1ED3323MC12NXUMA1 vs 1EDN8511BXUSA1 比較

詳細並排比較 1ED3323MC12NXUMA1 由 Infineon 與 1EDN8511BXUSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1ED3323MC12NXUMA1 1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 - 5.7kV Isolated Gate Driver | Infineon

1ED3323MC12NXUMA1 ✓ 啟用中
Infineon
1EDN8511BXUSA1 1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 ✓ 啟用中

規格比較

參數 1ED3323MC12NXUMA1 1EDN8511BXUSA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel isolated gate driver —
Isolation Voltage (Vrms) 5.7 kVrms —
Peak Source Current 8.5 A 4 A
Peak Sink Current 9 A 8 A
Number of Channels 1 —
Primary-Side Supply Voltage (VDD1) 3.1 V to 5.5 V —
Secondary-Side Supply Voltage (VCC2) 9 V to 18 V —
Propagation Delay (typ) 85 ns —
Common-Mode Transient Immunity (CMTI) [DATA_NEEDED: CMTI in kV/us] —
Protection Features DESAT short-circuit, soft-off, Miller clamp, UVLO —
工作溫度範圍 -40 C to +125 C —
封裝 PG-DSO-16-40 PG-SOT23-6-2
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Family EiceDRIVER F3 Enhanced (1ED332x) —
Isolation Technology Coreless Transformer (CT) —
Channel Count — 1
Driver Configuration — Low-side
Input Stage — Inverting and non-inverting
Propagation Delay Accuracy — [DATA_NEEDED: typical propagation delay]
UVLO Threshold — 8 V
Driver Supply Voltage (VCC) — [DATA_NEEDED: VCC range upper limit]
工作接面溫度 — -40 °C to +150 °C
腳位數 — 6
Logic Input Compatibility — TTL / CMOS
Target Switch Type — Power MOSFET, GaN HEMT

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