BSC021N08NS5ATMA1 vs IPT015N10N5ATMA1 比較
詳細並排比較 BSC021N08NS5ATMA1 由 Infineon 與 IPT015N10N5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ 啟用中規格比較
| 參數 | BSC021N08NS5ATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC021N08NS5ATMA1 | IPT015N10N5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench) | OptiMOS™ 5 |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tc=25°C) | 226 A | — |
| Continuous Drain Current (I_D, Tc=100°C) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) max (V_GS=10 V) | 2.1 mΩ | — |
| Gate-Source Voltage V_GS max | ±20 V | — |
| Power Dissipation P_D (Tc=25°C) | 214 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | SuperSO8 5x6 (PG-TSON-8-3) | PG-HSOF-8-1 (TOLL) |
| 安裝類型 | Surface Mount | Surface Mount |
| Total Gate Charge Q_G typ | [DATA_NEEDED: total gate charge] | — |
| R_thJC thermal resistance max | [DATA_NEEDED: R_thJC] | — |
| RoHS 狀態 | Compliant (Pb-free) | Compliant |
| MSL 等級 | MSL 1 (per JEDEC J-STD-020) | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Delivery Form | Tape & Reel (T&R) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 300 A |
| On-Resistance RDS(on) Max | — | 1.5 mΩ |
| Power Dissipation (PD, Tc) | — | 375 W |
| Configuration | — | Single |
| 工作溫度 | — | -55°C to +175°C |
| Gate Threshold VGS(th) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Output Capacitance (Coss) | — | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | — | Up to 43% reduction |
| Packaging | — | Tape & Reel |