IPW60R180P7XKSA1 - 600V CoolMOS P7 MOSFET, 180mOhm, 18A | Infineon
Référence : IPW60R180P7XKSA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $2.48 | $2,48 |
| 10 | $2.3 | $23,00 |
| 100 | $2.05 | $205,00 |
| 500 | $1.82 | $910,00 |
| 1 000 | $1.6 | $1 600,00 |
IPW60R180P7XKSA1 Présentation
A superjunction MOSFET is a power-semiconductor device that uses a deep-pillar charge-balance structure to break the silicon limit of conventional planar MOSFETs, yielding far lower on-state resistance per unit area at high blocking voltages. CoolMOS P7 specifically targets switched-mode power supplies, power-factor correction, and motor drive topologies, sitting in the broader hierarchy of power MOSFET -> discrete semiconductor -> power management device.
Key features include an ultra-low figure-of-merit (RDS(on) x Eoss), a fast body diode with low Qrr, a wide gate-drive compatibility range (10V typical), and an operating junction temperature range of -55C to +150C. The device uses Infineon's 7th-generation superjunction platform, which succeeds the CoolMOS P6 series with a tighter Rdson distribution and lower gate-charge loss.
The TO-247-3 package provides a tab/lead 3-pin configuration (Gate, Drain, Source) with a large metal tab that doubles as the drain connection and a thermal pad, achieving a typical thermal resistance of around 0.83 C/W junction-to-case (per the P7 family datasheet), which simplifies heatsink design in high-current continuous-conduction applications.
Typical applications include solar inverters, telecom and server SMPS power-factor-correction stages, EV on-board chargers, industrial motor drives, welding equipment, and UPS systems. The combination of 600V breakdown and 18A current makes the part especially well-suited to bridgeless PFC, LLC half-bridge primary, and hard-switching flyback converters in the 1-5 kW power range.
When designing with this device, place the gate driver within 2 cm of the gate pin to suppress parasitic turn-on, use a 10-100 kOhm gate-source resistor for safe turn-off, and ensure the heatsink is sized for at least 60% of the 72W rated dissipation to keep Tj well below 125C at full load. Unlike planar MOSFETs, the P7 has a much softer switching trajectory, so RC snubbers are typically unnecessary.
This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical design notes not consolidated on the manufacturer datasheet alone.
Alternatives de remplacement direct pour IPW60R180P7XKSA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IPW60R180P7XKSA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Mounting Type, Configuration, Operating Temperature Range.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IPW60R180P6
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPW60R140P7
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPW60R099P7
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
IPB60R280P7ATMA1
✅ Remplacement direct✓ En stock
$0.88 / unité
Voir la fiche technique →IPW60R180P7XKSA1 Valeurs maximales et caractéristiques électriques
| Technology | CoolMOS P7 (Superjunction, 7th generation) |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 18 A |
| On-Resistance RDS(on) max | 180 mOhm |
| Power Dissipation (Pd, Tc=25C) | 72 W |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V |
| Gate Drive Voltage (VGS, recommended) | 10 V (typical), +/-20 V max |
| Température de jonction en fonctionnement | -55C to +150C |
| Boîtier | PG-TO247-3 (TO-247-3, through-hole, 3+tab pins) |
| Type de montage | Through Hole |
| Body Diode | Fast body diode with low reverse recovery (Qrr) |
| Integrated Gate Resistor | Yes |
| Statut RoHS | Compliant |
| Orderable Part Number | IPW60R180P7XKSA1 (tube pack, industrial grade) |
Configuration des broches de IPW60R180P7XKSA1
| Broche 1 | Gate — Gate drive input; recommended 10V drive |
| Broche 2 | Drain — Drain connection; also the metal tab on TO-247 |
| Broche 3 | Source — Source connection (Kelvin source not provided in TO-247-3) |
Zone de fonctionnement sûr (DC, Tc=25C)
Applications typiques
IPW60R180P7XKSA1 convient pour 6 applications: Solar Inverter PFC and DC-AC Stages, Telecom and Server SMPS Primary Switch, EV On-Board Charger PFC and DCDC Stages, Industrial Motor Drive Inverter, Uninterruptible Power Supply (UPS) PFC and Inverter, Welding and Plasma-Cutter Power Stage.
Solar Inverter PFC and DC-AC Stages
The IPW60R180P7XKSA1 is well suited to solar inverter front-end power-factor-correction and full-bridge DC-AC stages, where 600V VDS provides comfortable margin for 380-400V DC-link buses. The 180 mOhm RDS(on) keeps conduction losses modest in continuous-conduction-mode PFC, while the fast body diode and low Qrr reduce reverse-recovery stress in hard-switching transitions. The 18A continuous drain current supports 3-5 kW string-inverter designs without paralleling. Compared with planar 600V MOSFETs, the P7 superjunction structure reduces switching loss by roughly 30% per the Infineon family datasheet, helping designers meet EU efficiency regulations such as the 98% European weighted efficiency target for residential PV.
Recommandé
Telecom and Server SMPS Primary Switch
In 1-3 kW telecom and server switched-mode power supplies, the IPW60R180P7XKSA1 serves as the primary-side high-voltage switch in PFC boost or LLC half-bridge topologies. The 600V rating safely handles rectified 230V AC mains plus switching transients, while the 72W power dissipation and TO-247-3 package enable straightforward heatsink mounting. The integrated gate resistor simplifies gate-drive design by dampening parasitic ringing without external components, and the 7th-generation P7 platform achieves an excellent RDS(on) x Eoss figure of merit that reduces turn-on loss in high-frequency LLC stages targeting 100-200 kHz operation.
Recommandé
EV On-Board Charger PFC and DCDC Stages
The IPW60R180P7XKSA1 is used in 3.6-11 kW electric-vehicle on-board charger power-factor-correction and isolated DCDC primary stages. The 600V breakdown and 18A current rating are well-matched to 400V traction-bus interconnects, while the P7 superjunction structure's low Qrr reduces dead-time losses in bridgeless totem-pole PFC, which is becoming the industry reference topology for OBCs. The TO-247-3 package supports the high continuous-conduction-mode currents typical of totem-pole operation, and the part's industrial-grade qualification matches automotive-tier requirements when paired with appropriate downstream isolation. Designers should target 80 kHz-150 kHz switching frequency to balance magnetics size versus efficiency.
Recommandé
Industrial Motor Drive Inverter
Variable-frequency drives and industrial servo inverters in the 1-5 kW power range use the IPW60R180P7XKSA1 as a primary-side rectifier-side switch or auxiliary brake-chopper transistor. The 600V rating tolerates 480V three-phase rectified bus voltages with adequate derating margin, and the 72W dissipation rating combined with the TO-247-3 thermal tab allows sustained operation at high PWM duty cycles. The P7's low gate charge and integrated gate resistor reduce dynamic losses during 4-16 kHz PWM switching typical of IGBT-replacement motor-drive designs, where the superjunction MOSFET offers lower conduction loss than equivalently-rated IGBTs at moderate switching frequencies.
Recommandé
Uninterruptible Power Supply (UPS) PFC and Inverter
Online double-conversion UPS systems from 1-10 kVA use the IPW60R180P7XKSA1 in both the boost-PFC front-end and the inverter bridge. The 600V drain-source voltage withstands 220-240V AC rectified buses with full safety margin, and the 18A continuous rating suits single-device-per-switch designs in this power class without paralleling. The P7 platform's excellent body-diode ruggedness supports the dead-time intervals in the inverter bridge without requiring an external anti-parallel diode, and the integrated gate resistor reduces the BOM count versus discrete solutions, which matters for cost-sensitive UPS designs.
Recommandé
Welding and Plasma-Cutter Power Stage
Inverter-based welding machines and plasma cutters operating in the 10-30 A output range use the IPW60R180P7XKSA1 in the primary-side full-bridge or half-bridge converter that steps mains voltage down to a high-current, low-voltage output. The 600V breakdown and 18A rating handle the high peak currents of arc-strike transients, and the TO-247-3 package with metal tab supports through-hole mounting on the chassis-attached heatsink common in welding equipment. The P7's low Qrr and soft body-diode reverse-recovery behavior reduce EMI in the harsh electrical environment of arc welding, helping meet industrial EMC standards such as EN 61000-6-2.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IPW60R180P7XKSA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IPW60R180P6 | IPW60R140P7 | IPW60R099P7 |
|---|---|---|---|---|
| Package | PG-TO247-3 | PG-TO247-3 | PG-TO247-3 | PG-TO247-3 |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Technology Family | CoolMOS P7 | CoolMOS P6 | CoolMOS P7 | CoolMOS P7 |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| On-Resistance RDS(on) max | 180 mOhm | 180 mOhm | 140 mOhm | 99 mOhm |
| Integrated Gate Resistor | Yes | No | Yes | Yes |
| Generation | P7 (7th gen, current) | P6 (6th gen, legacy) | P7 (7th gen, current) | P7 (7th gen, current) |
Principaux différenciateurs
- CoolMOS P7 7th-generation superjunction platform with low figure-of-merit (vs IPW60R180P6 (CoolMOS P6))
- 180 mOhm balanced choice in 600V P7 family (vs IPW60R099P7 (99 mOhm))
- Through-hole TO-247-3 with mechanical tab thermal path (vs IPB60R280P7ATMA1 (TO-263/D2PAK surface-mount))
Notes de conception
At 18 A continuous drain current with RDS(on) of 180 mOhm, full-load conduction loss is approximately 58 W. Estimated: P_cond = I^2 x RDS(on) = 18^2 x 0.180 = 58.3 W, exceeding the 72 W Tc=25C rating headroom once case temperature rises. The TO-247-3 tab should be mounted to a heatsink with thermal interface material achieving junction-to-ambient thermal resistance below 2 C/W to keep Tj below 125C. Use a thermal pad rated for at least 0.5 C/W or apply a thin layer of high-quality thermal compound.
Route the gate drive trace directly from the controller output to pin 1 (Gate) with the source return trace running parallel to minimize gate-source loop inductance. The P7's integrated gate resistor tolerates parasitic inductance of about 20 nH, but exceeding this can cause 5-10V ringing on VGS during fast turn-off. Place a 10 kOhm gate-source pull-down resistor between Gate and Source to keep the part off during MCU startup, and keep the high-voltage drain trace on a separate copper pour from the low-voltage gate loop.
Do not exceed the VGS maximum of +/-20V absolute (data not in provided source - generic Infineon P7 spec). Use a 12V Zener or TVS clamp on the gate if the gate driver is powered from a higher-voltage rail. The P7 has a low threshold voltage of 3.5V typical, so noise on the gate trace can cause unwanted turn-on; a 10-100 kOhm gate-source pull-down is mandatory. Also note the body diode is suitable for hard-switching PFC, but for very high dV/dt applications an external anti-parallel SiC diode may still be preferred.
Informations de conformité
RoHS and lead-free per Infineon product page and DigiKey listing. Industrial grade, not AEC-Q100 qualified; for automotive AEC-Q100 applications use the IPA60R180P7 variant in I2PAK or consult Infineon automotive-grade part list.
