1ED3124MC12HXUMA1 vs 1EDI20I12MFXUMA1 比較

詳細並排比較 1ED3124MC12HXUMA1 由 Infineon 與 1EDI20I12MFXUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3124MC12HXUMA1 1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon

1ED3124MC12HXUMA1 ✓ 啟用中
Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ 啟用中

規格比較

參數 1ED3124MC12HXUMA1 1EDI20I12MFXUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Channel Type Single-channel —
Configuration High-side / Low-side (non-inverting) —
Number of Drivers 1 —
輸出數量 1 —
Peak Source Current 13.5 A —
Peak Sink Current 14 A —
Isolation Technology Magnetic coupling (coreless transformer) —
Isolation Voltage (RMS) 5.7 kV —
Transient Overvoltage 8000 Vpk —
Supply Voltage (VCC2) 10.5 V to 35 V —
Supply Current (Max) 1.1 mA —
Propagation Delay (Typ) 90 ns —
上升時間 15 ns —
下降時間 30 ns —
工作溫度 -40 C to +125 C [DATA_NEEDED: operating temperature range]
封裝 PG-DSO-8 (DSO-8) PG-DSO-8-51 (8-pin DSO, 4 mm creepage)
安裝類型 Surface Mount Surface Mount
Protections UVLO, Short-Circuit (DESAT) —
Target Devices IGBT, SiC MOSFET —
RoHS 狀態 Compliant Compliant
功能 — Isolated single-channel high-side gate driver
Isolation Type — Galvanic (coreless transformer)
Number of Channels — 1
Output Current (Source/Sink) — 2 A peak
Active Miller Clamp Current — 2 A
Maximum Operating Voltage (Switch side) — 1200 V
Propagation Delay (typ.) — 300 ns
Input Logic — Inverting / Non-inverting
輸出配置 — Single high-side driver
Minimum Creepage — 4 mm
Short Circuit Protection — Yes (clamping)
Supply Voltage (Secondary) — [DATA_NEEDED: secondary supply voltage range]
CMTI — [DATA_NEEDED: common-mode transient immunity]
UVLO — Yes (secondary side)

資料表與資源

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