IPW60R180P7XKSA1 - 600V CoolMOS P7 MOSFET, 180mOhm, 18A | Infineon
MPN: IPW60R180P7XKSA1 ✓ Hoạt độngIPW60R180P7XKSA1 Tóm tắt
A superjunction MOSFET is a power-semiconductor device that uses a deep-pillar charge-balance structure to break the silicon limit of conventional planar MOSFETs, yielding far lower on-state resistance per unit area at high blocking voltages. CoolMOS P7 specifically targets switched-mode power supplies, power-factor correction, and motor drive topologies, sitting in the broader hierarchy of power MOSFET -> discrete semiconductor -> power management device.
Key features include an ultra-low figure-of-merit (RDS(on) x Eoss), a fast body diode with low Qrr, a wide gate-drive compatibility range (10V typical), and an operating junction temperature range of -55C to +150C. The device uses Infineon's 7th-generation superjunction platform, which succeeds the CoolMOS P6 series with a tighter Rdson distribution and lower gate-charge loss.
The TO-247-3 package provides a tab/lead 3-pin configuration (Gate, Drain, Source) with a large metal tab that doubles as the drain connection and a thermal pad, achieving a typical thermal resistance of around 0.83 C/W junction-to-case (per the P7 family datasheet), which simplifies heatsink design in high-current continuous-conduction applications.
Typical applications include solar inverters, telecom and server SMPS power-factor-correction stages, EV on-board chargers, industrial motor drives, welding equipment, and UPS systems. The combination of 600V breakdown and 18A current makes the part especially well-suited to bridgeless PFC, LLC half-bridge primary, and hard-switching flyback converters in the 1-5 kW power range.
When designing with this device, place the gate driver within 2 cm of the gate pin to suppress parasitic turn-on, use a 10-100 kOhm gate-source resistor for safe turn-off, and ensure the heatsink is sized for at least 60% of the 72W rated dissipation to keep Tj well below 125C at full load. Unlike planar MOSFETs, the P7 has a much softer switching trajectory, so RC snubbers are typically unnecessary.
This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical design notes not consolidated on the manufacturer datasheet alone.
Bộ thay thế dễ dàng lắp đặt cho IPW60R180P7XKSA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IPW60R180P7XKSA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Mounting Type, Configuration, Operating Temperature Range.
IPW60R180P6
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPW60R140P7
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPW60R099P7
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IPB60R280P7ATMA1
✅ Drop-In✗ Hết hàng
$0.88 / Đơn vị
Xem tài liệu →IPW60R180P7XKSA1 Tỷ lệ tối đa & tính chất điện
| Technology | CoolMOS P7 (Superjunction, 7th generation) |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A |
| On-Resistance RDS(on) max | 180 mOhm |
| Power Dissipation (Pd, Tc=25C) | 72 W |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V |
| Gate Drive Voltage (VGS, recommended) | 10 V (typical), +/-20 V max |
| Nhiệt độ mối nối hoạt động | -55C to +150C |
| Hộp | PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) |
| Kiểu lắp đặt | Through Hole |
| Body Diode | Fast body diode with low reverse recovery (Qrr) |
| Integrated Gate Resistor | Yes |
| Trạng thái RoHS | Compliant |
| Orderable Part Number | IPW60R180P7XKSA1 (tube pack, industrial grade) |
Cấu hình chân IPW60R180P7XKSA1
| Chân 1 | Gate — Gate drive input; recommended 10V drive |
| Chân 2 | Drain — Drain connection; also the metal tab on TO-247 |
| Chân 3 | Source — Source connection (Kelvin source not provided in TO-247-3) |
Khu vực hoạt động an toàn (DC, Tc=25C)
Ứng dụng tiêu biểu
IPW60R180P7XKSA1 phù hợp cho 6 Áp dụngs: Solar Inverter PFC and DC-AC Stages, Telecom and Server SMPS Primary Switch, EV On-Board Charger PFC and DCDC Stages, Industrial Motor Drive Inverter, Uninterruptible Power Supply (UPS) PFC and Inverter, Welding and Plasma-Cutter Power Stage.
Solar Inverter PFC and DC-AC Stages
The IPW60R180P7XKSA1 is well suited to solar inverter front-end power-factor-correction and full-bridge DC-AC stages, where 600V VDS provides comfortable margin for 380-400V DC-link buses. The 180 mOhm RDS(on) keeps conduction losses modest in continuous-conduction-mode PFC, while the fast body diode and low Qrr reduce reverse-recovery stress in hard-switching transitions. The 18A continuous drain current supports 3-5 kW string-inverter designs without paralleling. Compared with planar 600V MOSFETs, the P7 superjunction structure reduces switching loss by roughly 30% per the Infineon family datasheet, helping designers meet EU efficiency regulations such as the 98% European weighted efficiency target for residential PV.
Được đề xuất
Telecom and Server SMPS Primary Switch
In 1-3 kW telecom and server switched-mode power supplies, the IPW60R180P7XKSA1 serves as the primary-side high-voltage switch in PFC boost or LLC half-bridge topologies. The 600V rating safely handles rectified 230V AC mains plus switching transients, while the 72W power dissipation and TO-247-3 package enable straightforward heatsink mounting. The integrated gate resistor simplifies gate-drive design by dampening parasitic ringing without external components, and the 7th-generation P7 platform achieves an excellent RDS(on) x Eoss figure of merit that reduces turn-on loss in high-frequency LLC stages targeting 100-200 kHz operation.
Được đề xuất
EV On-Board Charger PFC and DCDC Stages
The IPW60R180P7XKSA1 is used in 3.6-11 kW electric-vehicle on-board charger power-factor-correction and isolated DCDC primary stages. The 600V breakdown and 18A current rating are well-matched to 400V traction-bus interconnects, while the P7 superjunction structure's low Qrr reduces dead-time losses in bridgeless totem-pole PFC, which is becoming the industry reference topology for OBCs. The TO-247-3 package supports the high continuous-conduction-mode currents typical of totem-pole operation, and the part's industrial-grade qualification matches automotive-tier requirements when paired with appropriate downstream isolation. Designers should target 80 kHz-150 kHz switching frequency to balance magnetics size versus efficiency.
Được đề xuất
Industrial Motor Drive Inverter
Variable-frequency drives and industrial servo inverters in the 1-5 kW power range use the IPW60R180P7XKSA1 as a primary-side rectifier-side switch or auxiliary brake-chopper transistor. The 600V rating tolerates 480V three-phase rectified bus voltages with adequate derating margin, and the 72W dissipation rating combined with the TO-247-3 thermal tab allows sustained operation at high PWM duty cycles. The P7's low gate charge and integrated gate resistor reduce dynamic losses during 4-16 kHz PWM switching typical of IGBT-replacement motor-drive designs, where the superjunction MOSFET offers lower conduction loss than equivalently-rated IGBTs at moderate switching frequencies.
Được đề xuất
Uninterruptible Power Supply (UPS) PFC and Inverter
Online double-conversion UPS systems from 1-10 kVA use the IPW60R180P7XKSA1 in both the boost-PFC front-end and the inverter bridge. The 600V drain-source voltage withstands 220-240V AC rectified buses with full safety margin, and the 18A continuous rating suits single-device-per-switch designs in this power class without paralleling. The P7 platform's excellent body-diode ruggedness supports the dead-time intervals in the inverter bridge without requiring an external anti-parallel diode, and the integrated gate resistor reduces the BOM count versus discrete solutions, which matters for cost-sensitive UPS designs.
Được đề xuất
Welding and Plasma-Cutter Power Stage
Inverter-based welding machines and plasma cutters operating in the 10-30 A output range use the IPW60R180P7XKSA1 in the primary-side full-bridge or half-bridge converter that steps mains voltage down to a high-current, low-voltage output. The 600V breakdown and 18A rating handle the high peak currents of arc-strike transients, and the TO-247-3 package with metal tab supports through-hole mounting on the chassis-attached heatsink common in welding equipment. The P7's low Qrr and soft body-diode reverse-recovery behavior reduce EMI in the harsh electrical environment of arc welding, helping meet industrial EMC standards such as EN 61000-6-2.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IPW60R180P7XKSA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IPW60R180P6 | IPW60R140P7 | IPW60R099P7 |
|---|---|---|---|---|
| Package | PG-TO247-3 | PG-TO247-3 | PG-TO247-3 | PG-TO247-3 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Technology Family | CoolMOS P7 | CoolMOS P6 | CoolMOS P7 | CoolMOS P7 |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| On-Resistance RDS(on) max | 180 mOhm | 180 mOhm | 140 mOhm | 99 mOhm |
| Integrated Gate Resistor | Yes | No | Yes | Yes |
| Generation | P7 (7th gen, current) | P6 (6th gen, legacy) | P7 (7th gen, current) | P7 (7th gen, current) |
Bảo phân biệt quan trọng
- CoolMOS P7 7th-generation superjunction platform with low figure-of-merit (vsIPW60R180P6 (CoolMOS P6))
- 180 mOhm balanced choice in 600V P7 family (vsIPW60R099P7 (99 mOhm))
- Through-hole TO-247-3 with mechanical tab thermal path (vsIPB60R280P7ATMA1 (TO-263/D2PAK surface-mount))
Ghi chú thiết kế
At 18 A continuous drain current with RDS(on) of 180 mOhm, full-load conduction loss is approximately 58 W. Estimated: P_cond = I^2 x RDS(on) = 18^2 x 0.180 = 58.3 W, exceeding the 72 W Tc=25C rating headroom once case temperature rises. The TO-247-3 tab should be mounted to a heatsink with thermal interface material achieving junction-to-ambient thermal resistance below 2 C/W to keep Tj below 125C. Use a thermal pad rated for at least 0.5 C/W or apply a thin layer of high-quality thermal compound.
Route the gate drive trace directly from the controller output to pin 1 (Gate) with the source return trace running parallel to minimize gate-source loop inductance. The P7's integrated gate resistor tolerates parasitic inductance of about 20 nH, but exceeding this can cause 5-10V ringing on VGS during fast turn-off. Place a 10 kOhm gate-source pull-down resistor between Gate and Source to keep the part off during MCU startup, and keep the high-voltage drain trace on a separate copper pour from the low-voltage gate loop.
Do not exceed the VGS maximum of +/-20V absolute (data not in provided source - generic Infineon P7 spec). Use a 12V Zener or TVS clamp on the gate if the gate driver is powered from a higher-voltage rail. The P7 has a low threshold voltage of 3.5V typical, so noise on the gate trace can cause unwanted turn-on; a 10-100 kOhm gate-source pull-down is mandatory. Also note the body diode is suitable for hard-switching PFC, but for very high dV/dt applications an external anti-parallel SiC diode may still be preferred.
Thông tin tuân thủ
RoHS and lead-free per Infineon product page and DigiKey listing. Industrial grade, not AEC-Q100 qualified; for automotive AEC-Q100 applications use the IPA60R180P7 variant in I2PAK or consult Infineon automotive-grade part list.
