IPT60R050G7XTMA1 - 600V 44A 50mΩ CoolMOS G7 MOSFET | Infineon
MPN: IPT60R050G7XTMA1 ✓ Hoạt độngIPT60R050G7XTMA1 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied, and blocks voltage when off. Within the power-conversion hierarchy, MOSFETs sit inside switch-mode power supplies (SMPS) alongside the controller IC, magnetic components, and bulk capacitors. The CoolMOS G7 family is positioned as a high-performance superjunction (SJ) MOSFET line, replacing older planar 600 V parts with much lower switching and conduction losses.
Key differentiating specifications of the IPT60R050G7XTMA1 include a typical gate charge of approximately 35 nC, a low output capacitance (Eoss) optimized for soft switching, an intrinsic body diode with robust reverse-recovery behavior, and a Kelvin-source pin that decouples the gate-drive return path from the main power current. The PG-HSOF-8-2 (TOLL) package features a top-side cooling pad and a very low thermal resistance, enabling high continuous current without external heatsinking on the bottom copper.
The G7 platform improves switching loss by roughly 30% versus the previous P6 generation and reduces gate charge by ~50%, allowing higher switching frequencies (130-300 kHz) without efficiency penalty. The Kelvin-source pin eliminates the source-inductance-induced gate-oscillation problem seen in standard TO-220/TO-247 layouts, which is critical at the high di/dt of superjunction MOSFETs.
Typical applications for the IPT60R050G7XTMA1 include telecom/server SMPS, industrial welding and induction heating, solar inverters, EV on-board chargers (OBC) and DC-DC stages, and high-end PC silver-box ATX power supplies. The part is also widely used in LLC half-bridge and PFC boost stages where low Qg and low Eoss maximize efficiency at 100 kHz+ switching frequencies.
When designing with this part, ensure the PCB layout uses the Kelvin-source pin (pin 8) for the gate-driver return rather than the main power source pad, otherwise switching loss and EMI will degrade significantly. Use a TVS clamp on the gate-source path if the part is exposed to dv/dt-induced turn-on in half-bridge topologies.
This page synthesizes distributor pricing, drop-in alternatives, and practical layout notes for the IPT60R050G7XTMA1 not consolidated on a single manufacturer or distributor page.
Bộ thay thế dễ dàng lắp đặt cho IPT60R050G7XTMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPT60R050G7XTMA1 (cùng hình factor và footprint) — khác nhau ở Operating Temperature Range, Package, Technology.
IPT60R050G7XTMA2
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPT60R050G8XTMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPL60R050CFD7ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPT60R040CFD7ATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
ISZ230N10NM6ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IPT60R050G7XTMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Series | CoolMOS G7 (C7 Gold) |
| Technology | Superjunction N-Channel MOSFET |
| Polarity | N-Channel |
| Drain-Source Voltage (Vdss) | 600 V |
| Continuous Drain Current (Id) at Tc=25C | 44 A |
| Drain-Source On-Resistance (Rds(on)) max | 50 mOhm |
| Maximum Power Dissipation (Pd) at Tc=25C | 245 W |
| Hộp | PG-HSOF-8-2 (TO-Leadless / TOLL) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55C to +150C |
| Trạng thái RoHS | Compliant |
| Kelvin Source Pin | Yes (pin 8) |
Cấu hình chân IPT60R050G7XTMA1
| Chân 1 | Source — Power source (main current return) |
| Chân 2 | Source — Power source (main current return) |
| Chân 3 | Source — Power source (main current return) |
| Chân 4 | Gate — MOSFET gate drive input |
| Chân 5 | Drain — Power drain (also thermal pad) |
| Chân 6 | Drain — Power drain |
| Chân 7 | Drain — Power drain |
| Chân 8 | Kelvin Source — Gate-driver return (Kelvin connection) |
Forward-Bias Khu vực hoạt động an toàn (SOA)
Ứng dụng tiêu biểu
IPT60R050G7XTMA1 phù hợp cho 6 Áp dụngs: Telecom / Server SMPS (PFC + LLC), Industrial Welding & Induction Heating, Solar String Inverters, EV On-Board Charger (OBC) PFC Stage, PC ATX Silver-Box PSU, Industrial LED Lighting Drivers.
Telecom / Server SMPS (PFC + LLC)
The IPT60R050G7XTMA1 fits high-density telecom rectifier and server SMPS designs where 600 V Vds and 44 A continuous Id cover the full-bridge primary and PFC boost stages. Its 50 mΩ Rds(on) at full gate drive keeps conduction loss under 1% of output power at 3 kW, while the G7 platform's reduced Qg (~50% versus P6) lowers gate-drive losses at 100-200 kHz switching. The PG-HSOF-8-2 package with Kelvin source and top thermal pad enables >30 W/inch³ power density without a bottom heatsink.
Được đề xuất
Industrial Welding & Induction Heating
Industrial welding and induction-heating inverters run at high switching frequencies (50-200 kHz) and demand robust 600 V MOSFETs that survive high di/dt and reverse-recovery stress. The IPT60R050G7XTMA1's superjunction structure, low Eoss, and rugged body diode support hard-switched ZVS and hard-switched ZCS topologies with junction temperatures up to 150C. The TOLL package's top-side cooling pad mounts directly to an aluminum baseplate, removing the need for an isolated thermal interface material in IGBT-replacement designs.
Được đề xuất
Solar String Inverters
Residential and small-commercial string inverters use the IPT60R050G7XTMA1 in the high-frequency side of the DC-DC and DC-AC stages. Its 600 V Vds rating covers the 400-450 V DC-bus of 230 V AC-output systems, while 44 A continuous supports 5-10 kW designs. The Kelvin-source connection and G7 figure-of-merit improvements yield 80+ Titanium-grade efficiency, and the TOLL package is compatible with standard Infineon reference designs for solar inverters as documented in the CoolMOS G7 application notes.
Được đề xuất
EV On-Board Charger (OBC) PFC Stage
EV on-board chargers with 3.3-22 kW ratings use a CCM or totem-pole PFC front end operating from 230 V or 400 V AC. The IPT60R050G7XTMA1's 600 V rating, 44 A continuous, and low Qrr make it suitable for bridgeless totem-pole PFC, where reverse recovery of the slow leg is critical. The PG-HSOF-8-2 footprint supports compact liquid-cooled or forced-air-cooled OBC modules that target 96%+ peak efficiency per the GB/T and IEC 61851 standards.
Được đề xuất
PC ATX Silver-Box PSU
High-wattage (1200-2000 W) ATX power supplies use the IPT60R050G7XTMA1 in the interleaved CCM PFC stage and the half-bridge LLC primary. Its 600 V Vds easily handles the 400 V DC bus, while 44 A Id supports 1500 W+ continuous output with the 80+ Titanium efficiency target. CoolMOS G7's reduced Eoss allows LLC operation at 100-200 kHz, shrinking the resonant inductor and transformer by 30-40% versus P6 designs and enabling higher power density.
Được đề xuất
Industrial LED Lighting Drivers
High-bay and stadium LED drivers in the 600-1500 W class use the IPT60R050G7XTMA1 in two-stage PFC + LLC architectures where its 600 V Vds, 44 A Id, and 50 mΩ Rds(on) suit 1-3 kW designs with 277-480 V AC inputs. The low thermal resistance of the TOLL package simplifies the heatsink design, while the Kelvin-source pin reduces EMI by 6-10 dB versus standard TO-220 packages — a critical benefit for stage and studio fixtures where conducted EMI must meet EN 55015 class B.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPT60R050G7XTMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPT60R050G7XTMA2 | IPT60R050G8XTMA1 | IPL60R050CFD7ATMA1 | IPT60R040CFD7ATMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) |
| Vdss (V) | 600 | 600 | 600 | 600 | 600 | 100 |
| Technology | CoolMOS G7 | CoolMOS G7 | CoolMOS G8 | CoolMOS CFD7 | CoolMOS CFD7 | OptiMOS 6 (100V) |
| Integrated Body Diode | Standard (no CFD) | Standard | Standard | Fast body diode (CFD) | Fast body diode (CFD) | Standard |
Bảo phân biệt quan trọng
- CoolMOS G7 platform delivers best-in-class FOM (vsPrevious-generation P6 CoolMOS)
- PG-HSOF-8-2 (TOLL) package with dedicated Kelvin-source pin (vsTO-220/TO-247 through-hole CoolMOS G7)
- 44 A continuous drain current in TOLL footprint (vsIPL60R185P7 (TOLL, 185 mΩ))
Ghi chú thiết kế
Critical: connect the gate-driver return (turn-off path) to the Kelvin-source pin (pin 8), NOT to the main power source pads (pins 1-3). Using main source for the gate return introduces source inductance (Ls) which generates a voltage spike during turn-off that opposes the gate drive, slowing switching by 30-50% and increasing ringing. The Kelvin path eliminates Ls-induced gate oscillation and reduces EMI by 6-10 dB on Vds edges at 10+ V/ns.
The PG-HSOF-8-2 (TOLL) package has a top-side thermal pad for top-side cooling. Place a continuous copper pour (recommended >=2 oz, >=1 cm²) on the top layer directly above the package, connected to a heatsink via thermal interface material. The bottom-side drain pad should also have a thermal via array (8-12 vias, 0.3 mm drill, 0.6 mm pitch) to bottom-layer copper for additional spreading. Combined top+bottom cooling allows continuous 44 A operation at Tc=100C without external airflow.
In half-bridge topologies (LLC, full-bridge), the IPT60R050G7XTMA1 may experience dv/dt-induced turn-on of the low-side MOSFET during the high-side turn-on transition. Add a 10-22 kΩ gate-source resistor (Rgs) close to the gate pin to bleed off the Miller-coupling-induced charge, and place a TVS diode (5.1-6.8 V) gate-to-Kelvin-source if Rgs alone is insufficient. Without Rgs, shoot-through currents can exceed 10 A and cause catastrophic failure of both devices.
Minimize the gate-loop loop area (gate driver -> gate pin -> Kelvin source pin -> gate-driver GND) to less than 5 mm² to prevent gate ringing and false turn-on. Use a 4-layer PCB with a dedicated gate-driver return plane layer between the power layer and the gate-driver layer. Place the bootstrap capacitor for the high-side driver (if used) directly adjacent to the gate-driver IC with the shortest possible trace length.
Thông tin tuân thủ
IPT60R050G7XTMA1 is the industrial (non-automotive) grade. For AEC-Q101 automotive qualification, refer to the IPD60R050G7 family in different packages. RoHS and REACH compliance per Infineon product page.
