BSC009NE2LS5IATMA1 vs ISZ019N03L5SATMA1 比較

詳細並排比較 BSC009NE2LS5IATMA1 由 Infineon 與 ISZ019N03L5SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSC009NE2LS5IATMA1 ISZ019N03L5SATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Part Number BSC009NE2LS5IATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS™ 5 (25V/30V family) —
電晶體類型 N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-Source Voltage (V_DS) max 25 V —
Gate-Source Voltage (V_GS) max 20 V —
Gate-Threshold Voltage V_GS(th) typ 1.7 V (range 1.0-2.0 V) —
R_DS(on) max @ V_GS=10V 0.95 mΩ —
Continuous Drain Current (I_D) @ T_A=25°C 40 A —
Continuous Drain Current (I_D) @ T_C=25°C 217 A (pulsed, datasheet rating) —
Power Dissipation (P_D) @ T_A 2.5 W —
Power Dissipation (P_D) @ T_C 74 W —
Total Gate Charge (Q_G) typ 23 nC @ V_GS=0-4.5V —
Input Capacitance (C_iss) typ 3200 pF —
工作溫度範圍 -55°C to +150°C -55C to +175C (TJ max)
封裝 PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TSDSON-8-FL (5x6 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Terminal Finish Matte Tin (e3 per JESD-609) —
Number of Terminals 8 —
RoHS 狀態 Compliant —
Product Family — OptiMOS 5 (<= 40V)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 22 A
Continuous Drain Current (ID) at TC=25C — 40 A
RDS(on) at VGS=10V — 1.9 mΩ (typical, ID=20A)
Gate Threshold Voltage (VGS(th)) — 2 V (typical)
Gate-Source Voltage Rating (VGS) — ±20 V
Total Gate Charge (Qg) — 44 nC at VGS=10V
Input Capacitance (Ciss) — 2800 pF at VDS=15V
RoHS / REACH — Compliant
Avalanche Rated — Yes
RG-tested — 100%

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