IRLR2705TRPBF - 55V 28A N-Channel HEXFET MOSFET | Infineon
MPN: IRLR2705TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.92 | $0.92 |
| 10 | $0.78 | $7.80 |
| 100 | $0.62 | $62.00 |
| 500 | $0.51 | $255.00 |
| 1,000 | $0.43 | $430.00 |
| 2,500 | $0.36 | $900.00 |
Drop-in alternatives for IRLR2705TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IRLR2705TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 28 A |
| RDS(on) Max at VGS=10V | 40 mOhm |
| Gate Threshold Voltage (VGS(th)) | Logic-Level (compatible with 4V drive) |
| Total Gate Charge (Qg) | 16.7 nC |
| Power Dissipation (PD) at Tc=25C | 68 W |
| Operating Junction Temperature | -55C to +175C |
| Package | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| Technology | HEXFET (IR MOSFET generation 5) |
| Avalanche Rated | Yes |
| Lead-Free / RoHS | Yes (Pb-free, RoHS compliant) |
IRLR2705TRPBF Pin Configuration
| Pin 1 | GATE — Logic-level gate drive input (fully enhanced at 4-5V) |
| Pin 2 | DRAIN — Drain terminal (also electrically tied to the exposed thermal tab) |
| Pin 3 | SOURCE — Source terminal (return path for load) |
| Pin TAB | DRAIN (TAB) — Exposed thermal pad, internally connected to pin 2 DRAIN - must be soldered to PCB copper for thermal dissipation |
Safe Operating Area - IRLR2705TRPBF
Typical Applications
IRLR2705TRPBF is suitable for 7 applications: 12V Automotive Load Switch, DC Motor Driver (Low-Side), Synchronous Rectifier (Secondary-Side), Battery Management / Protection Switch, LED Driver (PWM Dimming), Solenoid / Valve Driver, E-Bike / Power Tool Controller.
12V Automotive Load Switch
The IRLR2705TRPBF is a strong fit for 12V automotive load-switching applications including lamp drivers, relay replacements, and ECU-controlled accessories. Its 55V VDS rating provides ample margin above the 13.8V nominal automotive rail plus load-dump transients up to 35V. The 40 mOhm RDS(on) at 5V VGS keeps conduction loss low for continuous loads up to ~10A on a 1-square-inch copper pour. Logic-level gate drive enables direct connection to 5V microcontroller outputs, eliminating the need for a gate-driver IC. The DPAK package's exposed thermal pad simplifies PCB thermal management in space-constrained under-hood modules.
Recommended
DC Motor Driver (Low-Side)
In low-side DC motor drive circuits the IRLR2705TRPBF switches the motor's negative terminal to PWM-modulate speed. The 28A continuous rating covers most 12V brush-DC motors under 150W, while the 16.7 nC gate charge keeps PWM rise/fall times fast at 25 kHz switching frequency without excessive gate-drive loss. The device is fully avalanche-rated, which protects it against the inductive kickback when the motor's stored energy collapses at PWM turn-off. Mount the DPAK tab to a copper pour of at least 200 mm^2 to keep junction temperature below 100C at full duty cycle.
Recommended
Synchronous Rectifier (Secondary-Side)
The IRLR2705TRPBF can serve as the synchronous rectifier MOSFET on the secondary side of isolated DC-DC converters up to ~100W output. Its low RDS(on) of 40 mOhm at 5V-10V VGS delivers high efficiency in 5V/12V output rails, while the small Qg of 16.7 nC permits operation at 200-500 kHz. Compared to a Schottky diode, the IRLR2705TRPBF typically reduces rectifier losses by 40-60% in the 3-5A load range. The logic-level gate drive is fully compatible with most synchronous-rectifier controller ICs that output 5V-10V gate signals.
Recommended
Battery Management / Protection Switch
In multi-cell Li-ion battery packs the IRLR2705TRPBF can function as the low-side discharge MOSFET in 2S-4S packs up to 12-20A continuous. Its logic-level gate threshold enables direct drive from the battery-protection IC without an auxiliary supply. The 55V VDS handles 4S pack voltages (16.8V max) with substantial margin. Designers should verify avalanche energy during short-circuit disconnect events against the datasheet EAS rating. Pairing two IRLR2705TRPBF in back-to-back (common-source) creates a bidirectional disconnect switch for charge/discharge control.
Recommended
LED Driver (PWM Dimming)
The IRLR2705TRPBF is well-suited to high-brightness LED string drivers where it PWM-switches the LED cathode to ground for dimming. Its fast switching (Qg = 16.7 nC) supports PWM dimming frequencies up to several kHz without visible flicker. With 28A continuous current it can drive LED strings totaling 100W or more from a 12V or 24V supply. The low RDS(on) at 5V VGS simplifies thermal management - at 5A load dissipation is only ~1W. Use a small gate resistor (10-47 ohm) to suppress ringing on long LED-cable harnesses.
Recommended
Solenoid / Valve Driver
Industrial solenoid and proportional-valve drivers benefit from the IRLR2705TRPBF's combination of 28A peak current capability, 40 mOhm RDS(on), and avalanche ruggedness. The MOSFET handles the inrush current when a solenoid energizes (often 5-10x the holding current) without secondary protection circuitry, simplifying the BOM. The TO-252AA package is compatible with automated SMT assembly, enabling compact industrial-control PCB designs. Logic-level gate drive allows direct interface with 5V MCU timers for PWM current regulation.
Recommended
E-Bike / Power Tool Controller
Cordless power-tool and e-bike controllers often use the IRLR2705TRPBF as a low-side switching element in 24V-36V brush-DC motor drives. The 55V VDS provides margin for 6S-7S Li-ion packs (25.2V max), while the 28A rating covers most sub-500W motor applications. Its 40 mOhm RDS(on) at logic-level VGS keeps conduction loss manageable in PWM-driven motor control. The DPAK footprint supports automated SMT assembly common in cost-sensitive power-tool production.
Recommended
Recommended Products Summary
Engineering reference data for IRLR2705TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLR2705TRLPBF | IRLR2905TRPBF | IRFR1205TRPBF | IRFR5305TRPBF | IRLR3410TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | P-Channel | N-Channel |
| VDS Max | 55 V | 55 V | 55 V | 55 V | 55 V | 100 V |
| Continuous Drain Current (Tc=25C) | 28 A | 28 A | 42 A | 44 A | 31 A | 17 A |
| RDS(on) Max at VGS=10V | 40 mOhm | 40 mOhm | 27 mOhm | 27 mOhm | 65 mOhm | 105 mOhm |
| Gate Threshold (VGS(th)) | Logic-Level (1-2V typ) | Logic-Level | Logic-Level | Logic-Level | Logic-Level | Logic-Level |
| Total Gate Charge (Qg) | 16.7 nC | 16.7 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Tc=25C) | 68 W | 68 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Logic-level gate drive enables direct 5V MCU interface (vs IRLR3410TRPBF)
- Lower RDS(on) at lower VDS class than high-voltage alternatives (vs IRLR3410TRPBF)
- Higher peak current and avalanche energy than older generations (vs Standard IRF-series N-channel MOSFETs)
Design Notes
Estimated: at continuous 10A load with VIN=12V (low-side switch with VDS~0.4V at 40 mOhm RDS(on)), the IRLR2705TRPBF dissipates P = I^2 x RDS(on) = 100 x 0.040 = 4.0W. The DPAK package thermal resistance from junction to ambient on 1 square inch of 2-oz copper is roughly 50 C/W. Junction temperature rise = 4.0W x 50 C/W = 200C above ambient, exceeding the 150C Tj limit. Practical guidance: for continuous currents above ~5A, use 2+ square inches of copper pour OR upgrade to IRFR2905/IRFR1205 (lower RDS(on)) OR add a small clip-on heatsink on the DPAK tab.
The DPAK package's thermal performance is dominated by the exposed tab. Place thermal vias (typically 9-16 vias of 0.3mm drill, 1mm pitch) directly under the tab to conduct heat into inner copper planes. Connect the tab to the Drain net - the source pin MUST NOT be bonded to the tab or you will short out the device. Use 2-oz copper on outer layers for high-current designs; 1-oz copper is acceptable only for <3A continuous loads. Keep high-current drain traces wide (>= 2mm per ampere) to minimize trace resistance and inductance.
Three pitfalls to avoid: (1) VGS exceeding +/-16V absolute maximum - never drive the gate from a 12V rail directly, use a 10V Zener or gate clamp. (2) Omitting the gate resistor - always include a 10-100 ohm gate resistor in series to damp the LC resonance between gate capacitance and circuit inductance; missing gate-R causes oscillation and EMI. (3) Forgetting the body-diode reverse-recovery in bridge topologies - the IRLR2705's body diode is slow; for synchronous-rectifier or half-bridge applications, add a parallel Schottky or use a part with a faster body diode.
Keep the gate-drive loop (gate-driver output -> gate resistor -> MOSFET gate -> MOSFET source -> back to gate-driver ground) as small as possible - aim for a loop area under 1 cm^2. Long gate loops pick up dv/dt noise from the switching drain node and can cause spurious turn-on or gate-oscillation. Place the gate resistor physically adjacent to the MOSFET gate pin, not at the driver output. For high-frequency switching (>100 kHz), use a Kelvin-source connection by routing the gate-driver return to a dedicated source-sense pin if available, or use a tight source-side ground via adjacent to the source pin.
Compliance Information
Pb-free (PBF suffix) and RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications requiring AEC-Q100, consider IRFR2905ZPbF-AU or contact Infineon for automotive-grade options. Halogen-free status not explicitly stated in the verified data.
