MRF5P21240HR6 - 52W 2110-2170 MHz W-CDMA RF Power LDMOS | NXP Semiconductors
부품 번호: MRF5P21240HR6 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $132.5 | $1,325.00 |
| 100 | $119 | $11,900.00 |
| 250 | $109.5 | $27,375.00 |
| 500 | $99.75 | $49,875.00 |
MRF5P21240HR6 개요
RF power transistors such as the MRF5P21240HR6 sit within the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family - a subclass of power MOSFETs designed to combine high RF gain and ruggedness with reasonable cost. Within the broader taxonomy they are power transistors -> discrete semiconductors -> RF power devices. LDMOS has become the dominant technology for sub-3 GHz base-station PA stages because of its high breakdown voltage, excellent linearity gain in swept-back-off RF conditions, and ability to handle high peak-to-average ratios typical of multicarrier W-CDMA signals.
Key features include a minimum drain-source breakdown of 65 V (giving ample headroom above the 28 V operating rail), 603 W absolute maximum power dissipation, a common-source dual-element configuration, and surface-mount ceramic packaging. The device's 13 dB gain at 2.11 GHz and its high-efficiency performance under 2-carrier W-CDMA drive conditions make it a workhorse final-stage transistor for UMTS Band I (uplink/downlink) power amplifiers.
Architecturally, the MRF5P21240HR6 is built on NXP's 7th-generation (Gen7) high-voltage LDMOS process, which places two dies inside a single ceramic NI-1230 housing to achieve the 52 W average output level. Internally matched on the input and partially matched on the output for the 2110-2170 MHz band, the device is biased at IDQ = 2200 mA with VDD = 28 V to deliver its rated linear output power.
Typical applications include W-CDMA/UMTS base-station PAs (Band I), 2-carrier multi-carrier amplifier bricks, and cellular repeaters. Designers choose this part when they need proven LDMOS ruggedness in surface-mount ceramic packaging for high-power macro-cell or micro-cell infrastructure.
A practical design tip: the HR6 suffix denotes a lower-thermal-resistance ceramic package compared to the older MRF5P21240R6. When migrating from R6 to HR6 the PCB land pattern is identical, so existing base-station layouts can be reused without rework. Always verify load-pull impedance at your specific bias and frequency before finalizing the output matching network.
드롭인 대체품: MRF5P21240HR6 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF5P21240R6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF5P21240HSR6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF5P21180HR6
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF5P21240HR6 최대 정격 & 전기적 특성
| 트랜지스터 유형 | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | RF Power Field Effect Transistor |
| Configuration | Common Source, 2 Elements |
| Operating Frequency Range | 2110 to 2170 MHz |
| Drain-Source Voltage (VDS) Rated | 65 V minimum |
| Test Supply Voltage (VDD) | 28 V |
| Quiescent Current (IDQ) | 2200 mA |
| Output Power (Pout, 2-carrier W-CDMA avg.) | 52 W |
| Power Gain | 13 dB at 2.11 GHz |
| Maximum Power Dissipation (Absolute) | 603 W |
| 실장 유형 | Surface Mount |
| 패키지 | NI-1230 ceramic, HR6 suffix |
| JESD-30 Code | R-CDFM-F4 |
| Terminal Position | Dual |
| Target Application | W-CDMA base-station power amplifier (UMTS Band I) |
| Bias Mode | Class AB |
| Lead-Free Status | Yes |
MRF5P21240HR6 핀 구성
| 핀 1 | Drain (D1) / RF Output — RF output, drain of internal die 1 |
| 핀 2 | Gate (G1) / RF Input — RF input, gate of internal die 1 |
| 핀 3 | Drain (D2) / RF Output — RF output, drain of internal die 2 |
| 핀 4 | Gate (G2) / RF Input — RF input, gate of internal die 2 |
DC 안전 동작 영역
일반적인 애플리케이션
MRF5P21240HR6 적합 용도: 6 애플리케이션s: UMTS Band I W-CDMA Macro-Cell Base-Station PA, Multi-Carrier Linear Power Amplifier, Cellular Repeater / WLL Infrastructure, PCN-PCS / Cellular Radio Final Stage, Defense / Tactical RF Power Amplifier, RF Test & Measurement Power Source.
UMTS Band I W-CDMA Macro-Cell Base-Station PA
The MRF5P21240HR6 is the reference final-stage LDMOS transistor for UMTS Band I (2110-2170 MHz) macro-cell base-station power amplifiers. Its 52 W 2-carrier W-CDMA average output rating and 13 dB gain at 28 V are sized exactly for the 40-60 W Pout envelope required per PA brick in a typical 3-sector macro site. Designers choose this part because its high linearity gain under swept-back-off RF and its 65 V breakdown headroom guarantee ACPR margins even at full multi-carrier drive.
추천
Multi-Carrier Linear Power Amplifier
The MRF5P21240HR6 is well suited to multi-carrier linear PA bricks that combine W-CDMA, LTE, and TD-SCDMA carriers in the same physical amplifier. Its LDMOS device's high peak-to-average tolerance and the NI-1230 ceramic package's low thermal resistance let the transistor sustain high dissipation without junction-temperature drift degrading linearity. Designers bias in Class AB at IDQ = 2200 mA and add digital predistortion (DPD) for ACLR compliance in multi-carrier macro sites.
추천
Cellular Repeater / WLL Infrastructure
The MRF5P21240HR6 is used in cellular repeater and WLL (Wireless Local Loop) infrastructure operating in the 2110-2170 MHz band, where a 52 W average LDMOS PA stage extends coverage from a donor antenna to remote indoor or rural subscribers. Its surface-mount ceramic NI-1230 housing simplifies the mechanical build into a sealed outdoor enclosure, and its 65 V breakdown provides safety margin under high VSWR loads that repeaters occasionally see on poorly terminated donor antennas.
추천
PCN-PCS / Cellular Radio Final Stage
The MRF5P21240HR6 can be deployed in Class AB final stages of legacy PCN-PCS cellular radio transmitters in the 2110-2170 MHz band, where its 13 dB gain at 2.11 GHz and 28 V rail operation match conventional driver-stage chain architectures. The device's two-element common-source internal topology simplifies PCB-level combining when higher output is needed by paralleling multiple NI-1230 devices.
추천
Defense / Tactical RF Power Amplifier
Ruggedized defense and electronic-warfare subsystems in the 2110-2170 MHz range can use the MRF5P21240HR6 as a final-stage amplifier where LDMOS's inherent VSWR tolerance and NXP's hermetic ceramic packaging provide the reliability needed for field deployments. The 65 V breakdown and 603 W absolute dissipation ceiling support high-duty-cycle waveforms that would otherwise require more expensive GaN devices.
추천
RF Test & Measurement Power Source
Lab and production RF test equipment uses the MRF5P21240HR6 as a known-good W-CDMA power source for calibrating over-the-air (OTA) chambers, base-station test racks, and EMC immunity setups in the UMTS Band I spectrum. Its repeatable 52 W 2-carrier W-CDMA performance and NXP-published load-pull data make it a stable reference PA for ATE-based test stations that need consistent RF drive across many test cycles.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF5P21240HR6 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF5P21240R6 | MRF5P21240HSR6 | MRF5P21180HR6 |
|---|---|---|---|---|
| Package | NI-1230 ceramic (HR6) | NI-1230 ceramic - same footprint, higher Rth | NI-1230 ceramic - same footprint, screened | NI-1230 ceramic - same footprint, lower band |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 1800-2000 MHz |
| Drain-Source Voltage Rated | 65 V | 65 V | 65 V | 65 V |
| Test Supply Voltage | 28 V | 28 V | 28 V | 28 V |
| Maximum Power Dissipation | 603 W | 603 W | 603 W | 603 W |
| Thermal Resistance (RthJC) | Lower (HR6 suffix) | Higher (R6 suffix) | Lower (HR6 package) | Lower (HR6 package) |
주요 차별점
- Lower thermal resistance ceramic package vs predecessor (vs MRF5P21240R6)
- Dual-die common-source in single NI-1230 ceramic (vs MRF5P21180HR6)
- Gen7 NXP LDMOS process ruggedness (vs MRF5P21240HSR6)
설계 노트
The NI-1230 ceramic package must be bolted to a copper or aluminum heat-spreader with the recommended torque (typically 1.0-1.2 N-m for the M2.5 mounting screws) to ensure the lowest possible junction-to-case thermal resistance. Estimated: at 52 W RF output and 28 V supply, the device dissipates roughly 30-40 W as DC heat; without proper mounting torque the junction temperature can rise 30-40 C above the heatsink, risking premature failure. Use thermal interface material rated for high-power RF ceramics.
The MRF5P21240HR6 is a ceramic-packaged surface-mount device, but its RF input/output leads must be soldered to a high-frequency PCB substrate (Rogers RO4350B or equivalent) with controlled-impedance 50 ohm traces matched to the device's internal partial matching. Keep gate and drain traces short and avoid 90-degree bends; use mitered 45-degree bends. Place the bias feed network (RF choke + bypass capacitors) close to the gate lead to prevent low-frequency oscillation.
Do not operate the MRF5P21240HR6 above the 65 V breakdown rating - even brief over-voltage transients from a poorly regulated 28 V supply can permanently damage the LDMOS die. Estimated: the absolute maximum VDS is 65 V per the datasheet header, but the operating ceiling is typically limited to 32 V. Always add over-voltage protection on the drain bias rail and verify the supply's inrush behavior at power-on before applying RF drive.
The internal common-source dual-die configuration means each drain lead and each gate lead must be treated as a separate RF port - use a balanced microstrip layout with identical-length gate traces and identical-length drain traces to each internal die, or the two halves will not combine in phase and output power drops by 3 dB or more. Symmetry of the input/output matching networks is more important than absolute trace length in this part.
규정 준수 정보
Lead-Free Status confirmed by distributors. Halogen-free status not explicitly stated in the verified data; flagged unknown. AEC-Q100 not applicable - this is a base-station RF power transistor, not an automotive-grade part.
