AT45DB041D-SU vs AT45DB041E 比較

詳細並排比較 AT45DB041D-SU 由 Renesas Electronics 與 AT45DB041E 由 Renesas Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Renesas Electronics
AT45DB041D-SU AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas

AT45DB041D-SU ✓ 啟用中
Renesas Electronics
AT45DB041E AT45DB041E - 4Mbit SPI DataFlash 85MHz 1.65V | Renesas

AT45DB041E - 4Mbit SPI DataFlash 85MHz 1.65V | Renesas

AT45DB041E ✓ 啟用中

規格比較

參數 AT45DB041D-SU AT45DB041E
品牌 Renesas Electronics Renesas Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DataFLASH NOR Flash - DataFlash (SPI NOR)
Memory Format FLASH —
Density 4 Mbit (4,325,376 bits) —
組織 2,048 pages x 264 bytes (binary) or 256 bytes (standard) —
介面 SPI, RapidS (SPI modes 0 and 3) SPI Serial (RapidS)
最大時脈頻率 66 MHz 85 MHz
供應電壓 2.7 V to 3.6 V —
SRAM Data Buffers 2 x 264 bytes 2 x 264 bytes
Page Program Time [DATA_NEEDED: page program time] —
Endurance 100,000 program/erase cycles per page —
Data Retention 20 years minimum —
Security Register 128 bytes —
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
封裝 8-pin SOIC (150 mil, EIAJ) 8-SOIC (208 mil)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant [DATA_NEEDED: RoHS status]
Lead-Free Yes —
Memory Capacity — 4 Mbit (512 KB)
Supply Voltage Range — 1.65 V to 3.6 V
Page Size — 264 bytes
Number of Pages — 2048
Erase Granularity — Page / Block (8 pages) / Sector
Write Protection — Hardware /WP pin + software sector protection
Access Type — Sequential access (DataFlash architecture)
Typical Applications — Digital voice, image, program code, data storage

資料表與資源

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