1ED3127MU12FXUMA1 vs 1ED020I12B2XUMA1 比較

詳細並排比較 1ED3127MU12FXUMA1 由 Infineon 與 1ED020I12B2XUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3127MU12FXUMA1 1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 - 10A Isolated Gate Driver 3kV | Infineon

1ED3127MU12FXUMA1 ✓ 啟用中

規格比較

參數 1ED3127MU12FXUMA1 1ED020I12B2XUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel isolated gate driver —
輸出數量 1 —
輸出配置 High-side / Low-side, Inverting / Non-Inverting —
Peak Output Current 10 A (source/sink) —
Continuous Output Current 9 A —
Supply Voltage (VCC2 secondary) 12 V to 35 V —
Supply Voltage (VCC1 primary) 3 V to 5.5 V —
Propagation Delay (typ.) 15 ns 35 ns
Delay Matching (typ.) 30 ns —
Galvanic Isolation 3000 Vrms (coreless transformer) —
工作溫度範圍 -40C to +125C —
Protection Features Miller clamp, UVLO, DESAT short-circuit protection —
封裝 PG-DSO-8-72 (SOIC-8 wide-body) PG-DSO-16-15 (300 mil wide-body DSO-16)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant —
Drives IGBT, MOSFET, SiC MOSFET —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Technology — Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) — 4500 Vrms
Number of Channels — 1
Output Current (typ.) — 2 A source / 2 A sink
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
工作溫度 — -40 °C to +125 °C
MSL 等級 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

資料表與資源

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