IPT60R050G7XTMA1 - 600V 44A 50mΩ CoolMOS G7 MOSFET | Infineon
MPN: IPT60R050G7XTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $3.05 | $30.50 |
| 100 | $2.42 | $242.00 |
| 500 | $2.08 | $1,040.00 |
| 1,000 | $1.78 | $1,780.00 |
| 2,000 | $1.62 | $3,240.00 |
IPT60R050G7XTMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied, and blocks voltage when off. Within the power-conversion hierarchy, MOSFETs sit inside switch-mode power supplies (SMPS) alongside the controller IC, magnetic components, and bulk capacitors. The CoolMOS G7 family is positioned as a high-performance superjunction (SJ) MOSFET line, replacing older planar 600 V parts with much lower switching and conduction losses.
Key differentiating specifications of the IPT60R050G7XTMA1 include a typical gate charge of approximately 35 nC, a low output capacitance (Eoss) optimized for soft switching, an intrinsic body diode with robust reverse-recovery behavior, and a Kelvin-source pin that decouples the gate-drive return path from the main power current. The PG-HSOF-8-2 (TOLL) package features a top-side cooling pad and a very low thermal resistance, enabling high continuous current without external heatsinking on the bottom copper.
The G7 platform improves switching loss by roughly 30% versus the previous P6 generation and reduces gate charge by ~50%, allowing higher switching frequencies (130-300 kHz) without efficiency penalty. The Kelvin-source pin eliminates the source-inductance-induced gate-oscillation problem seen in standard TO-220/TO-247 layouts, which is critical at the high di/dt of superjunction MOSFETs.
Typical applications for the IPT60R050G7XTMA1 include telecom/server SMPS, industrial welding and induction heating, solar inverters, EV on-board chargers (OBC) and DC-DC stages, and high-end PC silver-box ATX power supplies. The part is also widely used in LLC half-bridge and PFC boost stages where low Qg and low Eoss maximize efficiency at 100 kHz+ switching frequencies.
When designing with this part, ensure the PCB layout uses the Kelvin-source pin (pin 8) for the gate-driver return rather than the main power source pad, otherwise switching loss and EMI will degrade significantly. Use a TVS clamp on the gate-source path if the part is exposed to dv/dt-induced turn-on in half-bridge topologies.
This page synthesizes distributor pricing, drop-in alternatives, and practical layout notes for the IPT60R050G7XTMA1 not consolidated on a single manufacturer or distributor page.
Drop-in alternatives for IPT60R050G7XTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPT60R050G7XTMA1 (same form factor and footprint) — differing in Operating Temperature Range, Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPT60R050G7XTMA2
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IPT60R050G8XTMA1
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IPL60R050CFD7ATMA1
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IPT60R040CFD7ATMA1
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ISZ230N10NM6ATMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →IPT60R050G7XTMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS G7 (C7 Gold) |
| Technology | Superjunction N-Channel MOSFET |
| Polarity | N-Channel |
| Drain-Source Voltage (Vdss) | 600 V |
| Continuous Drain Current (Id) at Tc=25C | 44 A |
| Drain-Source On-Resistance (Rds(on)) max | 50 mOhm |
| Maximum Power Dissipation (Pd) at Tc=25C | 245 W |
| Package | PG-HSOF-8-2 (TO-Leadless / TOLL) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C |
| RoHS Status | Compliant |
| Kelvin Source Pin | Yes (pin 8) |
IPT60R050G7XTMA1 Pin Configuration
| Pin 1 | Source — Power source (main current return) |
| Pin 2 | Source — Power source (main current return) |
| Pin 3 | Source — Power source (main current return) |
| Pin 4 | Gate — MOSFET gate drive input |
| Pin 5 | Drain — Power drain (also thermal pad) |
| Pin 6 | Drain — Power drain |
| Pin 7 | Drain — Power drain |
| Pin 8 | Kelvin Source — Gate-driver return (Kelvin connection) |
Forward-Bias Safe Operating Area (SOA)
Typical Applications
IPT60R050G7XTMA1 is suitable for 6 applications: Telecom / Server SMPS (PFC + LLC), Industrial Welding & Induction Heating, Solar String Inverters, EV On-Board Charger (OBC) PFC Stage, PC ATX Silver-Box PSU, Industrial LED Lighting Drivers.
Telecom / Server SMPS (PFC + LLC)
The IPT60R050G7XTMA1 fits high-density telecom rectifier and server SMPS designs where 600 V Vds and 44 A continuous Id cover the full-bridge primary and PFC boost stages. Its 50 mΩ Rds(on) at full gate drive keeps conduction loss under 1% of output power at 3 kW, while the G7 platform's reduced Qg (~50% versus P6) lowers gate-drive losses at 100-200 kHz switching. The PG-HSOF-8-2 package with Kelvin source and top thermal pad enables >30 W/inch³ power density without a bottom heatsink.
Recommended
Industrial Welding & Induction Heating
Industrial welding and induction-heating inverters run at high switching frequencies (50-200 kHz) and demand robust 600 V MOSFETs that survive high di/dt and reverse-recovery stress. The IPT60R050G7XTMA1's superjunction structure, low Eoss, and rugged body diode support hard-switched ZVS and hard-switched ZCS topologies with junction temperatures up to 150C. The TOLL package's top-side cooling pad mounts directly to an aluminum baseplate, removing the need for an isolated thermal interface material in IGBT-replacement designs.
Recommended
Solar String Inverters
Residential and small-commercial string inverters use the IPT60R050G7XTMA1 in the high-frequency side of the DC-DC and DC-AC stages. Its 600 V Vds rating covers the 400-450 V DC-bus of 230 V AC-output systems, while 44 A continuous supports 5-10 kW designs. The Kelvin-source connection and G7 figure-of-merit improvements yield 80+ Titanium-grade efficiency, and the TOLL package is compatible with standard Infineon reference designs for solar inverters as documented in the CoolMOS G7 application notes.
Recommended
EV On-Board Charger (OBC) PFC Stage
EV on-board chargers with 3.3-22 kW ratings use a CCM or totem-pole PFC front end operating from 230 V or 400 V AC. The IPT60R050G7XTMA1's 600 V rating, 44 A continuous, and low Qrr make it suitable for bridgeless totem-pole PFC, where reverse recovery of the slow leg is critical. The PG-HSOF-8-2 footprint supports compact liquid-cooled or forced-air-cooled OBC modules that target 96%+ peak efficiency per the GB/T and IEC 61851 standards.
Recommended
PC ATX Silver-Box PSU
High-wattage (1200-2000 W) ATX power supplies use the IPT60R050G7XTMA1 in the interleaved CCM PFC stage and the half-bridge LLC primary. Its 600 V Vds easily handles the 400 V DC bus, while 44 A Id supports 1500 W+ continuous output with the 80+ Titanium efficiency target. CoolMOS G7's reduced Eoss allows LLC operation at 100-200 kHz, shrinking the resonant inductor and transformer by 30-40% versus P6 designs and enabling higher power density.
Recommended
Industrial LED Lighting Drivers
High-bay and stadium LED drivers in the 600-1500 W class use the IPT60R050G7XTMA1 in two-stage PFC + LLC architectures where its 600 V Vds, 44 A Id, and 50 mΩ Rds(on) suit 1-3 kW designs with 277-480 V AC inputs. The low thermal resistance of the TOLL package simplifies the heatsink design, while the Kelvin-source pin reduces EMI by 6-10 dB versus standard TO-220 packages — a critical benefit for stage and studio fixtures where conducted EMI must meet EN 55015 class B.
Recommended
Recommended Products Summary
Engineering reference data for IPT60R050G7XTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPT60R050G7XTMA2 | IPT60R050G8XTMA1 | IPL60R050CFD7ATMA1 | IPT60R040CFD7ATMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) | PG-HSOF-8-2 (TOLL) |
| Vdss (V) | 600 | 600 | 600 | 600 | 600 | 100 |
| Technology | CoolMOS G7 | CoolMOS G7 | CoolMOS G8 | CoolMOS CFD7 | CoolMOS CFD7 | OptiMOS 6 (100V) |
| Integrated Body Diode | Standard (no CFD) | Standard | Standard | Fast body diode (CFD) | Fast body diode (CFD) | Standard |
Key Differentiators
- CoolMOS G7 platform delivers best-in-class FOM (vs Previous-generation P6 CoolMOS)
- PG-HSOF-8-2 (TOLL) package with dedicated Kelvin-source pin (vs TO-220/TO-247 through-hole CoolMOS G7)
- 44 A continuous drain current in TOLL footprint (vs IPL60R185P7 (TOLL, 185 mΩ))
Design Notes
Critical: connect the gate-driver return (turn-off path) to the Kelvin-source pin (pin 8), NOT to the main power source pads (pins 1-3). Using main source for the gate return introduces source inductance (Ls) which generates a voltage spike during turn-off that opposes the gate drive, slowing switching by 30-50% and increasing ringing. The Kelvin path eliminates Ls-induced gate oscillation and reduces EMI by 6-10 dB on Vds edges at 10+ V/ns.
The PG-HSOF-8-2 (TOLL) package has a top-side thermal pad for top-side cooling. Place a continuous copper pour (recommended >=2 oz, >=1 cm²) on the top layer directly above the package, connected to a heatsink via thermal interface material. The bottom-side drain pad should also have a thermal via array (8-12 vias, 0.3 mm drill, 0.6 mm pitch) to bottom-layer copper for additional spreading. Combined top+bottom cooling allows continuous 44 A operation at Tc=100C without external airflow.
In half-bridge topologies (LLC, full-bridge), the IPT60R050G7XTMA1 may experience dv/dt-induced turn-on of the low-side MOSFET during the high-side turn-on transition. Add a 10-22 kΩ gate-source resistor (Rgs) close to the gate pin to bleed off the Miller-coupling-induced charge, and place a TVS diode (5.1-6.8 V) gate-to-Kelvin-source if Rgs alone is insufficient. Without Rgs, shoot-through currents can exceed 10 A and cause catastrophic failure of both devices.
Minimize the gate-loop loop area (gate driver -> gate pin -> Kelvin source pin -> gate-driver GND) to less than 5 mm² to prevent gate ringing and false turn-on. Use a 4-layer PCB with a dedicated gate-driver return plane layer between the power layer and the gate-driver layer. Place the bootstrap capacitor for the high-side driver (if used) directly adjacent to the gate-driver IC with the shortest possible trace length.
Compliance Information
IPT60R050G7XTMA1 is the industrial (non-automotive) grade. For AEC-Q101 automotive qualification, refer to the IPD60R050G7 family in different packages. RoHS and REACH compliance per Infineon product page.
