MRF5P21240HR6 - 52W 2110-2170 MHz W-CDMA RF Power LDMOS | NXP Semiconductors
MPN: MRF5P21240HR6 ✓ Hoạt độngMRF5P21240HR6 Tóm tắt
RF power transistors such as the MRF5P21240HR6 sit within the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family - a subclass of power MOSFETs designed to combine high RF gain and ruggedness with reasonable cost. Within the broader taxonomy they are power transistors -> discrete semiconductors -> RF power devices. LDMOS has become the dominant technology for sub-3 GHz base-station PA stages because of its high breakdown voltage, excellent linearity gain in swept-back-off RF conditions, and ability to handle high peak-to-average ratios typical of multicarrier W-CDMA signals.
Key features include a minimum drain-source breakdown of 65 V (giving ample headroom above the 28 V operating rail), 603 W absolute maximum power dissipation, a common-source dual-element configuration, and surface-mount ceramic packaging. The device's 13 dB gain at 2.11 GHz and its high-efficiency performance under 2-carrier W-CDMA drive conditions make it a workhorse final-stage transistor for UMTS Band I (uplink/downlink) power amplifiers.
Architecturally, the MRF5P21240HR6 is built on NXP's 7th-generation (Gen7) high-voltage LDMOS process, which places two dies inside a single ceramic NI-1230 housing to achieve the 52 W average output level. Internally matched on the input and partially matched on the output for the 2110-2170 MHz band, the device is biased at IDQ = 2200 mA with VDD = 28 V to deliver its rated linear output power.
Typical applications include W-CDMA/UMTS base-station PAs (Band I), 2-carrier multi-carrier amplifier bricks, and cellular repeaters. Designers choose this part when they need proven LDMOS ruggedness in surface-mount ceramic packaging for high-power macro-cell or micro-cell infrastructure.
A practical design tip: the HR6 suffix denotes a lower-thermal-resistance ceramic package compared to the older MRF5P21240R6. When migrating from R6 to HR6 the PCB land pattern is identical, so existing base-station layouts can be reused without rework. Always verify load-pull impedance at your specific bias and frequency before finalizing the output matching network.
Bộ thay thế dễ dàng lắp đặt cho MRF5P21240HR6 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
MRF5P21240R6
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MRF5P21240HSR6
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MRF5P21180HR6
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MRF5P21240HR6 Tỷ lệ tối đa & tính chất điện
| Kiểu transitor | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor |
| Configuration | Common Source, 2 Elements |
| Operating Frequency Range | 2110 to 2170 MHz |
| Drain-Source Voltage (VDS) Rated | 65 V minimum |
| Test Supply Voltage (VDD) | 28 V |
| Quiescent Current (IDQ) | 2200 mA |
| Output Power (Pout, 2-carrier W-CDMA avg.) | 52 W |
| Power Gain | 13 dB at 2.11 GHz |
| Maximum Power Dissipation (Absolute) | 603 W |
| Kiểu lắp đặt | Surface Mount |
| Hộp | NI-1230 ceramic, HR6 suffix |
| JESD-30 Code | R-CDFM-F4 |
| Terminal Position | Dual |
| Target Application | W-CDMA base-station power amplifier (UMTS Band I) |
| Bias Mode | Class AB |
| Lead-Free Status | Yes |
Cấu hình chân MRF5P21240HR6
| Chân 1 | Drain (D1) / RF Output — RF output, drain of internal die 1 |
| Chân 2 | Gate (G1) / RF Input — RF input, gate of internal die 1 |
| Chân 3 | Drain (D2) / RF Output — RF output, drain of internal die 2 |
| Chân 4 | Gate (G2) / RF Input — RF input, gate of internal die 2 |
DC Khu vực hoạt động an toàn
Ứng dụng tiêu biểu
MRF5P21240HR6 phù hợp cho 6 Áp dụngs: UMTS Band I W-CDMA Macro-Cell Base-Station PA, Multi-Carrier Linear Power Amplifier, Cellular Repeater / WLL Infrastructure, PCN-PCS / Cellular Radio Final Stage, Defense / Tactical RF Power Amplifier, RF Test & Measurement Power Source.
UMTS Band I W-CDMA Macro-Cell Base-Station PA
The MRF5P21240HR6 is the reference final-stage LDMOS transistor for UMTS Band I (2110-2170 MHz) macro-cell base-station power amplifiers. Its 52 W 2-carrier W-CDMA average output rating and 13 dB gain at 28 V are sized exactly for the 40-60 W Pout envelope required per PA brick in a typical 3-sector macro site. Designers choose this part because its high linearity gain under swept-back-off RF and its 65 V breakdown headroom guarantee ACPR margins even at full multi-carrier drive.
Được đề xuất
Multi-Carrier Linear Power Amplifier
The MRF5P21240HR6 is well suited to multi-carrier linear PA bricks that combine W-CDMA, LTE, and TD-SCDMA carriers in the same physical amplifier. Its LDMOS device's high peak-to-average tolerance and the NI-1230 ceramic package's low thermal resistance let the transistor sustain high dissipation without junction-temperature drift degrading linearity. Designers bias in Class AB at IDQ = 2200 mA and add digital predistortion (DPD) for ACLR compliance in multi-carrier macro sites.
Được đề xuất
Cellular Repeater / WLL Infrastructure
The MRF5P21240HR6 is used in cellular repeater and WLL (Wireless Local Loop) infrastructure operating in the 2110-2170 MHz band, where a 52 W average LDMOS PA stage extends coverage from a donor antenna to remote indoor or rural subscribers. Its surface-mount ceramic NI-1230 housing simplifies the mechanical build into a sealed outdoor enclosure, and its 65 V breakdown provides safety margin under high VSWR loads that repeaters occasionally see on poorly terminated donor antennas.
Được đề xuất
PCN-PCS / Cellular Radio Final Stage
The MRF5P21240HR6 can be deployed in Class AB final stages of legacy PCN-PCS cellular radio transmitters in the 2110-2170 MHz band, where its 13 dB gain at 2.11 GHz and 28 V rail operation match conventional driver-stage chain architectures. The device's two-element common-source internal topology simplifies PCB-level combining when higher output is needed by paralleling multiple NI-1230 devices.
Được đề xuất
Defense / Tactical RF Power Amplifier
Ruggedized defense and electronic-warfare subsystems in the 2110-2170 MHz range can use the MRF5P21240HR6 as a final-stage amplifier where LDMOS's inherent VSWR tolerance and NXP's hermetic ceramic packaging provide the reliability needed for field deployments. The 65 V breakdown and 603 W absolute dissipation ceiling support high-duty-cycle waveforms that would otherwise require more expensive GaN devices.
Được đề xuất
RF Test & Measurement Power Source
Lab and production RF test equipment uses the MRF5P21240HR6 as a known-good W-CDMA power source for calibrating over-the-air (OTA) chambers, base-station test racks, and EMC immunity setups in the UMTS Band I spectrum. Its repeatable 52 W 2-carrier W-CDMA performance and NXP-published load-pull data make it a stable reference PA for ATE-based test stations that need consistent RF drive across many test cycles.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MRF5P21240HR6 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MRF5P21240R6 | MRF5P21240HSR6 | MRF5P21180HR6 |
|---|---|---|---|---|
| Package | NI-1230 ceramic (HR6) | NI-1230 ceramic - same footprint, higher Rth | NI-1230 ceramic - same footprint, screened | NI-1230 ceramic - same footprint, lower band |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 1800-2000 MHz |
| Drain-Source Voltage Rated | 65 V | 65 V | 65 V | 65 V |
| Test Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Maximum Power Dissipation | 603 W | 603 W | 603 W | 603 W |
| Thermal Resistance (RthJC) | Lower (HR6 suffix) | Higher (R6 suffix) | Lower (HR6 package) | Lower (HR6 package) |
Bảo phân biệt quan trọng
- Lower thermal resistance ceramic package vs predecessor (vsMRF5P21240R6)
- Dual-die common-source in single NI-1230 ceramic (vsMRF5P21180HR6)
- Gen7 NXP LDMOS process ruggedness (vsMRF5P21240HSR6)
Ghi chú thiết kế
The NI-1230 ceramic package must be bolted to a copper or aluminum heat-spreader with the recommended torque (typically 1.0-1.2 N-m for the M2.5 mounting screws) to ensure the lowest possible junction-to-case thermal resistance. Estimated: at 52 W RF output and 28 V supply, the device dissipates roughly 30-40 W as DC heat; without proper mounting torque the junction temperature can rise 30-40 C above the heatsink, risking premature failure. Use thermal interface material rated for high-power RF ceramics.
The MRF5P21240HR6 is a ceramic-packaged surface-mount device, but its RF input/output leads must be soldered to a high-frequency PCB substrate (Rogers RO4350B or equivalent) with controlled-impedance 50 ohm traces matched to the device's internal partial matching. Keep gate and drain traces short and avoid 90-degree bends; use mitered 45-degree bends. Place the bias feed network (RF choke + bypass capacitors) close to the gate lead to prevent low-frequency oscillation.
Do not operate the MRF5P21240HR6 above the 65 V breakdown rating - even brief over-voltage transients from a poorly regulated 28 V supply can permanently damage the LDMOS die. Estimated: the absolute maximum VDS is 65 V per the datasheet header, but the operating ceiling is typically limited to 32 V. Always add over-voltage protection on the drain bias rail and verify the supply's inrush behavior at power-on before applying RF drive.
The internal common-source dual-die configuration means each drain lead and each gate lead must be treated as a separate RF port - use a balanced microstrip layout with identical-length gate traces and identical-length drain traces to each internal die, or the two halves will not combine in phase and output power drops by 3 dB or more. Symmetry of the input/output matching networks is more important than absolute trace length in this part.
Thông tin tuân thủ
Lead-Free Status confirmed by distributors. Halogen-free status not explicitly stated in the verified data; flagged unknown. AEC-Q100 not applicable - this is a base-station RF power transistor, not an automotive-grade part.
