6EDL04I065PRXUMA1 vs 1ED020I12B2XUMA1 比較

詳細並排比較 6EDL04I065PRXUMA1 由 Infineon 與 1ED020I12B2XUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 - 650V 3-Phase Gate Driver IC | Infineon

6EDL04I065PRXUMA1 ✓ 啟用中

規格比較

參數 6EDL04I065PRXUMA1 1ED020I12B2XUMA1
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Three-Phase Gate Driver IC —
拓撲 Half-Bridge, 3-phase (6 outputs) —
Blocking Voltage 650 V —
輸出配置 6 outputs (3 high-side + 3 low-side) —
Logic Inputs Non-Inverting —
Source Current (typ.) 0.24 A —
Sink Current (typ.) 0.5 A —
Logic Supply Voltage (VCC) 3.3 V to 5 V (typ. 5 V) —
High-Side Floating Supply Voltage (VB) up to 650 V (offset) —
Bootstrap Diodes Integrated (3x) —
Over-Current Protection (OCP) Yes —
Under-Voltage Lockout (UVLO) Yes (per channel) —
Fault Output Yes (open-drain / active-low) —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay] 35 ns
工作接面溫度 -40 C to +125 C —
封裝 PG-TSSOP-25 PG-DSO-16-15 (300 mil wide-body DSO-16)
安裝類型 Surface Mount Surface Mount
MSL 等級 2 (per JEDEC J-STD-020) MSL-3 (per JEDEC J-STD-020)
RoHS 狀態 Compliant —
Driver Type — Single-channel IGBT gate driver, galvanically isolated
Isolation Technology — Coreless transformer (magnetic coupling)
Isolation Voltage (Vrms) — 4500 Vrms
Number of Channels — 1
Output Current (typ.) — 2 A source / 2 A sink
Supported Switch Voltage Class — Up to 1200 V IGBT / SiC MOSFET
DESAT Protection — Yes (programmable threshold)
Miller Clamp — Yes (integrated 2 A clamp FET)
Input Supply (VCC1) — 5 V (logic side)
Output Supply (VCC2) — Unipolar 15 V or bipolar -8.5 V / 15 V
Creepage Distance — 8 mm
工作溫度 — -40 °C to +125 °C
Compliance — RoHS compliant

資料表與資源

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