BSC016N06NSTATMA1 vs BSC014N04LSTATMA1 比較

詳細並排比較 BSC016N06NSTATMA1 由 Infineon 與 BSC014N04LSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC016N06NSTATMA1 BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon

BSC016N06NSTATMA1 ✓ 啟用中
Infineon
BSC014N04LSTATMA1 BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 - 40V 1.4mΩ OptiMOS 5 N-MOSFET | Infineon

BSC014N04LSTATMA1 ✓ 啟用中

規格比較

參數 BSC016N06NSTATMA1 BSC014N04LSTATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC016N06NSTATMA1 BSC014N04LSTATMA1
FET Type N-Channel —
Technology OptiMOS 5 OptiMOS 5 (N-Channel Trench)
Drain-to-Source Voltage (VDS) 60 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Continuous Drain Current (ID, Ta=25C) 31 A —
On-Resistance RDS(on) max (VGS=10V) 1.6 mOhm —
Power Dissipation (Tc) 167 W —
Power Dissipation (Ta) 3 W —
封裝 PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8 FL (SuperSO8 5x6)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55 C to +150 C -55°C to +150°C
MSL 等級 [DATA_NEEDED: MSL level] MSL1
RoHS 狀態 Compliant Compliant
Lead-Free Yes Yes
Series OptiMOS —
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) @ TA=25°C — 33 A
Continuous Drain Current (ID) @ TC=25°C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R DS(on) max @ VGS=10V — 1.45 mΩ
R DS(on) typical @ VGS=10V — [DATA_NEEDED: RDS(on) typical]
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 115 W
腳位數 — 8

資料表與資源

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