IRLR3410TRLPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon
MPN: IRLR3410TRLPBF ✓ Hoạt độngIRLR3410TRLPBF Tóm tắt
A power MOSFET is a voltage-controlled three-terminal switch whose drain-source channel conducts current when the gate-source voltage exceeds the threshold. HEXFET cells place many parallel vertical DMOS stripes on one die to minimize RDS(on) per unit silicon area, yielding low conduction loss and high current density. This device belongs to the discrete-semiconductor family (MOSFET -> power MOSFET -> N-channel MOSFET -> logic-level N-channel MOSFET) and sits in the power-management hierarchy of any switching converter or motor drive it powers.
Key benefits include 100V drain-source breakdown, 17A continuous drain current at TC=25°C, 79W power dissipation at TC=25°C, logic-level VGS(th) (typically 1.0-2.0V) so a microcontroller GPIO can drive the gate, and an avalanche-rated single-pulse body diode. The TO-252AA (DPAK) provides a low RθJC of about 1.5°C/W for tab-mounted heatsinking, while still allowing reflow soldering.
From an architectural standpoint, the device uses a stripe-cell planar HEXFET layout optimized for low on-resistance per area. Combined with low Qg, this yields low gate-drive loss in hard-switched topologies up to several hundred kHz. The fifth-generation process also improves UIS (avalanche) ruggedness over earlier HEXFET generations.
Typical uses are DC-DC converters (buck, boost, synchronous rectification), low-voltage motor drives (brushed DC, BLDC, solenoid drivers), battery protection / load switching in 12V-48V packs, and Class-D audio output stages. The logic-level gate drive and TO-252 footprint make it a popular drop-in for 12V automotive subsystems and 24V industrial rails.
When designing in, respect SOA limits (derate ID with rising TC), keep the gate trace short and use a 10Ω gate resistor for noise control, and provide sufficient copper pour under the tab to keep RθJA within budget at the expected load current.
This page consolidates current distributor pricing, verified drop-in equivalents, and practical design notes that are not all present in the manufacturer datasheet, giving engineers a single reference for sourcing and second-source decisions.
Bộ thay thế dễ dàng lắp đặt cho IRLR3410TRLPBF — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với IRLR3410TRLPBF (cùng hình factor và footprint) — khác nhau ở Technology, Package, MSL Level, Mounting Type, FET Type.
IRLR3410TRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLR3410TRRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRFR3410
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRLR3110Z
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
VBE1101M
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STD15NF10
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
IRFR3710ZTRPBF
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →IRLR3410TRLPBF Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLR3410TRLPBF |
| Technology | HEXFET (5th generation) N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 17 A |
| Pulsed Drain Current (IDM) | 60 A |
| On-Resistance RDS(on) max @ VGS=10V | 105 mOhm |
| Gate-Source Threshold VGS(th) typ | 2.0 V |
| Total Gate Charge (Qg) | 22.7 nC |
| Gate Drive Level | Logic level (5V capable) |
| Power Dissipation (PD) at TC=25C | 79 W |
| Nhiệt độ mối nối hoạt động | -55C to +175C |
| Hộp | TO-252AA (DPAK), surface mount |
| Kiểu lắp đặt | Surface Mount (tape and reel) |
| RoHS Compliance | Compliant (Pb-free) |
| Cấp MSL | 1 |
| Avalanche Rated | Yes (UIS tested) |
Cấu hình chân IRLR3410TRLPBF
| Chân 1 | Gate — MOSFET gate input (logic-level compatible) |
| Chân 2 | Drain (Tab) — MOSFET drain, internally connected to the metal tab on the back of the package |
| Chân 3 | Source — MOSFET source terminal |
Khu vực hoạt động an toàn - IRLR3410
Ứng dụng tiêu biểu
IRLR3410TRLPBF phù hợp cho 6 Áp dụngs: 12V Automotive Load Switching, Synchronous Rectification in Buck Converters, Brushed DC Motor Drive (H-Bridge), 48V Industrial Power Switching, Class-D Audio Output Stage, Battery Management and Protection.
12V Automotive Load Switching
The IRLR3410TRLPBF's 100V VDS rating and logic-level gate drive make it a strong fit for 12V automotive load-switch and ECU driver stages. With 17A continuous drain current at TC=25C and 105 mΩ max RDS(on) at VGS=10V, it dissipates only ~1W driving a 10A lamp or solenoid load, keeping the DPAK case cool without a heatsink. Place it between the 12V battery rail and the inductive load with a flyback diode across the coil; the part's avalanche-rated body diode absorbs turn-off transients from solenoids and motors. Compared to a standard 60V part, the 100V rating leaves comfortable margin for 24V jump-start and load-dump transients seen on automotive buses.
Được đề xuất
Synchronous Rectification in Buck Converters
As the low-side synchronous rectifier in a 12V-to-1V buck converter, the IRLR3410TRLPBF delivers a 22.7 nC total gate charge and 105 mΩ RDS(on) at VGS=10V - a strong combination for sub-500 kHz switching. The logic-level gate-drive compatibility means a 3.3V PWM controller can drive the part through a small bootstrap gate driver, simplifying the bill of materials. The DPAK's TO-252 tab provides about 1.5°C/W RθJC, so at 5A continuous it dissipates ~2.6W and the tab stays below 80°C with a 1-square-inch copper pour. Designers should still add a Schottky or gate-controlled dead-time to prevent shoot-through during the high-side-to-low-side commutation interval.
Được đề xuất
Brushed DC Motor Drive (H-Bridge)
In a discrete H-bridge driving a 24V brushed DC motor, two IRLR3410TRLPBF per leg deliver bidirectional control with 17A continuous rating per FET. The 100V drain-source rating handles back-EMF spikes from the motor inductance even under hard braking, while the logic-level gate drive lets a 5V logic IC or microcontroller drive each half-bridge directly through small gate resistors. The DPAK package's exposed tab keeps junction temperature manageable at the typical 5-8A motor load - designers should size copper area for ~30°C/W RθJA to sustain 10A continuous operation. Cross-conduction prevention via dead-time insertion in the control MCU is critical because the part's low VGS(th) (~2V) means even small gate glitches can turn the FET on unintentionally.
Được đề xuất
48V Industrial Power Switching
The IRLR3410TRLPBF's 100V breakdown comfortably covers 48V industrial bus systems, leaving more than 2x margin for transient ringing on long cables. With 17A continuous drain current at TC=25C and 79W power dissipation rating, it can switch 48V at several amps with proper thermal management. Application examples include 48V telecom bus switches, industrial solenoid drivers, and PoE++ auxiliary switches. The DPAK footprint accepts standard surface-mount reflow, which simplifies assembly compared to through-hole alternatives. For designs operating at the upper voltage end, add a 100V TVS across the drain-source to clamp inductive transients during switching events above 80V.
Được đề xuất
Class-D Audio Output Stage
Class-D audio amplifiers use complementary MOSFET pairs to drive the LC output filter, and the IRLR3410TRLPBF's 100V rating suits high-power subwoofer and PA amplifier stages. The 22.7 nC gate charge enables clean switching at 250-500 kHz PWM frequencies typical in Class-D designs, while 105 mΩ RDS(on) at VGS=10V keeps conduction loss to ~2% at full power. The logic-level gate drive simplifies the bootstrap gate-driver design versus a standard 10V gate-threshold part. Designers should add gate-source Zener clamps (~15V) to protect against dv/dt-induced avalanche when switching high-current inductive loads.
Được đề xuất
Battery Management and Protection
In a multi-cell Li-ion battery pack protection circuit or load-disconnect switch, the IRLR3410TRLPBF serves as the main series disconnect MOSFET handling continuous charge/discharge currents up to 17A. Its 100V VDS easily covers 4-10 cell packs with hot-swap and reverse-polarity transients, while 105 mΩ RDS(on) yields only ~1W conduction loss at 10A. The logic-level gate drive allows a low-power battery monitor IC to control the FET directly. The DPAK footprint supports standard SMT reflow, enabling fully automated pack assembly. Designers should add a TVS across the drain-source and a small gate-source pull-down resistor (~10 kΩ) to keep the FET off during undervoltage events.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho IRLR3410TRLPBF — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | IRLR3410TRPBF | IRLR3410TRRPBF | IRFR3410 | IRLR3110Z | VBE1101M | STD15NF10 |
|---|---|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-251AA (IPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi | STMicroelectronics |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V | 100 V |
| Logic-Level Gate Drive | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty 1, USD) | $1.34 | ~$1.40 | ~$1.40 | ~$1.40 | ~$1.60 | ~$0.40 | ~$0.90 |
Bảo phân biệt quan trọng
- Logic-level gate drive at full RDS(on) rating (vsIRF540N)
- Lowest Qg in the 100V logic-level DPAK class (vsSTD15NF10)
- Fifth-generation HEXFET process for low RDS(on) per area (vsIRLR3110Z)
Ghi chú thiết kế
Estimated: at VDS=48V, ID=5A continuous, and RDS(on)=105 mΩ at TC=100C, conduction loss is roughly 5A × 5A × 0.105Ω = 2.6W. With DPAK theta_JA of ~50°C/W on a 1-square-inch copper pour, junction temperature rise is ~130°C - exceeds the 175°C absolute limit at TC=100C, so derate to ~3A continuous or add a heatsink. For 12V/10A applications conduction loss drops to ~1W and a small copper pour suffices.
Keep the gate-trace loop area as small as possible - place the gate-driver return and the source-pin return as close as the pinout allows. Add a 10Ω-47Ω gate resistor to damp the LC resonance between gate-source capacitance and parasitic trace inductance. For double-pulse testing, source-lead inductance between the FET source pin and the gate-driver ground causes VGS undershoot; route the gate-driver ground directly to the source pin via a Kelvin connection whenever possible.
Do not exceed VGS = ±20V (datasheet absolute maximum). Add a 12V-15V gate-source Zener clamp when driving the IRLR3410TRLPBF from a gate-driver that pulls VGS to VCC above 15V. Avalanche energy (single pulse) is rated - confirm repetitive avalanche does not exceed SOA in flyback or motor-brake applications. For 48V bus hot-swap, add a TVS across drain-source to limit transient VDS below 100V during switch-closure inrush.
Solder the DPAK tab to a copper pour that connects to the drain pad (pin 2) - this provides both electrical connection and thermal dissipation. Use thermal vias under the tab to an internal copper plane to reduce theta_JA from ~50°C/W (no vias) to ~30°C/W (2 oz copper, 4×4 via array). Avoid narrow traces on the drain pad - they add unwanted source-lead inductance and degrade switching performance.
Thông tin tuân thủ
RoHS compliant per DigiKey listing. Lead-free (Pb-free) finish per 'PBF' suffix. Not AEC-Q100 qualified - automotive applications requiring qualification should select a Q1-graded variant or perform additional reliability testing.
