BSC018N04LSGATMA1 vs BSC027N10NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC018N04LSGATMA1 by Infineon and BSC027N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1 - 100V 194A OptiMOS 5 N-MOSFET | Infineon
BSC027N10NS5ATMA1 NrndSpecification Comparison
| Parameter | BSC018N04LSGATMA1 | BSC027N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $1.10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | OptiMOS 5 (100V) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 100 A | β |
| Continuous Drain Current (ID) @ TA=25Β°C | 30 A | β |
| Power Dissipation (PD) @ TC=25Β°C | 125 W | β |
| Power Dissipation (PD) @ TA=25Β°C | 2.5 W | β |
| RDS(on) Max @ VGS=10 V | 1.8 mΞ© | β |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 4.5 V, 10 V | β |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | [DATA_NEEDED: Tj min/max] |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TSON-8-3 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (Pb-free plating) | Compliant |
| Avalanche Tested | 100% (per datasheet) | β |
| JEDEC Qualification | Yes (qualified per JEDEC for target applications) | β |
| Part Number | β | BSC027N10NS5ATMA1 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at Ta | β | 23 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | 194 A |
| On-Resistance RDS(on) Max at VGS=10V | β | 2.7 mOhm |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 214 W |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Qualification | β | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) |