IRFL024ZTRPBF - 55V N-Channel HEXFET MOSFET | Infineon
MPN: IRFL024ZTRPBF ✓ Hoạt độngIRFL024ZTRPBF Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to drive loads, regulate current, or perform synchronous rectification in power electronics. The IRFL024ZTRPBF sits in the N-channel enhancement-mode category, which is the most common topology for low-side switching, DC-DC conversion, and motor control because N-channel carriers offer lower on-resistance per unit silicon area than P-channel equivalents. Within the broader taxonomy, this part belongs to: discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> N-channel enhancement-mode MOSFET.
Key features include a continuous drain current of 5.1 A at 25 C case temperature, a pulsed drain current rating higher than the continuous rating for transient load handling, and a 1 W power dissipation figure in the SOT-223 package. The HEXFET process reduces cell pitch and optimizes gate charge, achieving a 9.1 nC total gate charge that minimizes driver losses at high switching frequencies. The SOT-223 surface-mount package exposes the drain tab for direct PCB heatsinking, enabling usable current well above the bare SOT-23-class parts.
Architecturally, the device uses a planar HEXFET cell structure with a vertical DMOS current path. The 57.5 mOhm Rds(on) at 10 V Vgs translates into roughly 290 mW of conduction loss at 2.3 A continuous drain current, allowing efficient low-side switch operation without elaborate thermal management at moderate loads. The SOT-223 thermal pad attaches directly to PCB copper, providing a low thermal resistance path for heat removal.
Typical applications include low-side switching in DC-DC converters, relay and solenoid drivers, motor speed control, load switching in automotive body modules, battery protection circuits, and LED driver stages. The 55 V drain-source rating provides ample margin for 12 V and 24 V bus systems where inductive transients can approach several tens of volts.
When designing with this part, ensure the gate is driven to at least 10 V for full enhancement and use a gate resistor to control ringing. The exposed drain tab must be soldered to a copper pour sized to limit the junction-to-ambient thermal rise. Verify SOA at the target DC and pulsed operating points.
This page synthesizes distributor pricing, verified drop-in alternatives, and practical PCB design guidance that complements the Infineon datasheet with engineering context for sourcing and design decisions.
Bộ thay thế dễ dàng lắp đặt cho IRFL024ZTRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRFL024ZTRPBF (cùng hình factor và footprint) — khác nhau ở Technology, FET Type, Package, RoHS Status, Lead-Free.
IRFL024ZPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLL2705TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NTR4101PT1G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
VBJ1638
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NTR4503NT1G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFL024ZTRPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A |
| Rds(on) Max at Vgs=10V | 57.5 mOhm |
| Gate Charge (Qg) Typ | 9.1 nC |
| Power Dissipation (Pd) at Ta=25C | 1 W |
| Khoảng nhiệt độ hoạt động | -55C to +150C |
| Hộp | SOT-223 |
| Kiểu lắp đặt | Surface Mount |
| Số chân | 3 (+ drain tab) |
| Cấp MSL | 1 |
| Trạng thái RoHS | Compliant |
| Lead-Free | Yes |
Cấu hình chân IRFL024ZTRPBF
| Chân 1 | Gate — MOSFET gate control input (drive to 10V for full enhancement) |
| Chân 2 | Drain — MOSFET drain (internally connected to rear tab) |
| Chân 3 | Source — MOSFET source (typically connected to ground for low-side switch) |
| Chân 4 | Drain (Tab) — Drain terminal on rear tab; provides thermal path to PCB copper |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IRFL024ZTRPBF phù hợp cho 6 Áp dụngs: Low-Side Switching in DC-DC Converters, Automotive Relay and Solenoid Drivers, Battery Protection and Load Switching, LED Driver and Lighting Control, Industrial Motor Speed Control, Hot-Swap and Inrush Current Limiting.
Low-Side Switching in DC-DC Converters
The IRFL024ZTRPBF serves as a low-side switch in buck converters for 12 V/24 V distributed power systems, where its 55 V Vds rating and 57.5 mOhm Rds(on) minimize conduction loss. At 3 A continuous load, the device dissipates roughly 0.5 W, manageable with a 200 mm^2 copper pour on the drain tab. Compared to smaller SOT-23 MOSFETs, the SOT-223 package provides significantly better thermal performance for sustained current. The 9.1 nC Qg keeps driver losses low at switching frequencies up to 250 kHz, making it well-matched to point-of-load regulators and synchronous rectifier secondary-side switches. Use a 10 ohm gate resistor to control ringing and a Schottky freewheeling diode across inductive loads for clean switching.
Được đề xuất
Automotive Relay and Solenoid Drivers
The IRFL024ZTRPBF is widely used as a low-side driver for automotive relays, solenoids, and small motors where 12 V bus transients can reach 40 V under load-dump conditions. The 55 V Vds rating provides comfortable margin above worst-case transients, and the 5.1 A continuous drain current handles typical relay coil currents of 0.5-2 A. The SOT-223 drain tab solders directly to chassis-grounded copper for heat removal, supporting continuous operation at moderate duty cycles. Compared to DPAK alternatives, the smaller SOT-223 footprint enables more compact body control module designs. A flyback diode across inductive loads is mandatory; the IRFL024ZTRPBF's avalanche rating must be verified against the inductive kick energy.
Được đề xuất
Battery Protection and Load Switching
In battery management systems for portable and backup-power applications, the IRFL024ZTRPBF functions as a reverse-polarity and over-current protection switch. Its 55 V rating covers 4S-12S lithium battery packs, and its low Rds(on) of 57.5 mOhm minimizes voltage drop during high-current discharge, preserving battery runtime. The SOT-223 package supports the thermal load from continuous 2-3 A discharge currents, with the drain tab providing a low-thermal-resistance path to PCB copper. Compared to P-channel alternatives, this N-channel part requires a gate-driver supply above Vbatt, but it offers lower Rds(on) per unit cost.
Được đề xuất
LED Driver and Lighting Control
The IRFL024ZTRPBF drives high-brightness LED strings in architectural, automotive, and industrial lighting where PWM dimming requires a fast-switching low-side element. Its 9.1 nC gate charge supports PWM frequencies above 20 kHz without audible noise, while the 55 V Vds rating accommodates 24 V LED strings. At 1 A LED current, the device dissipates only 57 mW, eliminating the need for a heatsink. The SOT-223 footprint is well-suited to compact driver PCBs. Compared to dedicated LED driver ICs, this discrete MOSFET offers lower cost in multi-channel designs and allows the system MCU to control dimming and color mixing directly.
Được đề xuất
Industrial Motor Speed Control
The IRFL024ZTRPBF operates as a low-side chopper in small DC motor speed controllers for industrial automation, where PWM switching at 1-25 kHz regulates motor torque and speed. The 57.5 mOhm Rds(on) at Vgs=10V keeps conduction losses below 1 W at 3 A continuous motor current, and the SOT-223 thermal pad handles sustained PWM duty cycles at moderate power. The 55 V Vds rating supports 24 V and 36 V industrial bus systems. Compared to IGBT alternatives, the MOSFET's faster switching speed reduces switching losses and EMI. A flyback diode across the motor terminals is required to suppress back-EMF.
Được đề xuất
Hot-Swap and Inrush Current Limiting
In 12 V/24 V hot-swap controller circuits, the IRFL024ZTRPBF acts as the main pass element that limits inrush current when a PCB is inserted into a live backplane. Its 55 V Vds rating covers 24 V telecom and industrial systems, while the 5.1 A continuous drain current supports standard load profiles. The SOT-223 package with drain tab provides adequate heat sinking for sustained operation at 2-3 A. Designers typically add a gate resistor and soft-start network to control the turn-on dV/dt, reducing connector arcing. Compared to dedicated hot-swap ICs with integrated charge pumps, this discrete approach offers lower cost and flexibility in fault-response tuning.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRFL024ZTRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRFL024ZPBF | IRLL2705TRPBF | NTR4101PT1G | VBJ1638 | NTR4503NT1G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | VB-Mall (Chinese brand) | onsemi |
| Package | SOT-223 | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-223 - same |
| Drain-Source Voltage (Vds) | 55 V | 55 V | 55 V | 55 V | 60 V | 30 V |
| Technology | HEXFET (IR MOSFET) | HEXFET | HEXFET | Trench MOSFET | Trench MOSFET | Trench MOSFET |
Bảo phân biệt quan trọng
- 55V Vds rating with 57.5 mOhm Rds(on) in compact SOT-223 (vsNTR4101PT1G)
- HEXFET advanced process technology (vsVBJ1638)
- Same-brand Infineon family with automotive pedigree (vsIRFR024NTRPBF)
Ghi chú thiết kế
The SOT-223 drain tab is the primary thermal path. At 5.1 A continuous drain current and 57.5 mOhm Rds(on), the worst-case conduction loss is roughly 1.5 W, which exceeds the 1 W package rating at 25 C ambient. Solder the drain tab to a copper pour of at least 200 mm^2 on a 1 oz outer layer to keep junction temperature rise below 50 C. Without adequate copper, derate continuous current to approximately 2-3 A. For high-current applications, consider DPAK alternatives like IRFR024NTRPBF which offer lower thermal resistance at the cost of larger footprint.
Use a 10 ohm gate resistor to dampen parasitic ringing between the gate-source capacitance and the gate-driver trace inductance. Place the gate resistor as close to the IC gate pin as possible. Add a 100 kohm pull-down resistor from gate to source to ensure the MOSFET stays off when the driver is in high-impedance state (e.g., during MCU reset). The source pin should be connected directly to the ground plane with a short, wide trace to minimize source-inductance-induced gate voltage bounce.
Do not exceed the absolute maximum Vds of 55 V; inductive kickback from relay coils, solenoids, or motors can easily exceed 80 V without a flyback diode. Always include a flyback (freewheeling) diode rated for at least the load current, with adequate reverse-voltage margin. Verify the avalanche energy rating of the IRFL024ZTRPBF against your worst-case inductive kick - if exceeded, the device may fail short. Additionally, ensure the gate is driven to at least 10 V (not 3.3 V or 5 V logic levels) for full enhancement and lowest Rds(on).
Thông tin tuân thủ
RoHS compliant per Infineon product page. Lead-free (Pb-free) reflow-compatible. Not explicitly AEC-Q100 qualified - check with Infineon for automotive-grade equivalents in the IRFR024N series.
