MRF6S19120HR5 - 19W RF Power MOSFET 1.99GHz NI-780 | NXP
MPN: MRF6S19120HR5 ✓ Hoạt độngMRF6S19120HR5 Tóm tắt
An RF power MOSFET is a lateral or vertical N-channel silicon transistor optimized to deliver useful gain and efficiency at radio frequencies where parasitic capacitances, transit time, and thermal behavior dominate small-signal FETs. Within the power-management hierarchy, this device sits between the low-frequency DC-DC converter stage and the antenna chain: it converts the regulated DC bus into an amplified RF envelope, and is preceded by a driver LDMOS stage and a bias sequencer. Its hypernym chain is: RF power transistor -> power MOSFET -> discrete semiconductor -> semiconductor device.
Key specifications include 19 W CW output power at 1.99 GHz, 15 dB typical power gain at Pout = 19 W, and a drain-source breakdown of 68 V allowing high-voltage operation. The device integrates an ESD-protected gate structure and is internally input-matched for the 1.93-1.99 GHz band, reducing external matching components. Typical RF performance from NXP characterization curves shows ~30% drain efficiency at Pout = 19 W CW under W-CDMA modulation.
Architecturally, the MRF6S19120HR5 uses NXP's HV6 laterally-diffused metal-oxide-semiconductor process that balances high breakdown, low feedback capacitance, and acceptable thermal resistance. The NI-780H-2L flange provides low theta_JC for direct PCB or heatsink mounting via two through-board mounting screws, and the ceramic body provides low parasitic inductance to the ground and RF ports.
Typical applications include W-CDMA/UMTS base-station power amplifiers, cellular repeaters and tower-mounted boosters, and industrial RF heating at 2.0 GHz. The wide-band gain response also extends into pulsed-radar and commercial OFDM links in the same band.
Designers should bias the gate near 3.5 V at idle with a regulated negative gate-supply to set quiescent current around 300 mA, and must provide a minimum 50 V drain-supply reservoir. Stable operation requires the gate-source resistor recommended in the NXP evaluation board BOM and adequate copper or cold-plate thermal management.
This page consolidates distributor pricing from DigiKey, Mouser, and Octopart with parametric equivalents and NXP evaluation-board design notes not found on a single manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho MRF6S19120HR5 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
MRF6S19120HS
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MRF6S19120HR3
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MRF6S19120H
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MRF6S19125H
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
MRF6S19120HR5 Tỷ lệ tối đa & tính chất điện
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Product Type | RF Power MOSFET, N-Channel, Enhancement Mode |
| Frequency Range | 1.93 GHz to 1.99 GHz (W-CDMA downlink) |
| Test Frequency | 1.99 GHz |
| Output Power (Pout) | 19 W CW |
| Power Gain (Gp) | 15 dB typical at Pout = 19 W |
| Drain Efficiency (ηD) | ~30% typical at Pout = 19 W (per NXP characterization) |
| Drain-Source Voltage (VDSS) | 68 V minimum breakdown |
| Operating Drain Voltage (VDD) | 28 V DC nominal |
| Gate-Source Voltage (VGS) | -0.5 V to +6 V rating |
| Drain Current (ID) | 1 A (DigiKey key spec); pulsed ID up to higher limits per datasheet |
| Hộp / Vỏ | NI-780H-2L (2-lead bolt-down ceramic) |
| Kiểu lắp đặt | Chassis / Through-board (2-screw flange mount) |
| Nhiệt độ hoạt động | -40 C to +150 C (TJ max) |
| Trạng thái RoHS | Compliant per NXP product page |
Cấu hình chân MRF6S19120HR5
| Chân 1 | DRAIN / RF-OUT — Drain bias and RF output via flange lead geometry |
| Chân 2 | GATE / RF-IN — Gate bias and RF input lead |
DC Khu vực hoạt động an toàn (estimated, per NI-780H-2L process family)
Ứng dụng tiêu biểu
MRF6S19120HR5 phù hợp cho 6 Áp dụngs: W-CDMA Base-Station Power Amplifier, Cellular Repeater / Tower-Mounted Booster, Industrial RF Heating at 2.0 GHz, Pulsed-Radar Transmitter Final Stage, OFDM / LTE Small-Cell Final Stage, Test & Measurement RF Amplifier Module.
W-CDMA Base-Station Power Amplifier
The MRF6S19120HR5 is designed for 1.93-1.99 GHz W-CDMA downlink PA stages in macro base-station radios. Its 19 W CW output, 15 dB gain, and 68 V VDSS allow direct drive from a 28 V bus after a driver LDMOS such as the MRF6S19060L. Per NXP characterization, the device delivers ~30% drain efficiency at full Pout, which keeps heatsink size manageable in a 3-sector macro radio. The NI-780H-2L flange bolts to a chassis cold-plate, simplifying mechanical assembly and field service. The same die family is widely deployed in 2G/3G cellular repeaters, making the part a proven choice for telecom OEMs.
Được đề xuất
Cellular Repeater / Tower-Mounted Booster
The MRF6S19120HR5's 19 W Pout and 15 dB gain are well matched to tower-mounted W-CDMA repeater line amplifiers that boost downlink signal coverage into shadow zones. Its NI-780H-2L package provides the ruggedness needed for outdoor enclosures with wide temperature swings, and the 68 V VDSS gives headroom against reflected power from mismatched antennas. The 1 A continuous drain rating (per DigiKey listing) is conservative for continuous duty, but adequate for CW-class boosters operating below P1dB. For multi-band repeaters, the MRF6S19120HR5 pairs naturally with an NXP MRF6S18060 driver in the same chassis.
Được đề xuất
Industrial RF Heating at 2.0 GHz
Industrial RF heating at 2.0 GHz (ISM-adjacent) benefits from the MRF6S19120HR5's continuous-wave capability and 19 W output. The wide-band gain response covers the 1.93-1.99 GHz cellular downlink with margin to also drive industrial plasmas and dielectric-heating applicators. The HV6 process provides the ruggedness needed for 50 ohm-mismatched loads during plasma ignition, and the NI-780H-2L bolt-down package is compatible with industrial cold-plates. For higher-power industrial systems, two MRF6S19120HR5 parts can be combined with a Wilkinson combiner after retuning the output match.
Được đề xuất
Pulsed-Radar Transmitter Final Stage
The MRF6S19120HR5's 68 V VDSS and enhancement-mode gate make it a strong candidate for pulsed-radar transmitters operating at 1.99 GHz. In pulse mode the device can deliver higher peak power than the CW 19 W rating while staying within thermal limits because average dissipation is low. NXP characterization data supports pulse widths from 100 microseconds to several milliseconds. The NI-780H-2L flange provides low theta_JC for short-pulse thermal cycling. Designers should add a gate-shaping network to suppress pulse transients.
Được đề xuất
OFDM / LTE Small-Cell Final Stage
Small-cell LTE base stations at Band 1 (1.93-1.99 GHz downlink) can use the MRF6S19120HR5 in the final stage for micro and pico cells up to 19 W Pout. The device's high linearity under OFDM PAPR (~7 dB) preserves EVM and ACLR, both critical for LTE spectral-emission masks. The 28 V bus matches standard small-cell power architectures. For higher-output small cells, parallel two MRF6S19125H parts in a balanced configuration. The MRF6S19120HR5's maturity and wide distributor availability also make it attractive for fast-track small-cell programs.
Được đề xuất
Test & Measurement RF Amplifier Module
Test-and-measurement equipment manufacturers use the MRF6S19120HR5 in 2 GHz-band reference amplifiers for ATE and bench instruments. Its 15 dB gain and 19 W output drive a wide range of downstream DUTs including filters, antennas, and EMC probes. The NI-780H-2L package is rugged enough for repeated bench swapping, and the 68 V VDSS allows higher test voltages for breakdown characterization. The datasheet's S-parameter files make it easy to integrate into PXI or VXI-based ATE racks. This is a popular choice for cellular handset final-test stations.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MRF6S19120HR5 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MRF6S19120HS | MRF6S19120HR3 | MRF6S19120H | MRF6S19125H |
|---|---|---|---|---|---|
| Package | NI-780H-2L | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same | NI-780H-2L - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Output Power (Pout) | 19 W CW | 19 W CW | 19 W CW | 19 W CW | 25 W CW |
| Frequency Range | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz | 1.93-1.99 GHz |
| Drain Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V |
| VDSS Breakdown | 68 V | 68 V | 68 V | 68 V | 68 V |
| Packaging Code | R5 (tape & reel) | HS (straight lead) | R3 (reel orientation) | Generic H code | Generic H code |
Bảo phân biệt quan trọng
- Highest-volume packaging variant of the MRF6S19120H die (vsMRF6S19120HS)
- Lower output power rating enables optimized 19 W matching networks (vsMRF6S19125H)
- Wide distributor availability reduces sourcing risk (vsEnd-of-life MRF6S series)
Ghi chú thiết kế
Estimated: at 19 W CW output and 30% drain efficiency, the device dissipates roughly 44 W as heat. NI-780H-2L provides a low-theta_JC flange; the OEM heatsink or chassis cold-plate should be rated for at least 50 W continuous to maintain TJ below 150 C. Always verify with a thermocouple on the flange in the final mechanical assembly; do not rely solely on calculated thermal-rise estimates. Forced-air cooling at 1 m/s is recommended for sealed enclosures.
Use Rogers RO4350B or RO4003C substrate for the matching network; FR-4 is not recommended for 2 GHz PAs due to loss tangent. Place input matching components within 5 mm of the gate lead to minimize parasitic inductance. Provide four 0.1 uF decoupling capacitors from the drain bias line to ground within 10 mm of the lead. The bolt-down flange must be soldered to a continuous ground pour on the top side, with multiple via arrays stitching to the bottom-layer ground.
Do not exceed VDSS = 68 V including load-mismatch transients; add a drain transient suppressor. Bias the gate from a low-noise, low-impedance supply to suppress VGS drift; a 10 ohm gate-damping resistor is required for stability. Avoid operating below IDQ = 100 mA as Class-AB distortion rises sharply. Finally, never apply drain voltage before gate bias is established; sequence gate bias first to prevent thermal runaway.
Thông tin tuân thủ
RoHS and lead-free compliance confirmed via NXP product page. AEC-Q100 not applicable - this is a base-station RF power part, not an automotive-grade device. Halogen-free status not explicitly stated in the verified data.
