BSC030N03LSGATMA1 vs BSC030N03MSGATMA1 比較

詳細並排比較 BSC030N03LSGATMA1 由 Infineon 與 BSC030N03MSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC030N03LSGATMA1 BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon

BSC030N03LSGATMA1 - 30V 100A 3mOhm OptiMOS 3 N-FET | Infineon

BSC030N03LSGATMA1 ✓ 啟用中
Infineon
BSC030N03MSGATMA1 BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 - 30V N-Ch MOSFET, 3mΩ OptiMOS | Infineon

BSC030N03MSGATMA1 ✓ 啟用中

規格比較

參數 BSC030N03LSGATMA1 BSC030N03MSGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 OptiMOS 3M
FET Type N-Channel N-Channel
Drain-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ Tc=25C 100 A —
Continuous Drain Current (Id) @ Ta=25C 23 A —
RDS(on) Max @ VGS=10V 3 mOhm —
RDS(on) Max @ VGS=4.5V [DATA_NEEDED: typical RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (Vgs th) Typ 2.2 V —
Gate Charge (Qg) Typ @ VGS=15V 55 nC —
Output Charge (Qoss) 66 pF —
Input Capacitance (Ciss) Typ 4.3 nF —
Power Dissipation (Pd) @ Ta=25C 2.5 W —
Power Dissipation (Pd) @ Tc=25C 69 W —
工作接面溫度 -55C to +150C -55°C to +150°C
封裝 PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8, 8-pin, exposed pad)
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant Compliant
MSL 等級 1 —
Avalanche Rated Yes (100% tested) —
Technology — MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 21 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
Drain-Source On-Resistance (RDS(on)) — 3.0 mΩ (typical at VGS=10V)
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc=25°C — 69 W
Drive Voltage (Min/Max RDS(on)) — 4.5V / 10V
Status — Active

資料表與資源

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