1N5711 vs BAT42-TAP 比較
詳細並排比較 1N5711 由 STMicroelectronics 與 BAT42-TAP 由 Vishay Intertechnology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1N5711 | BAT42-TAP |
|---|---|---|
| 品牌 | STMicroelectronics | Vishay Intertechnology |
| 類別 | Diodes | Diodes |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Diode Type | Small-signal Schottky barrier (RF) diode | Small-Signal Schottky Barrier |
| Peak Reverse Voltage (VRRM) | 70 V | — |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | — |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | [DATA_NEEDED: forward voltage at rated current] |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | — |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| 封裝 | DO-35 (DO-204AH) hermetic axial-lead glass | DO-204AH (DO-35) glass axial |
| 安裝類型 | Through-Hole | Through Hole |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | — |
| RoHS 狀態 | Compliant | Compliant |
| Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Average Forward Current (IF(AV)) | — | 200 mA |
| Non-Repetitive Surge Current (IFSM) | — | 4.0 A |
| Reverse Recovery | — | Fast switching (Schottky, no stored charge) |
| Junction Capacitance | — | [DATA_NEEDED: diode capacitance] |
| Reverse Leakage Current (IR) | — | [DATA_NEEDED: reverse leakage at rated VR] |
| Termination Style | — | Axial Leads |
| Packaging Suffix | — | -TAP (Ammo tape packing) |
| Configuration | — | Single Diode |
| Protection Feature | — | PN junction guard ring against ESD / excessive voltage |
| AEC-Q101 Option | — | Qualified version available on request |
| Mounting Technology | — | Wave solder / hand solder |