IRLR3105TRPBF - 55V N-Channel HEXFET MOSFET, 25A, TO-252
MPN: IRLR3105TRPBF ✓ Hoạt độngIRLR3105TRPBF Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate drain current. N-channel MOSFETs such as the IRLR3105TRPBF are the workhorse of low-voltage DC power conversion - in the broader taxonomy they sit beneath discrete semiconductors and above simple passives. The HEXFET cell geometry, introduced by International Rectifier (now part of Infineon), places thousands of parallel cells across the die to minimize Rds(on) while keeping gate charge low, which translates directly into lower conduction and switching losses.
Key features of the IRLR3105TRPBF include logic-level gate drive (full enhancement at VGS=4.5 V, so it can be driven directly from 5 V microcontrollers and gate-driver outputs), 37 mOhm maximum Rds(on) at VGS=10 V, 13.3 nC total gate charge for fast switching edges, 55 V VDS rating suitable for 12 V and 24 V automotive / industrial buses, and a robust 57 W power dissipation capability when soldered to a sufficiently large drain-tab copper pour. The TO-252AA footprint is industry-standard and pin-compatible with the broader Infineon/IR D-PAK family.
The device uses Infineon's proven IR MOSFET silicon technology, which provides high avalanche ruggedness, low thermal resistance, and a body diode with adequate reverse-recovery characteristics for most bridge and synchronous-rectifier applications. Compared with newer OptiMOS generations the IRLR3105 has a higher Rds(on) and gate charge, but it remains a cost-effective, well-documented choice for cost-sensitive designs where bleeding-edge efficiency is not required.
Typical applications include DC motor drive and H-bridge PWM control, low-voltage synchronous rectification in non-isolated buck converters, solenoid and relay drivers, LED lighting load switching, battery protection and load-disconnect circuits in 12 V/24 V systems, and general-purpose power-ORing. The combination of a 55 V rating and 25 A current capability covers almost all 12 V and 24 V load-switching requirements with comfortable margin.
When designing with this part, ensure the drain tab is soldered to a copper area of at least 1 square inch to keep the junction temperature within safe limits - derate current by approximately 50% when mounted on the minimum recommended pad. Always observe the ±16 V VGS maximum to avoid gate-oxide rupture, and add a small gate-source resistor (10-100 ohm) to suppress ringing in high-di/dt switching topologies.
Bộ thay thế dễ dàng lắp đặt cho IRLR3105TRPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRLR3105TRPBF (cùng hình factor và footprint) — khác nhau ở Technology, Total Gate Charge (Qg), FET Type, Package, Avalanche Rated.
IRLR3105PBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLR2705TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →HUF75321D3ST
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR3711ZTRPBF
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLR024NTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →VBE1638
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLR3105TRPBF Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc | 25 A |
| Rds(on) max @ VGS=10V | 37 mOhm |
| Total Gate Charge (Qg) | 13.3 nC |
| Gate-Source Voltage (VGS) max | ±16 V |
| Input Capacitance (Ciss) | 710 pF @ 25 V |
| Power Dissipation (Pd) at Tc | 57 W |
| Hộp | TO-252AA (DPAK, 2 leads + tab) |
| Kiểu lắp đặt | Surface Mount |
| Gate Drive Type | Logic-Level |
| Trạng thái RoHS | Compliant |
| Packaging | Tape & Reel (TRPBF) |
| Supplier Device Package | TO-252AA (DPAK) |
Cấu hình chân IRLR3105TRPBF
| Chân 1 | Gate — Gate terminal - logic-level compatible, max ±16 V VGS |
| Chân 2 | Drain — Drain terminal (also connected to back tab) - 55 V max VDS |
| Chân 3 | Source — Source terminal - reference for VGS and Kelvin connection point |
| Chân Tab | Drain — Drain tab (back metal pad) - must be soldered to copper pour for thermal dissipation |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
IRLR3105TRPBF phù hợp cho 6 Áp dụngs: DC Motor Drive and H-Bridge PWM Control, Low-Voltage Synchronous Rectification in Buck Converters, Solenoid and Relay Driver Circuits, LED Lighting Load Switching, Battery Protection and Load-Disconnect Switch, Power OR-ing and Redundant Supply Switch.
DC Motor Drive and H-Bridge PWM Control
The IRLR3105TRPBF is well suited to DC motor drive and H-bridge PWM control because of its 25 A continuous drain current, 55 V VDS rating, and logic-level gate drive. In a typical 24 V brushed-DC H-bridge the MOSFET sits in the low-side switching position, switching at 20-50 kHz PWM; its 13.3 nC total gate charge keeps driver losses modest and its 37 mOhm Rds(on) keeps conduction losses around 3.7 W at 10 A. Compared with newer OptiMOS parts the IRLR3105 has higher gate charge, but its ruggedness and proven track record make it a go-to choice for cost-sensitive industrial motor control. Designers should add 10-100 ohm gate-source resistors to suppress ringing and ensure the drain tab is soldered to at least 1 square inch of copper for thermal relief at sustained high duty cycle.
Được đề xuất
Low-Voltage Synchronous Rectification in Buck Converters
In non-isolated 12 V-to-3.3 V or 24 V-to-5 V buck converters, the IRLR3105TRPBF can serve as the low-side synchronous rectifier switch. Its 37 mOhm Rds(on) at VGS=10 V keeps conduction losses to about 1.85 W at 5 A output, while its 13.3 nC gate charge and 710 pF Ciss allow switching frequencies up to 200 kHz with acceptable driver losses. The logic-level gate threshold lets it pair directly with 5 V buck-controller ICs. Compared with dedicated sync-FETs optimized for low Qg, the IRLR3105 has higher gate charge, so for highest efficiency designs at >500 kHz a newer OptiMOS would be preferable; for cost-driven industrial supplies at <200 kHz, the IRLR3105 hits a strong cost/performance balance.
Được đề xuất
Solenoid and Relay Driver Circuits
The IRLR3105TRPBF works well as a low-side solenoid or relay driver in 12 V and 24 V automotive and industrial systems. Its 25 A continuous current covers most solenoid and relay coil currents with margin, the 55 V VDS handles inductive flyback when paired with a freewheeling diode, and the logic-level gate allows direct drive from a 5 V microcontroller GPIO or automotive body-controller output. The 57 W power dissipation capability at Tc means sustained on-state currents up to 10 A are thermally manageable with a 1 square-inch copper pour. Designers should add a flyback diode across inductive loads to keep VDS below the 55 V maximum, and consider a 10 kohm gate-source pull-down to keep the MOSFET off during microcontroller reset.
Được đề xuất
LED Lighting Load Switching
For high-brightness LED lighting arrays operating from 12 V or 24 V rails, the IRLR3105TRPBF provides a low-cost, logic-level compatible PWM dimming switch. The 25 A continuous current drives long LED strings, and the 13.3 nC gate charge supports PWM dimming frequencies up to several kHz without significant driver loss. The 55 V VDS rating provides margin above 24 V bus transients, and the TO-252AA package dissipates 57 W when properly heatsunk. Compared with dedicated LED-driver ICs, a discrete IRLR3105 PWM switch is more flexible for high-current architectural or automotive lighting where standard LED drivers are not available. Add a 10 kohm gate-source resistor to ensure the MOSFET stays off when the PWM input floats.
Được đề xuất
Battery Protection and Load-Disconnect Switch
The IRLR3105TRPBF is a good fit for 12 V and 24 V battery protection and load-disconnect switches in portable, e-bike, and small-ESS applications. Its 25 A continuous current covers most load-disconnect requirements, the 55 V VDS handles 24 V battery transients, and the 37 mOhm Rds(on) keeps steady-state loss around 0.92 W at 5 A continuous load. The logic-level gate allows direct drive from a 3.3 V or 5 V battery-management microcontroller. The TO-252AA package is small enough for compact battery packs but rugged enough for in-field replacement. Compared with dedicated battery-protection ICs, a discrete IRLR3105 design is more flexible but lacks integrated cell-balancing and over-voltage protection.
Được đề xuất
Power OR-ing and Redundant Supply Switch
In redundant 12 V or 24 V power systems the IRLR3105TRPBF serves as a low-side OR-ing switch to combine two supplies while preventing backfeed. The 25 A current handles most 12 V server / telecom rail currents, the 55 V VDS covers 24 V telecom systems with margin, and the logic-level gate allows direct control from an OR-ing controller IC. The 37 mOhm Rds(on) keeps voltage drop to about 185 mV at 5 A. Compared with dedicated OR-ing controller + MOSFET modules, a discrete IRLR3105 design is more cost-effective at moderate currents (<10 A) and is easier to source from multiple distributors. Add a 100 kohm gate-source resistor to keep the FET off during controller power-up and prevent momentary cross-conduction.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRLR3105TRPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRLR3105PBF | IRLR2705TRPBF | HUF75321D3ST | VBE1638 |
|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | onsemi | VBsemi |
| VDS (max) | 55 V | 55 V | 55 V | 55 V | 60 V |
| Rds(on) max @ VGS=10V | 37 mOhm | 37 mOhm | 45 mOhm | 42 mOhm | lower than 37 mOhm |
| Gate Drive Type | Logic-Level | Logic-Level | Logic-Level | Standard | Logic-Level |
| Unit Price (qty 1, USD) | 0.88 | 0.95 | 0.65 | 0.78 | 0.45 |
Bảo phân biệt quan trọng
- True logic-level gate drive at 4.5 V (vsHUF75321D3ST)
- Lower gate charge for higher switching frequency (vsIRLR2705TRPBF)
- Wide distributor availability with 55V VDS rating (vsVBE1638)
Ghi chú thiết kế
Estimated: At 25 A continuous drain current in a TO-252AA package, power dissipation approaches the 57 W package limit. With a minimum 1 square inch of drain-tab copper pour, thermal resistance junction-to-ambient is approximately 50 C/W, yielding a 50 C junction temperature rise at 1 W dissipation. Designers should derate continuous current to 10-12 A on minimum footprints and always check the manufacturer datasheet SOA curve for the specific VDS/ID combination in their application.
The drain tab of the TO-252AA must be soldered to a copper pour of at least 1 square inch to provide both electrical connection and thermal dissipation. Keep the source trace short and wide to minimize parasitic inductance, which can cause voltage spikes and ringing during fast switching edges. Place the gate-drive resistor (10-100 ohm) close to the gate pin to suppress ringing caused by the gate-source capacitance and the parasitic lead inductance.
Do not exceed the ±16 V VGS maximum - even brief transients above this will rupture the gate oxide and destroy the MOSFET. Add a 10 kohm gate-source pull-down resistor to keep the MOSFET in the off state during microcontroller reset or power-up. For inductive loads (solenoids, motors, relays) always include a flyback diode to keep VDS below the 55 V maximum during turn-off. Do not parallel IRLR3105 devices without individual gate-source resistors to prevent parasitic-oscillation-induced current imbalance.
Thông tin tuân thủ
Pb-free (PBF suffix) and RoHS compliant per Infineon product page. The automotive-grade equivalent with AEC-Q101 qualification should be requested separately for automotive applications; the standard IRLR3105TRPBF is not AEC-Q qualified.
