BSC018N04LSGATMA1 vs BSC027N10NS5ATMA1 比較

詳細並排比較 BSC018N04LSGATMA1 由 Infineon 與 BSC027N10NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC018N04LSGATMA1 BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 - 40V 1.8mΩ N-Ch OptiMOS 3 | Infineon

BSC018N04LSGATMA1 ✓ 啟用中

規格比較

參數 BSC018N04LSGATMA1 BSC027N10NS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 NRND
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) OptiMOS 5 (100V)
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 100 A —
Continuous Drain Current (ID) @ TA=25°C 30 A —
Power Dissipation (PD) @ TC=25°C 125 W —
Power Dissipation (PD) @ TA=25°C 2.5 W —
RDS(on) Max @ VGS=10 V 1.8 mΩ —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
工作溫度範圍 -55°C to +150°C (TJ) [DATA_NEEDED: Tj min/max]
封裝 PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TSON-8-3 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant (Pb-free plating) Compliant
Avalanche Tested 100% (per datasheet) —
JEDEC Qualification Yes (qualified per JEDEC for target applications) —
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 194 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
MSL 等級 — [DATA_NEEDED: MSL rating]
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

資料表與資源

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