BSC020N03LSGATMA1 vs BSC010N04LSATMA1 比較

詳細並排比較 BSC020N03LSGATMA1 由 Infineon 與 BSC010N04LSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC010N04LSATMA1 BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 - 40V 100A OptiMOS 5 N-FET | Infineon

BSC010N04LSATMA1 ✓ 啟用中

規格比較

參數 BSC020N03LSGATMA1 BSC010N04LSATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta=25C 28 A —
Continuous Drain Current (ID) at Tc=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) 1 V to 2.2 V (typical range, per datasheet) —
On-State Resistance (RDS(on)) at VGS=10V approximately 2.0 mOhm —
Power Dissipation (PD) at Ta=25C 2.5 W —
Power Dissipation (PD) at Tc=25C 96 W —
工作溫度範圍 -55 C to +150 C (junction) -55C to +150C
封裝 / 外殼 PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) —
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel —
RoHS 狀態 Compliant —
MSL 等級 1 (per JEDEC J-STD-020, per Infineon datasheet) 1
Transistor Polarity — N-Channel
Drain-Source Breakdown Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) Max — +/- 20 V
Continuous Drain Current (ID, Tc=25C) — 100 A
Continuous Drain Current (ID, Ta=25C) — 38 A
On-Resistance RDS(on) Max @ VGS=10V — 1.0 mOhm
On-Resistance RDS(on) Test Condition — VGS = 10 V, ID = 50 A
Gate Threshold Voltage VGS(th) Typ — 2 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissipation (Tc=25C) — 139 W
Power Dissipation (Ta=25C) — 2.5 W
封裝 — PG-TDSON-8 FL (SuperSO8 5x6)
RoHS / Halogen-Free — RoHS compliant, halogen-free
Technology — OptiMOS 5
Avalanche Rated — 100% avalanche tested

資料表與資源

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