27C512-25 vs 27C512-25-X 比較

詳細並排比較 27C512-25 由 Microchip Technology 與 27C512-25-X 由 Fujitsu. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Microchip Technology
27C512-25 27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 - 512Kbit 64Kx8 CMOS EPROM 250ns | Microchip

27C512-25 Obsolete

規格比較

參數 27C512-25 27C512-25-X
品牌 Microchip Technology Fujitsu
類別 Memory ICs Memory ICs
生命週期狀態 Obsolete Obsolete
Memory Organization 64K x 8 (524,288 bits) —
記憶體類型 CMOS EPROM (UV / OTP) UV EPROM
Maximum Access Time 250 ns —
Supply Voltage (Read Mode) 5 V +/- 10% —
Standby Current (CMOS) 20 uA typical —
Operating Mode Asynchronous —
輸出類型 3-state, common I/O —
Pinout Standard JEDEC-approved 28-pin —
封裝 DIP-28 28-pin DIP (windowed ceramic or plastic OTP variant per suffix)
安裝類型 Through Hole Through Hole
Programming Method High-voltage EPROM programming (Flashrite type) —
Erase Method UV (windowed variant) or not erasable (OTP variant) —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Access Time Guarantee Any byte in less than 250 ns —
Technology CMOS floating gate CMOS
RoHS 狀態 [DATA_NEEDED: RoHS status] unknown (legacy non-RoHS-era part)
記憶體容量 — 512 Kbit (64K x 8)
組織 — 65,536 words x 8 bits
Access Time — 250 ns
Supply Voltage (Read) — 5 V +/- 10%
介面 — Parallel
Address Lines — 15 (A0-A14)
Data Lines — 8 (D0-D7), 3-state outputs
Control Signals — /CE (chip enable), /OE (output enable), /PGM (program)
Programming Voltage — [DATA_NEEDED: VPP programming voltage]
Standby Current — [DATA_NEEDED: standby current]
Active Current — [DATA_NEEDED: active current]
Pinout — JEDEC-approved 27C512 pinout

資料表與資源

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