BSC028N06NSTATMA1 vs IPB081N06L3GATMA1 比較
詳細並排比較 BSC028N06NSTATMA1 由 Infineon 與 IPB081N06L3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC028N06NSTATMA1 | IPB081N06L3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | OptiMOS 3 |
| Part Number Base | BSC028N06NS | — |
| Technology | MOSFET N-Channel (OptiMOS 5) | OptiMOS 3 (low-voltage power MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 24 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 2.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V to 3.5 V | — |
| Total Gate Charge Qg | 37 nC @ VGS=10V | — |
| Input Capacitance Ciss | 3000 nC [DATA_NEEDED: confirm exact pF from datasheet] | — |
| Output Capacitance Coss | 825 pF | — |
| Reverse Transfer Capacitance Crss | 56 pF | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 100 W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | PG-TDSON-8-7 (SuperSO8, 5x6 mm) | PG-TO263-3 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | — |
| MSL 等級 | 1 | 1 (unlimited) |
| AEC-Q101 Automotive Qualified | [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ] | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 1.2 V min, 2.1 V typ, 2.6 V max |
| On-Resistance RDS(on) at VGS=10V | — | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | — | 79 W |
| 工作溫度範圍 | — | -55 C to +175 C (junction) |
| 腳位數 | — | 3 |
| Pin Configuration | — | Gate / Drain / Source (D2PAK standard) |