IRF7342TRPBF - 55V Dual P-Channel HEXFET MOSFET Array | Infineon
MPN: IRF7342TRPBF ✓ Hoạt độngIRF7342TRPBF Tóm tắt
Key specifications include a drain-to-source on-resistance (RDS(on)) of approximately 0.105 ohm at VGS=-10V, a gate threshold voltage around -1V to -3V, and a continuous drain current of -3.4A at 25C. The device is rated for avalanche operation, features an intrinsic body diode, and supports logic-level gate drive at -10V VGS. Its SO-8 package footprint is industry standard for dual MOSFET arrays, enabling direct footprint compatibility with many competing -55V dual P-channel MOSFETs. As a P-channel MOSFET array, the IRF7342TRPBF belongs to the field-effect transistor (FET) family, which is a subclass of discrete power semiconductors. Within power management topologies, dual P-channel arrays are commonly used as high-side switches or load switches on the low side of the positive rail, paired with complementary N-channel or P-channel drivers in synchronous and half-bridge applications.
Typical applications include battery management load switching in portable electronics, full-bridge and half-bridge motor driver outputs, DC-DC converter high-side switches, power-rail OR-ing circuits, and USB power switching. The -55V rating provides substantial headroom for 12V and 24V bus protection, while the 3.4A continuous current rating handles moderate-load switching in industrial and consumer products. When designing with this part, note that P-channel high-side switching simplifies the gate drive (no bootstrap or charge pump required) at the cost of RDS(on) versus an equivalent N-channel, so thermal performance at full load should be verified against the SO-8 theta_JA of approximately 62.5 C/W on a 1 oz. copper pour.
Bộ thay thế dễ dàng lắp đặt cho IRF7342TRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRF7342TRPBF (cùng hình factor và footprint) — khác nhau ở Technology, Package, Manufacturer, Operating Temperature Range, Configuration.
IRF7343TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRF7313TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRF7342PBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRF7205TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRF9952TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR9024NTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRF7342TRPBF Tỷ lệ tối đa & tính chất điện
| Part Number | IRF7342TRPBF |
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Technology | HEXFET Power MOSFET (Fifth Generation), P-Channel |
| Configuration | Dual P-Channel MOSFET Array (two independent P-FETs in one package) |
| Drain-Source Voltage (Vds) | -55 V |
| Continuous Drain Current (Id) | -3.4 A at 25 C |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -3.0 V (typ -1.7 V) |
| Drain-Source On-Resistance (RDS(on)) | 0.105 ohm max at VGS = -10 V |
| Maximum Power Dissumption (Pd) | 2 W |
| Khoảng nhiệt độ hoạt động | -55 C to +150 C (Tj) |
| Hộp | 8-SOIC (SO-8), surface mount |
| Kiểu lắp đặt | Surface Mount |
| Packaging | Tape and Reel (TR) |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free, RoHS compliant) |
| Channel Type | P-Channel (enhancement mode) |
| Number of Channels | 2 (dual array) |
Cấu hình chân IRF7342TRPBF
| Chân 1 | S1 — Source of P-channel MOSFET 1 |
| Chân 2 | G1 — Gate of P-channel MOSFET 1 |
| Chân 3 | D1 — Drain of P-channel MOSFET 1 |
| Chân 4 | S2 — Source of P-channel MOSFET 2 |
| Chân 5 | NC — Not connected (per datasheet) internally tied to source |
| Chân 6 | D2 — Drain of P-channel MOSFET 2 |
| Chân 7 | G2 — Gate of P-channel MOSFET 2 |
| Chân 8 | S2 — Source of P-channel MOSFET 2 |
IRF7342 Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
IRF7342TRPBF phù hợp cho 7 Áp dụngs: Battery Load Switch in Portable Electronics, Half-Bridge Motor Driver Output Stage, DC-DC Converter High-Side Switch, Power-Rail OR-ing and Redundancy Switching, USB and Power Distribution Switch, Automotive 12V/24V Load Switching, Industrial Solenoid and Relay Driver.
Battery Load Switch in Portable Electronics
The IRF7342TRPBF fits portable-electronics battery load switching because its P-channel configuration requires no charge pump or bootstrap to drive the gate from a single low-voltage rail. With -55V Vds and -3.4A continuous Id per channel, the device handles USB-C VBUS switching up to 20V and discrete battery rails up to 24V. The 0.105 ohm RDS(on) at VGS=-10V keeps conduction loss under 0.5W per channel at 2A, and the SO-8 footprint leaves room for a TVS and current-sense resistor on a compact PCB.
Được đề xuất
Half-Bridge Motor Driver Output Stage
The IRF7342TRPBF suits half-bridge and full-bridge DC motor driver outputs because each P-channel MOSFET can serve as a high-side switch on the lower-voltage side of a bridge, simplifying gate drive versus an N-channel bootstrap. At -3.4A continuous and -55V Vds, the part drives small brushed DC motors in robotics, automotive accessories, and consumer appliances. Two devices in parallel deliver a full H-bridge of four switches in a 4-SO-8 footprint area, useful for cost-sensitive designs under 5A per leg.
Được đề xuất
DC-DC Converter High-Side Switch
The IRF7342TRPBF works as a P-channel high-side switch in buck and buck-boost converters up to 24V input, where its -55V Vds rating gives 30V of transient headroom above typical 24V industrial bus spikes. The 0.105 ohm RDS(on) at -10V VGS supports 3A continuous load current in synchronous-rectifier-style topologies with a complementary N-channel low-side FET. The dual-channel SO-8 package enables two-phase or two-rail conversion on a single footprint.
Được đề xuất
Power-Rail OR-ing and Redundancy Switching
The IRF7342TRPBF is well suited to OR-ing two power sources - such as a primary supply and a battery backup - by placing each P-channel MOSFET in series with one rail and using a comparator or ideal-diode controller to drive the gates. The -55V Vds tolerates the absolute maximum of any 24V redundant bus, and the low RDS(on) minimizes voltage drop in the conducting path. The dual SO-8 array holds two complete OR-ing channels in one footprint, doubling channel density for server and telecom line cards.
Được đề xuất
USB and Power Distribution Switch
The IRF7342TRPBF functions as a discrete USB power-distribution switch, replacing integrated load switches where higher current or wider voltage is needed. With -55V Vds, the device survives hot-plug transients on industrial USB and 24V-powered hubs; the 3.4A continuous rating covers USB-PD 5V/3A and 12V/2A profiles with margin. The SO-8 footprint fits the standard Type-C connector footprint area, leaving room for current-sense and OVP protection circuitry.
Được đề xuất
Automotive 12V/24V Load Switching
The IRF7342TRPBF handles 12V and 24V automotive load switching for lighting, solenoid, and accessory drivers. The -55V Vds rating tolerates load-dump transients up to 35V when paired with a TVS clamp, while the 3.4A continuous current drives most body-control loads. The dual SO-8 array supports two independent loads per package, ideal for door-module and seat-control ECUs where PCB area is constrained.
Được đề xuất
Industrial Solenoid and Relay Driver
The IRF7342TRPBF drives 24V industrial solenoids and relays as a discrete high-side switch with -55V transient tolerance. The -3.4A continuous rating covers most 24V coil currents under 2A continuous plus inrush; an external TVS diode across the drain-source clamps the inductive kickback. Two channels per package double the driver density in PLC output modules and process-control I/O cards.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRF7342TRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRF7343TRPBF | IRF7313TRPBF | IRF7342PBF | IRF7205TRPBF | IRF9952TRPBF | IRFR9024NTRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| Drain-Source Voltage (Vds) | -55 V | -55 V | -55 V | -55 V | -30 V | 30 V (N-channel) | -55 V |
| Continuous Drain Current (Id) | -3.4 A | -4.3 A | -2.5 A | -3.4 A | -4.6 A | 3.3 A (N-channel) | -8.8 A (single FET) |
| RDS(on) at VGS=-10V | 0.105 ohm | 0.065 ohm (lower) | 0.18 ohm (higher) | 0.105 ohm | 0.070 ohm | 0.10 ohm (N-channel at +10V) | 0.28 ohm (single FET) |
| Channel Configuration | Dual P-channel | Dual P-channel | Dual P-channel | Dual P-channel | Dual P-channel | Dual N-channel | Single P-channel |
| Maximum Power Dissipation | 2 W | 2 W | 2 W | 2 W | 2 W | 2 W | 2.5 W |
| Lead-Free / RoHS | Yes (PBF) | Yes (PBF) | Yes | Yes (PBF) | Yes | Yes | Yes (PBF) |
| Generation / Process | HEXFET Gen V | HEXFET Gen V | HEXFET Gen IV (earlier) | HEXFET Gen V | HEXFET Gen V | HEXFET Gen III | HEXFET Gen IV |
Bảo phân biệt quan trọng
- Fifth Generation HEXFET with low RDS(on) for the -55V P-channel class (vsIRF7313TRPBF)
- Dual independent P-channel channels in one SO-8 footprint (vsIRFR9024NTRPBF)
- Full -55V Vds rating for 24V industrial bus margin (vsIRF7205TRPBF)
- Logic-level P-channel drive at VGS=-10V compatible with standard gate drivers (vsIRF9952TRPBF (N-channel variant))
Ghi chú thiết kế
Estimated: at full -3.4A load per channel (1.2W per channel, 2.4W total at -55V bus with 0V VDS conduction drop), the SO-8 theta_JA of 62.5 C/W on minimum copper yields a 150C junction temperature rise. Use a 1 square inch copper pour per drain pad to drop theta_JA to approximately 50 C/W and keep Tj below 125C at 25C ambient. Both channels must share thermal vias under the central source pad for even heat spreading.
Layout for SO-8 dual MOSFET arrays: place input/output bulk capacitors within 5 mm of each drain pad, keep gate traces short (<5 mm) and routed away from drain transitions to limit dV/dt-induced turn-on, and stitch multiple thermal vias under the central source pad. A ground plane on layer 2 directly under the SO-8 body reduces radiated EMI during switching edges.
Do not exceed -20V VGS (absolute maximum). Use a gate-source Zener or TVS of 16V working voltage when the gate is driven from an inductive source or in half-bridge circuits. Body-diode reverse recovery of the P-channel can be significant in synchronous-rectifier use; for hard-switching topologies above 100 kHz, validate switching losses in the SOA chart against the IRF7342 datasheet curves before committing to the design.
Place the two gate-drive resistors (one per channel, typically 10-100 ohm) as close to the gate pins as possible to dampen gate-oscillation. For switching frequencies above 200 kHz, add a small RC snubber (10-100 ohm + 1 nF) across each drain-source to control ringing from parasitic inductance, especially when driving inductive loads like solenoids or motors.
Thông tin tuân thủ
Lead-free PBF suffix per Infineon material declaration. RoHS and REACH SVHC compliance per Infineon product page. Not AEC-Q100 qualified - use AEC-Q100 qualified Infineon parts for automotive designs requiring that certification.
