1EDI20I12MFXUMA1 vs 1ED020I12B2XUMA1 比較

詳細並排比較 1EDI20I12MFXUMA1 由 Infineon 與 1ED020I12B2XUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ 啟用中

規格比較

參數 1EDI20I12MFXUMA1 1ED020I12B2XUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Isolated single-channel high-side gate driver —
Isolation Type Galvanic (coreless transformer) —
Number of Channels 1 1
Output Current (Source/Sink) 2 A peak —
Active Miller Clamp Current 2 A —
Maximum Operating Voltage (Switch side) 1200 V —
Propagation Delay (typ.) 300 ns 35 ns
Input Logic Inverting / Non-inverting —
輸出配置 Single high-side driver —
Minimum Creepage 4 mm —
Short Circuit Protection Yes (clamping) —
封裝 PG-DSO-8-51 (8-pin DSO, 4 mm creepage) PG-DSO-16-15 (300 mil wide-body DSO-16)
安裝類型 Surface Mount Surface Mount
工作溫度 [DATA_NEEDED: operating temperature range] -40 °C to +125 °C
Supply Voltage (Secondary) [DATA_NEEDED: secondary supply voltage range] —
CMTI [DATA_NEEDED: common-mode transient immunity] —
UVLO Yes (secondary side) —
RoHS 狀態 Compliant —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Technology — Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) — 4500 Vrms
Output Current (typ.) — 2 A source / 2 A sink
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
MSL 等級 — MSL-3 (per JEDEC J-STD-020)
Compliance — RoHS compliant

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