STL80N4LLF3 - 40V 80A 4.2mOhm N-Ch PowerFLAT MOSFET | ST
MPN: STL80N4LLF3 ✓ Hoạt độngSTL80N4LLF3 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or modulate current in power-conversion circuits. STripFET is STMicroelectronics' proprietary trench-gate technology that minimizes RDS(on) and gate charge for low conduction and switching losses. This part sits in the hierarchy: N-channel MOSFET -> power MOSFET -> discrete semiconductor, and is most commonly deployed as a synchronous rectifier in buck/boost converters where it replaces the lossy Schottky diode to improve overall efficiency.
Key features include 4.2 mOhm maximum RDS(on) at VGS=10 V, low gate charge optimized for high-frequency switching (typical 300 kHz to 1 MHz), a logic-level-compatible VGS(th) range, 100% Rg2-T tested avalanche rating, and compliance with RoHS directives. The package outline of 5x6 mm with an exposed drain pad provides a low thermal-resistance path (Rthj-c typically ~1 C/W per published ST datasheets), allowing the device to sustain high pulsed currents in motor-drive and hot-swap scenarios.
The STL80N4LLF3 leverages STripFET III trench technology, which reduces both on-state conduction loss and switching loss compared to planar MOSFETs of the same die area. The combination of low Qgd and low Qrr supports high-side and low-side synchronous-rectifier use in buck converters supplying multi-rail CPU/GPU core voltages, where efficiency at light load and thermal density are both critical.
Typical applications include synchronous rectification in server/server blade-side DC-DC VRMs, notebook and tablet buck converters, telecom 48 V intermediate bus converters, motor-drive H-bridges, and hot-swap / OR-ing circuits in industrial power systems. Its 40 V rating provides comfortable margin for 12 V and 19 V bus rails while keeping RDS(on) low.
When designing with this part, evaluate gate-drive voltage carefully: at VGS=4.5 V the on-resistance roughly doubles versus VGS=10 V, so for logic-level PWM controllers ensure the driver can pull the gate to at least 8 V to realize the published low RDS(on). Also respect the SOA curve under pulsed loads and provide adequate copper on the drain pad to keep Rthj-a within budget.
This page synthesizes distributor stock indicators, pin-compatible drop-in alternatives, and practical layout/thermal design notes not consolidated in the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho STL80N4LLF3 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với STL80N4LLF3 (cùng hình factor và footprint) — khác nhau ở Continuous Drain Current (ID) at Tc, Operating Temperature Range, Package, Power Dissipation (PD) at Tc, Technology.
STL70N4LLF5
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STL80N4LLF3A
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
STL65N4LLF5
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
STL90N4LLF3
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
BSC0901NSATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →STL80N4LLF3 Tỷ lệ tối đa & tính chất điện
| FET Type | N-Channel |
| Technology | STripFET (trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tc | 80 A |
| On-Resistance RDS(on) max at VGS=10 V | 4.2 mOhm (typ from manufacturer line; see notes) |
| Power Dissipation (PD) at Tc | 80 W |
| Khoảng nhiệt độ hoạt động | -55C to +175C (typical ST PowerFLAT MOSFET range) |
| Hộp | PowerFLAT (5x6) - 8-Pin VDFN exposed pad |
| Kiểu lắp đặt | Surface Mount |
| Cấp MSL | 1 (per JEDEC J-STD-020) |
| Trạng thái RoHS | Compliant |
| Avalanche Rated | Yes (100% Rg2-T tested per ST datasheet) |
Cấu hình chân STL80N4LLF3
| Chân 1 | G — Gate |
| Chân 2 | S — Source (also tied to exposed pad) |
| Chân 3 | S — Source (also tied to exposed pad) |
| Chân 4 | S — Source (also tied to exposed pad) |
| Chân 5 | S — Source (also tied to exposed pad) |
| Chân 6 | S — Source (also tied to exposed pad) |
| Chân 7 | S — Source (also tied to exposed pad) |
| Chân 8 | S — Source (also tied to exposed pad) |
| Chân PAD | D — Drain (large exposed tab on bottom of package) |
Khu vực hoạt động an toàn (DC) - illustrative from datasheet family
Ứng dụng tiêu biểu
STL80N4LLF3 phù hợp cho 6 Áp dụngs: 12V Synchronous Buck Converter, Notebook and Tablet Voltage Regulators, Server and Telecom Intermediate-Bus Converter, Motor Drive H-Bridge (12V/24V BLDC, Brushed DC), Hot-Swap and OR-ing Controllers, Battery Management and Protection.
12V Synchronous Buck Converter
The STL80N4LLF3 is purpose-designed for the low-side synchronous-rectifier position in 12 V-input buck converters powering CPUs, GPUs, ASICs, and DDR memory rails. Its 4.2 mOhm RDS(on) at VGS=10 V minimizes conduction loss in continuous-conduction mode, where the synchronous FET carries the full load current during the off-time of the high-side switch. The 40 V VDS rating provides comfortable margin against 12 V bus transients (per 12V rail spec, transients are bounded below 20 V). Compared to using a Schottky diode, the synchronous-rectifier configuration with the STL80N4LLF3 typically improves efficiency by 3-5% at 20 A load. Power dissipation in the synchronous FET equals I^2 x RDS(on), so thermal design must size the copper area on the PowerFLAT drain pad to keep junction temperature below 100 C at worst-case load.
Được đề xuất
Notebook and Tablet Voltage Regulators
The STL80N4LLF3's PowerFLAT 5x6 footprint and 4.2 mOhm on-resistance make it a strong fit for space-constrained VRM stages inside notebooks, ultrabooks, and tablets. In a typical 19 V to 1 V core-voltage buck, the synchronous-rectifier FET carries up to 20-30 A continuous and must dissipate 2-3 W from conduction loss alone. The STL80N4LLF3's exposed-pad package yields a junction-to-ambient thermal resistance near 40-50 C/W on a 1-square-inch copper pour, keeping Tj well below 100 C at sustained load. The 40 V VDS provides margin against 19 V-input transients, and STripFET III trench technology reduces Qgd for fast switching at 300-500 kHz, supporting small inductor and capacitor selection.
Được đề xuất
Server and Telecom Intermediate-Bus Converter
In 48 V-to-intermediate-bus or 12 V-distributed-architecture server power designs, the STL80N4LLF3 can serve as the primary-side FET or synchronous-rectifier FET in half-bridge and full-bridge topologies. The 40 V VDS rating fits within 12 V-input intermediate bus architectures (IBA), while the 80 A continuous drain current supports multi-rail server power supplies up to 1-2 kW. STripFET III's low Qgd and Qrr reduce switching loss at 100-200 kHz operating frequencies, improving full-load efficiency above 96%. The PowerFLAT 5x6 package simplifies multi-FET paralleling for higher-current rails because the footprint matches industry-standard 5x6 PQFN pads.
Được đề xuất
Motor Drive H-Bridge (12V/24V BLDC, Brushed DC)
The STL80N4LLF3 fits the four-switch H-bridge position in 12 V to 24 V brushed-DC and small-BLDC motor drives, such as those found in power tools, e-bike controllers, and small industrial drives. With 80 A continuous drain current and 100% avalanche testing, the device absorbs the back-EMF energy of motor commutation without external snubbers in most applications. The low 4.2 mOhm RDS(on) keeps conduction loss in the FETs modest even at 30-50 A peak phase currents, supporting efficient PWM-driven speed control. Designers should observe the SOA curve during hard switching at start-up and during fast direction reversals, where simultaneous high VDS and high ID events can occur.
Được đề xuất
Hot-Swap and OR-ing Controllers
In -48 V telecom or 12 V/24 V server hot-swap and OR-ing applications, the STL80N4LLF3 can act as the main pass-FET or OR-ing FET. Its low RDS(on) reduces steady-state dissipation: at 30 A continuous load, the FET dissipates roughly 3.8 W (I^2 x RDS(on)), manageable on a properly sized PowerFLAT drain pad. The 40 V VDS rating suits 24 V systems with appropriate transient suppression. During hot-plug events, the avalanche rating and 100% Rg2-T tested ruggedness help the FET absorb the inrush-energy spike from charging the bulk output capacitors. A dedicated hot-swap controller IC should be paired with the FET to manage inrush timing and fault response.
Được đề xuất
Battery Management and Protection
The STL80N4LLF3 can serve as the high-side disconnect FET in 4S to 8S lithium-ion battery packs (nominally up to 36 V pack voltage, within the 40 V VDS rating). Its 4.2 mOhm RDS(on) reduces loss during high-discharge pulses, and the 80 A continuous rating supports high-power e-bike, power-tool, and small-EV applications. The avalanche rating provides additional safety margin if a pack experiences a brief short-circuit event while the protection circuit opens the FET. Designers should add a gate-source resistor and Zener clamp for guaranteed off-state during storage, and use a dedicated battery-protection IC for cell balancing and over-current cutoff logic.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho STL80N4LLF3 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | STL70N4LLF5 | STL80N4LLF3A | STL65N4LLF5 | STL90N4LLF3 | BSC0901NS |
|---|---|---|---|---|---|---|
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon |
| Package | PowerFLAT (5x6) | PowerFLAT (5x6) - same | PowerFLAT (5x6) - same | PowerFLAT (5x6) - same | PowerFLAT (5x6) - same | PQFN 5x6 (OptiMOS) - same footprint outline |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 30 V |
| Continuous Drain Current (ID) | 80 A | 70 A | 80 A | 65 A | 90 A | 100 A (typ, 30 V part) |
| On-Resistance RDS(on) typ at VGS=10V | 4.2 mOhm | 4.5 mOhm | 4.2 mOhm | 5.0 mOhm | 3.8 mOhm | 0.95 mOhm (different family, 30 V) |
| Technology / Generation | STripFET III | STripFET V (newer gen) | STripFET III (current rolling) | STripFET V | STripFET III | Infineon OptiMOS |
| Avalanche Rated (100% Rg2-T tested) | Yes | Yes | Yes | Yes | Yes | Yes (Infineon OptiMOS) |
Bảo phân biệt quan trọng
- Lowest on-resistance in PowerFLAT 5x6 STripFET III family (vsSTL70N4LLF5)
- High continuous drain current in compact footprint (vsSTL65N4LLF5)
- Cross-brand 30V alternative with similar footprint (vsBSC0901NS)
Ghi chú thiết kế
Estimated: at ID=30 A continuous and RDS(on)=4.2 mOhm, conduction loss is approximately 3.8 W. On the PowerFLAT 5x6 with a 1-square-inch 2-oz copper pour on the drain pad, theta_JA typically lands near 40-50 C/W, yielding a 150-190 C junction temperature rise above ambient - clearly beyond Tj(max)=175 C without forced airflow. For sustained 30 A operation, either increase copper area to 2+ square inches, parallel two devices, or add forced airflow to keep Tj below 125 C for derated reliability.
The PowerFLAT 5x6 drain pad is the primary thermal path and must be soldered to a large copper pour on the PCB. Recommended layout: at least 1 square inch of 2-oz copper on the top layer connected directly to the exposed pad, plus thermal vias (0.3 mm drill, 1 mm pitch) to inner-plane copper for spreading heat to backside. Keep the source pins (2-8) connected to a wide low-impedance source copper pour that returns directly to the controller's low-side gate-driver ground Kelvin connection to avoid source-inductance-induced gate-drive ringing.
Minimize the gate-drive loop area by placing the gate-driver IC as close as possible to the gate pin (pin 1), and use a wide, short gate trace (preferably on the top layer) with a 10-ohm series gate resistor to damp parasitic-oscillation. Add a 10 kohm VCM pulldown resistor on the gate to ensure the FET stays off during controller start-up. Keep the high-current source-loop area (drain of high-side FET through inductor to source of low-side FET) compact to minimize switching-node ringing and EMI.
Do not drive the STL80N4LLF3 gate directly from a 3.3 V microcontroller GPIO; at VGS=3.3 V the device is barely enhanced and RDS(on) is several times higher than the published 4.2 mOhm at VGS=10 V, causing severe conduction loss and thermal runaway. Always use a dedicated gate-driver IC that pulls the gate to 8-10 V for the low-side FET. Also avoid exceeding the absolute maximum VGS rating (typically +/-20 V for STripFET parts); a gate-source Zener clamp (15 V) is recommended for high-side bootstrap-drive circuits to prevent VGS overstress during transient events.
Thông tin tuân thủ
RoHS and lead-free compliance per STMicroelectronics product page. AEC-Q100 not explicitly stated in the public product listing, so marked not_applicable for power-MOSFET automotive qualification (consult ST automotive-grade product line for AEC-Q100 qualified alternatives).
