ATMA1 has an extreme thermal asymmetry: 3.8 W at TA=25 °C vs 319 W at TC=25 °C. Estimated: at 50 A continuous into the drain tab with no heatsink, a 1 oz 6 cm² copper pour yields approximately θJA ≈ 50 °C/W, limiting steady-state power to ~2.5 W. Above 50 A continuous load, attach the top-side drain tab to a small aluminum heatsink with thermal compound; this drops θJA to ~10 °C/W and enables 30 W dissipation. Always refer to Diagram 2 of the Infineon datasheet for the reference PCB layout (40 mm × 40 mm × 1.5 mm FR4 with 6 cm² copper for drain).
For the PG-HSOF-8 (TOLL) layout, place the gate-drive loop (gate resistor, gate-driver output, pin 1, Kelvin-source pin 2) within a 5 mm × 5 mm area to minimize parasitic inductance. The drain copper pour on the top side should cover at least the entire package footprint plus 2 mm of perimeter, with 20-25 thermal vias (0.3 mm drill, 1.0 mm pitch) stitching to inner-layer copper planes. Place input capacitors (boot-strap or bulk) within 3 mm of the drain and source pins to minimize switching-node ringing at 100 A peak currents.
Do not connect the Kelvin-source pin (pin 2) to the power-source pad (pin 8) - the Infineon datasheet requires separate gate-drive return to suppress source-inductance-induced gate-overshoot at high di/dt. Also avoid operating continuously above 100 A on a PCB without verifying the drain-tab thermal resistance; the silicon supports 190 A but the package is the limiting factor. Finally, do not parallel multiple IPT039N15N5ATMA1s without individual gate resistors (5-10 Ω) per device to prevent high-frequency oscillation between mismatched RDS(on) units.
Compliance Information
RoHS and lead-free compliance confirmed per Infineon product page. AEC-Q100 not specified for this part; for automotive-grade 150V MOSFET in the same family, consult Infineon's automotive OptiMOS product line.
