BSC034N06NSATMA1 vs BSC028N06NSTATMA1 比較

詳細並排比較 BSC034N06NSATMA1 由 Infineon 與 BSC028N06NSTATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC034N06NSATMA1 BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 ✓ 啟用中
Infineon
BSC028N06NSTATMA1 BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 - 60V 2.8mΩ N-Ch OptiMOS 5 MOSFET | Infineon

BSC028N06NSTATMA1 ✓ 啟用中

規格比較

參數 BSC034N06NSATMA1 BSC028N06NSTATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity N-Channel —
Drain-Source Voltage (VDS) 60 V 60 V
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25C 100 A 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max at VGS=10V 3.4 mOhm 2.8 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation at Ta=25C 2.5 W —
Power Dissipation at Tc=25C 74 W —
工作溫度範圍 -55C to +150C —
Technology OptiMOS 5 MOSFET N-Channel (OptiMOS 5)
封裝 PG-TDSON-8-7 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8, 5x6 mm)
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL level] 1
RoHS 狀態 Compliant Compliant
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Part Number Base — BSC028N06NS
Continuous Drain Current (ID) at TA=25C — 24 A
Gate Threshold Voltage VGS(th) typ — 2.5 V to 3.5 V
Total Gate Charge Qg — 37 nC @ VGS=10V
Input Capacitance Ciss — 3000 nC [DATA_NEEDED: confirm exact pF from datasheet]
Output Capacitance Coss — 825 pF
Reverse Transfer Capacitance Crss — 56 pF
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 100 W
工作接面溫度 — -55C to +175C
無鹵素 — Yes
AEC-Q101 Automotive Qualified — [DATA_NEEDED: confirm from datasheet - this is the NS base, automotive grade may differ]

資料表與資源

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