27C512-20HW vs 27C512-25 比較

詳細並排比較 27C512-20HW 由 Fujitsu 與 27C512-25 由 Microchip Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Microchip Technology
27C512-25 27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 Obsolete

規格比較

參數 27C512-20HW 27C512-25
品牌 Fujitsu Microchip Technology
類別 Memory ICs Memory ICs
生命週期狀態 停產終止 Obsolete
記憶體容量 512 Kbit (64K x 8) —
記憶體類型 CMOS EPROM (UV / OTP) CMOS EPROM (UV / OTP)
Access Time 200 ns —
供應電壓 5 V +/-10% —
Standby Current 20 uA typical (CMOS standby) —
組織 64K x 8 bit —
Programming Algorithm 100% Flashrite programming —
Pinout JEDEC-approved EPROM pinout —
Outputs Tri-state, O0 to O7 —
Control Signals CE (active-low), OE (active-low) —
封裝 LCC32 (32-lead chip carrier) DIP-28
安裝類型 Surface Mount Through Hole
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Programming Voltage (VPP) [DATA_NEEDED: VPP voltage] —
Active Current [DATA_NEEDED: active supply current] —
Erase Method UV erase (UV variant) / OTP (windowless variant) UV (windowed variant) or not erasable (OTP variant)
Manufacturer Fujitsu —
Memory Organization — 64K x 8 (524,288 bits)
Maximum Access Time — 250 ns
Supply Voltage (Read Mode) — 5 V +/- 10%
Standby Current (CMOS) — 20 uA typical
Operating Mode — Asynchronous
輸出類型 — 3-state, common I/O
Pinout Standard — JEDEC-approved 28-pin
Programming Method — High-voltage EPROM programming (Flashrite type)
Access Time Guarantee — Any byte in less than 250 ns
Technology — CMOS floating gate
RoHS 狀態 — [DATA_NEEDED: RoHS status]

資料表與資源

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