2SJ74 vs 2SJ74-GR 比較

詳細並排比較 2SJ74 由 Toshiba 與 2SJ74-GR 由 Toshiba. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 2SJ74 2SJ74-GR
品牌 Toshiba Toshiba
類別 Transistors Transistors
生命週期狀態 停產終止 停產終止
Device Type P-Channel JFET (junction type) —
Drain-Gate Voltage (VGDS) -25 V —
Drain Current (ID) 20 mA —
Primary Application Low-noise audio amplifier —
Recommended Use First stages of EQ amplifiers and M.C. head amplifiers —
封裝 TO-92 (lead formed) 2-5F1D (SC-43), 3 PIN
安裝類型 Through Hole Through Hole
Configuration Single JFET Single FET
Channel Type P-Channel —
Technology Silicon junction JFET Silicon P Channel Junction Type
Grading Ranks GR, BL (by IDSS range) —
IDSS Range [DATA_NEEDED: IDSS range by rank] —
Gate-Source Cutoff Voltage (VGS(off)) [DATA_NEEDED: VGS(off)] [DATA_NEEDED: gate-source cutoff voltage]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] [DATA_NEEDED: input capacitance]
Total Power Dissipation (PD) [DATA_NEEDED: PD] —
工作溫度 [DATA_NEEDED: operating temperature range] —
Lead Finish Pb (per Mouser 2SJ74-BL listing) —
Compliance [DATA_NEEDED: RoHS/REACH status] —
Polarity — P-Channel
電晶體類型 — JFET (Junction Field-Effect Transistor)
Maximum Power Dissipation (PD) — 400 mW
Number of Units in IC — 1
Grade Suffix — GR (Idss grade classification)
Recommended Application — First stages of EQ amplifiers and M.C. head amplifiers
Gate-Drain Breakdown Voltage (VGDS) — [DATA_NEEDED: gate-drain breakdown voltage]
Drain-Source Voltage (VDSS) — [DATA_NEEDED: drain-source voltage]
Zero-Gate Drain Current (IDSS) — [DATA_NEEDED: IDSS range for GR grade]
工作溫度範圍 — [DATA_NEEDED: operating temperature range]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價