1ED020I12FA2XUMA2 vs 1ED020I12B2XUMA1 比較

詳細並排比較 1ED020I12FA2XUMA2 由 Infineon 與 1ED020I12B2XUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED020I12FA2XUMA2 1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 ✓ 啟用中

規格比較

參數 1ED020I12FA2XUMA2 1ED020I12B2XUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Galvanically isolated single-channel IGBT gate driver —
Isolation Technology Coreless transformer (CT) Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) 4500 Vrms 4500 Vrms
Output Current (Source/Sink) 2 A (rail-to-rail) —
Number of Channels 1 1
Configuration Single low-side / high-side driver —
封裝 PG-DSO-20 PG-DSO-16-15 (300 mil wide-body DSO-16)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -40 C to +125 C —
Automotive Qualification AEC-Q100 qualified —
Common-Mode Transient Immunity (CMTI) [DATA_NEEDED: CMTI value] —
Propagation Delay (typ) [DATA_NEEDED: tpd value] —
UVLO Primary Side [DATA_NEEDED: VUVLO_VCC1] —
UVLO Secondary Side [DATA_NEEDED: VUVLO_VCC2] —
Propagation Delay Matching [DATA_NEEDED: matching value] —
RoHS 狀態 Compliant —
Insulation Type Basic insulation per DIN EN 60747-5-2 —
Driver Type IGBT / SiC / GaN compatible Single-channel IGBT gate driver, galvanically isolated
Output Current (typ.) — 2 A source / 2 A sink
Propagation Delay (typ.) — 35 ns
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
工作溫度 — -40 °C to +125 °C
MSL 等級 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

資料表與資源

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