IRLL2705TRPBF - 55V N-Channel HEXFET MOSFET | Infineon
MPN: IRLL2705TRPBF ✓ Hoạt độngIRLL2705TRPBF Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently switch or amplify electrical signals in power conversion circuits. Within the broader semiconductor taxonomy, MOSFETs fall under discrete semiconductors -> transistors -> FETs -> power MOSFETs, and serve as the primary switching element in DC-DC converters, motor drivers, load switches, and battery protection circuits. The IRLL2705TRPBF belongs to Infineon's HEXFET family, which uses advanced process technology to minimize RDS(on) per unit silicon area.
Key specifications include a maximum drain-to-source voltage of 55 V, continuous drain current of 3.8 A at 25 deg C ambient, peak pulsed current up to 5.2 A, ultra-low RDS(on) of 40 mOhm at VGS=10 V, and a total gate charge of 32 nC. The logic-level gate drive allows direct interfacing with 5 V microcontrollers and 3.3 V logic without requiring a gate driver stage, simplifying circuit design and reducing BOM cost.
The HEXFET fifth-generation architecture combines advanced processing techniques with a ruggedized device design, achieving extremely low on-resistance per silicon area while maintaining fast switching speed. Built-in dynamic dv/dt rating improves reliability in switching-mode power supply circuits, and the device supports ease of paralleling for higher current applications. The SOT-223 package offers a balance between compact size and thermal dissipation, with a center tab that can be soldered to the PCB copper pour for improved heat spreading.
Typical applications for the IRLL2705TRPBF include DC-DC buck and boost converters, low-voltage motor control circuits, battery protection and load switching in portable electronics, LED drivers, and relay/solenoid replacement circuits. The logic-level gate drive makes it particularly attractive for direct microcontroller control in IoT and battery-powered designs where auxiliary gate-driver ICs would be undesirable.
When designing with this part, ensure the gate-source voltage remains within the rated VGS limits and that adequate thermal management is provided through PCB copper area. The SOT-223 center tab should be soldered to a sufficient copper pour for heat dissipation. Compared to a DPAK-packaged alternative, the SOT-223 footprint saves board space but offers lower continuous current capability.
This page synthesizes distributor pricing, SOT-223 drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing actionable information for both component selection and PCB layout planning.
Bộ thay thế dễ dàng lắp đặt cho IRLL2705TRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRLL2705TRPBF (cùng hình factor và footprint) — khác nhau ở Technology, FET Type, Package, MSL Level, Operating Temperature Range.
IRLL2705PBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLL024NTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLL2705TRPBF-VB
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
NTR4101PT1G
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSL215CH6327XTSA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLL2705TRPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET fifth generation) |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at 25 deg C | 3.8 A |
| Peak Drain Current (IDM, pulsed) | 5.2 A |
| RDS(on) max at VGS=10V | 40 mOhm |
| Total Gate Charge (Qg) | 32 nC |
| Gate Drive Level | Logic-Level |
| Power Dissipation at TA=25 deg C | 1 W (Ta), 2.1 W (per LCSC listing) |
| Khoảng nhiệt độ hoạt động | -55 deg C to +175 deg C |
| Kiểu lắp đặt | Surface Mount |
| Hộp | SOT-223 |
| Dynamic dv/dt Rating | Yes |
| Lead-Free | Yes (PBF suffix) |
| Trạng thái RoHS | Compliant |
Cấu hình chân IRLL2705TRPBF
| Chân 1 | Gate — Logic-level gate input; VGS(th) approx 1-2 V, full turn-on at 4-10 V |
| Chân 2 | Source — Source terminal, connected to system ground in low-side switching |
| Chân 3 | Drain — Drain terminal, switched load connection |
| Chân 4 | Drain (Tab) — Center thermal tab, internally connected to Drain; solder to PCB copper pour for heat dissipation |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IRLL2705TRPBF phù hợp cho 6 Áp dụngs: Low-Voltage DC-DC Buck Converter, Battery Protection Load Switch, DC Motor Driver (H-Bridge Low-Side), LED Driver PWM Dimming Switch, USB and Power Rail Load Switch, Relay and Solenoid Replacement Circuit.
Low-Voltage DC-DC Buck Converter
The IRLL2705TRPBF is well suited as a low-side switch in 12 V to 5 V/3.3 V synchronous and asynchronous buck converters. With 55 V VDS rating and 40 mOhm RDS(on), it provides ample voltage headroom for 24 V industrial bus inputs while keeping conduction losses low. The 32 nC total gate charge and logic-level drive allow direct PWM control from a microcontroller or low-side gate driver, eliminating a high-side bootstrap in non-synchronous topologies. In a typical 1-2 A buck design the part dissipates 80-160 mW, comfortably within the 1 W SOT-223 rating when 1 oz copper thermal relief is provided on the drain tab.
Được đề xuất
Battery Protection Load Switch
The IRLL2705TRPBF serves as a low-side load switch in single-cell Li-ion and multi-cell battery management systems where 3.8 A continuous current handling and 55 V blocking rating are required. Logic-level gate drive enables direct control from common battery management ICs without external gate drivers. The HEXFET fifth-generation ruggedized design tolerates repetitive avalanche events that occur when switching inductive battery loads. The SOT-223 package allows compact PCB layouts in portable devices, and its center thermal tab can be soldered to the ground copper pour for effective heat dissipation during transient high-current events.
Được đề xuất
DC Motor Driver (H-Bridge Low-Side)
In low-power brushed DC motor and solenoid driver circuits, the IRLL2705TRPBF operates as a low-side switch in H-bridge configurations for 12 V and 24 V actuators. The 55 V VDS rating provides protection against back-EMF transients generated when the motor inductance collapses. Logic-level gate drive allows direct interface with 3.3 V or 5 V microcontrollers used in robotics, appliances, and automotive accessories. With 40 mOhm RDS(on) and 3.8 A continuous rating, the part drives small DC motors up to approximately 30 W without active cooling, while the SOT-223 package handles the resulting thermal load with proper copper pours.
Được đề xuất
LED Driver PWM Dimming Switch
The IRLL2705TRPBF is ideal for PWM-controlled LED driver low-side switches in architectural, automotive interior, and signage lighting applications. Logic-level gate drive enables direct connection to a microcontroller PWM output running at 1 kHz or higher, supporting smooth dimming without flicker. With 3.8 A continuous current and 40 mOhm RDS(on), it efficiently drives LED strings up to approximately 1.5 A without significant thermal stress. The 55 V VDS rating allows use in 24 V and 48 V LED bus architectures, and the SOT-223 footprint is small enough for compact linear-style LED drivers embedded in strip lighting.
Được đề xuất
USB and Power Rail Load Switch
In USB Type-C downstream-facing ports, hot-swap controllers, and OR-ing power path switches, the IRLL2705TRPBF provides logic-level controlled power switching. The 55 V VDS rating handles 20 V USB-PD voltage levels with significant derating, while 3.8 A continuous current supports standard USB-PD 5 A sourcing modes. Low RDS(on) minimizes voltage drop in the power path, and the fast switching capability enables quick fault response when combined with a current-sense amplifier. The SOT-223 package is small enough for inline placement on Type-C connector breakouts.
Được đề xuất
Relay and Solenoid Replacement Circuit
The IRLL2705TRPBF serves as a silent, arc-free replacement for electromechanical relays and solenoids in 12 V and 24 V industrial control systems. Solid-state switching eliminates contact bounce and extends operational life beyond 100 million cycles versus 100k typical for mechanical relays. With 3.8 A continuous rating and 55 V blocking voltage, the part replaces small automotive relays for headlamp, horn, and auxiliary accessory control. Logic-level gate drive allows direct I/O pin control from industrial PLCs and microcontrollers, simplifying wiring harness design in retrofit and new installations.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRLL2705TRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRLL2705PBF | IRLL024NTRPBF | IRLL2705TRPBF-VB | NTR4101PT1G | BSL215CH6327XTSA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon (VBsemi) | onsemi | Infineon |
| Package | SOT-223 | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-223 - same | SOT-223 - same |
| VDS max | 55 V | 55 V | 30 V | 60 V | 60 V | 20 V (P-channel) |
| Gate Drive Level | Logic-level | Logic-level | Logic-level | Logic-level | Logic-level | Standard (10V) |
| Polarity | N-channel | N-channel | N-channel | N-channel | N-channel | P-channel (complementary) |
| Approx Unit Price (1000 qty) | $0.22 | $0.22 (same die) | $0.18 | $0.25 | $0.20 | $0.30 |
Bảo phân biệt quan trọng
- 55 V VDS in SOT-223 with logic-level gate drive (vsIRLL024NTRPBF)
- Genuine cross-brand drop-in SOT-223 second source (vsNTR4101PT1G)
- HEXFET fifth-generation ruggedized design (vsBSL215CH6327XTSA1)
Ghi chú thiết kế
Estimated: At ID=3.8 A and RDS(on)=40 mOhm, steady-state conduction loss is approximately 0.58 W. The SOT-223 package has typical theta_JA of 62 C/W on a 1 oz copper pad of 1 square inch, yielding a junction-to-ambient temperature rise of approximately 36 C above ambient. For reliable operation at full rated current, increase PCB copper area under the drain tab to at least 1 square inch of 2 oz copper, which drops theta_JA to approximately 31 C/W. If continuous operation near 3.8 A is required, consider the DPAK-packaged IRLR2705TRPBF with significantly better thermal performance.
Use the JEDEC TO-261 recommended land pattern for SOT-223, with thermal vias under the center tab to inner ground planes for improved heat spreading. Place a gate resistor of 10-100 ohm close to the gate pin to limit ringing and dv/dt-induced gate voltage overshoot. Keep the gate-trace short and away from switching node to minimize parasitic inductance; for high-frequency switching above 100 kHz, add a 10 kohm pull-down resistor from gate to source to prevent unintended turn-on during transient events.
Do not operate the IRLL2705TRPBF above 55 V VDS even transiently - inductive switching transients beyond VDS(max) will avalanche and degrade the part. Avoid using standard-level gate drive circuits; VGS below 4 V may leave the part in the linear region, causing high RDS(on) and thermal runaway. When sourcing as a second-source alternative, verify the cross-brand equivalent has the same drain-pin assignment (SOT-223 pin 3 and tab to drain) - some P-channel parts in the same package invert the pinout, which causes catastrophic short-circuit conditions if substituted without review.
Thông tin tuân thủ
RoHS and REACH compliant per Infineon product page. Lead-free indicated by PBF suffix. Not AEC-Q100 qualified - select automotive-grade Infineon parts for vehicle applications.
