BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
MPN: BSC019N04LSTATMA1 ✓ Hoạt độngBSC019N04LSTATMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source. N-channel MOSFETs such as the BSC019N04LSTATMA1 are the workhorses of modern synchronous buck converters, where two MOSFETs (a control FET and a sync FET) alternate to step down a higher DC rail to a lower voltage. OptiMOS 5 is Infineon's fifth-generation 40 V trench MOSFET platform, designed to deliver the industry's lowest Figure of Merit (FOM = RDS(on) x Qg) at this voltage class for highest efficiency at high switching frequencies.
Key features include 1.9 mOhm maximum RDS(on) at VGS = 10 V, a 40 V VDS rating that provides ample margin above nominal 12 V or 24 V rails, and avalanche-rated ruggedness with a 94 W power dissipation capability (Tc). The logic-level-compatible gate threshold (typ. 1.7 V) allows direct drive from standard 3.3 V or 5 V PWM controllers, eliminating the need for a gate-driver bootstrap in some low-side topologies. The SuperSO8 footprint also offers an exposed thermal pad with theta_JA in the low-40s C/W range, enabling compact designs without a discrete heatsink at moderate loads.
Typical applications include synchronous rectification on the secondary side of isolated DC-DC bricks, point-of-load (POL) buck converters in telecom and server motherboards, hot-swap and OR-ing controllers, and low-side switches for motor-control H-bridges. At 12 V input the part can deliver tens of amps continuously with negligible conduction loss.
When designing with this device, pay close attention to gate-drive voltage and dv/dt. Although logic-level compatible, a 10 V drive maximizes RDS(on) margin; at 4.5 V the on-resistance roughly doubles. Always place the gate resistor and local bypass capacitor within 5 mm of the gate pin to suppress parasitic turn-on.
This page synthesizes distributor pricing, drop-in OptiMOS 5 and competitive alternatives, and practical layout notes not found in the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho BSC019N04LSTATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC019N04LSTATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
BSC019N04LS
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
BSC028N06NSTATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC014NE2LSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC0921NDIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →ISC015N06NM5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NTMFS4C03N
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC019N04LSTATMA1 Tỷ lệ tối đa & tính chất điện
| Technology | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 161 A |
| Continuous Drain Current (ID, Ta=25C) | 28 A |
| On-Resistance RDS(on) max @ VGS=10V | 1.9 mOhm |
| Gate Threshold Voltage VGS(th) typ | 1.7 V |
| Total Gate Charge Qg typ | 85 nC |
| Power Dissipation PD (Tc=25C) | 94 W |
| Khoảng nhiệt độ hoạt động | -55 C to +150 C |
| Hộp | TDSON-8 (SuperSO8) 5x6 mm |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 (unlimited) |
| Trạng thái RoHS | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| Avalanche Rated | Yes |
Cấu hình chân BSC019N04LSTATMA1
| Chân 1 | Source — Source terminal (connected to pins 1-3 internally) |
| Chân 2 | Source — Source terminal |
| Chân 3 | Source — Source terminal |
| Chân 4 | Gate — Gate drive input |
| Chân 5 | Drain — Drain terminal (exposed pad beneath package) |
| Chân 6 | Drain — Drain terminal (exposed pad area) |
| Chân 7 | Source — Source terminal |
| Chân 8 | Source — Source terminal |
Khu vực hoạt động an toàn (DC, Tc=25C)
Ứng dụng tiêu biểu
BSC019N04LSTATMA1 phù hợp cho 6 Áp dụngs: Synchronous Rectification in 12 V Buck Converters, Server and Telecom DC-DC Brick Converters, Hot-Swap and OR-ing Controllers, Low-Side Switch in Motor Drive H-Bridges, Battery Management and Protection FETs, USB-PD and Fast-Charge Power Stages.
Synchronous Rectification in 12 V Buck Converters
BSC019N04LSTATMA1 serves as the low-side sync FET in 12 V-to-1.x V point-of-load buck converters where its 1.9 mOhm RDS(on) at 10 V VGS minimizes conduction loss at high output currents. The 85 nC typical gate charge keeps switching loss low at 300-500 kHz, supporting > 95 % peak efficiency in 25-40 A server POL designs. Compared with a Schottky diode the MOSFET halves rectifier loss but requires careful dead-time control to prevent shoot-through. Source: Infineon OptiMOS 5 datasheet typical application circuit.
Được đề xuất
Server and Telecom DC-DC Brick Converters
In isolated 48 V-to-12 V intermediate bus converters and 12 V-to-1 V VRM stages, BSC019N04LSTATMA1 provides the low-side switch in synchronous-rectified full-bridge or hard-switched buck topologies. The 40 V VDS gives safe margin above 12 V outputs with inductive ringing, and the 161 A pulsed rating handles transient load steps typical in server CPU power delivery. The TDSON-8 footprint enables a compact 25 A/inch^2 power-density layout. Source: Infineon OptiMOS 5 product family reference designs.
Được đề xuất
Hot-Swap and OR-ing Controllers
BSC019N04LSTATMA1 is well suited as the pass element in 12 V hot-swap and OR-ing controllers where its low RDS(on) limits steady-state I^2R dissipation and its 94 W power rating absorbs inrush transients. The logic-level-compatible threshold allows direct PWM control for inrush current profiling. Use a TVS or snubber to clamp inductive transients during connector mating. Recommended for -48 V telecom distribution and 12 V server backplanes.
Được đề xuất
Low-Side Switch in Motor Drive H-Bridges
BSC019N04LSTATMA1 functions as the low-side FET in 12-24 V brushed-DC and small BLDC motor H-bridges for robotics, e-mobility, and industrial automation. Its 1.9 mOhm RDS(on) minimizes conduction loss during PWM at 20-50 kHz, and the 40 V VDS tolerates inductive flyback when paired with a flyback diode. Use the IR2104STRPBF half-bridge driver for safe gate control. Avoid continuous operation above 50 A without active cooling.
Được đề xuất
Battery Management and Protection FETs
In 4S-6S Li-ion battery packs (nominal 14.4-21.6 V), BSC019N04LSTATMA1 acts as the discharge or charge protection FET where its 40 V VDS provides margin above the fully-charged 25.2 V stack and its 1.9 mOhm RDS(on) minimizes loss during continuous 20-30 A discharge. The exposed-pad TDSON-8 enables direct PCB heatsinking for thermal management. Pair with a battery monitor such as the TLE9015 for cell balancing and overcurrent protection.
Được đề xuất
USB-PD and Fast-Charge Power Stages
BSC019N04LSTATMA1 supports the synchronous buck stage of USB Power Delivery 3.1 chargers delivering 100-140 W at 20 V output. Its 40 V VDS handles USB-PD Extended Power Range (EPR) outputs to 28 V, and 1.9 mOhm RDS(on) keeps full-load efficiency above 96 %. The TDSON-8 footprint supports compact 1-2 cu-in charger designs. Use a digital PFC + LLC front end and the BSC019N04LSTATMA1 in the secondary-side sync-rectifier position.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC019N04LSTATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC028N06NSTATMA1 | BSC0921NDIATMA1 | ISC015N06NM5ATMA1 | NTMFS4C03N |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | TDSON-8 (SuperSO8) 5x6 mm | TDSON-8 (SuperSO8) 5x6 mm - same | TDSON-8 (SuperSO8) 5x6 mm - same | TDSON-8 (SuperSO8) 5x6 mm - same | TDSON-8 (SO-8FL) 5x6 mm - same |
| Drain-Source Voltage VDS max | 40 V | 60 V | 25 V | 60 V | 40 V |
| On-Resistance RDS(on) max @ 10V | 1.9 mOhm | 2.8 mOhm | 9.2 mOhm | 1.5 mOhm | 2.0 mOhm |
| Continuous Drain Current (Tc=25C) | 161 A | 100 A | 48 A | 176 A | 140 A |
| Power Dissipation PD (Tc=25C) | 94 W | 78 W | 44 W | 104 W | 83 W |
| Gate Threshold VGS(th) typ | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.6 V |
| Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | onsemi PowerTrench |
| Approx Unit Price @ 1000 (USD, as of 2026-09-14) | $1.42 | $1.25 | $0.95 | $1.55 | $1.30 |
Bảo phân biệt quan trọng
- Industry-leading FOM at 40 V in TDSON-8 (vsBSC0921NDIATMA1)
- Higher VDS rating than 25 V Infineon alternatives (vsBSC014NE2LSIATMA1)
- Cross-brand footprint compatibility with onsemi SO-8FL parts (vsNTMFS4C03N)
Ghi chú thiết kế
Estimated: At continuous 30 A with RDS(on) = 1.9 mOhm, conduction loss is I^2 * R = 30^2 * 0.0019 = 1.71 W. The TDSON-8 with 1 oz copper on a 2-layer board has theta_JA roughly 50 C/W (per JEDEC EIA/JESD51), giving a 86 C temperature rise above ambient. At 30 C ambient the junction reaches 116 C - within the 150 C rating but with limited margin. Use 4-layer board with 2 oz copper on top side or a small heatsink pad for > 20 A continuous operation.
Place the gate-drive loop (gate resistor, gate driver output, and FET gate) within 5 mm of the gate pin to minimize parasitic inductance. The source connection (pins 1-3, 7-8) must be a continuous copper pour to the ground plane, with at least 4 vias stitching the top-side source copper to internal ground planes. The exposed drain pad (pin 5-6) needs a thermal via array (typically 9-16 vias in a 3x3 to 4x4 pattern) to spread heat into the inner copper layers.
Do not drive BSC019N04LSTATMA1 directly from a 3.3 V microcontroller GPIO. Although VGS(th) is 1.7 V, at 3.3 V VGS the RDS(on) doubles to ~3.8 mOhm, doubling conduction loss and risking thermal runaway at high current. Use a dedicated gate driver such as Infineon 1EDN71x or 2ED2106S06F that supplies 8-10 V to the gate. Also, do not exceed 40 V VDS - inductive kickback in motor/relay applications commonly spikes above 30 V and requires a TVS clamp.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product declaration. Lead-free reflow-compatible (MSL1, 245 C peak per JEDEC J-STD-020). Not AEC-Q100 qualified; for automotive designs use Infineon's automotive-grade OptiMOS part with -Q suffix.
