BSC040N08NS5ATMA1 vs IAUC100N08S5N043ATMA1 比較
詳細並排比較 BSC040N08NS5ATMA1 由 Infineon 與 IAUC100N08S5N043ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC040N08NS5ATMA1 | IAUC100N08S5N043ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC040N08NS5ATMA1 | — |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Maximum Drain Current (ID, Tc=25C, package-limited) | 121 A | — |
| On-Resistance (RDS(on) max, VGS=10V) | 4 mOhm | — |
| Power Dissipation (Ta=25C, 1in² PCB) | 2.5 W | — |
| Power Dissipation (Tc=25C) | 104 W | — |
| 封裝 | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-34 (SuperSO8) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作接面溫度 | -55 C to +175 C | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | 1 | — |
| Primary Application | Synchronous rectification in telecom and server power supplies | — |
| Part Series | — | IAUC / OptiMOS 5 |
| 電晶體類型 | — | N-Channel MOSFET (Enhancement Mode) |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 100 A (package limited) |
| Continuous Drain Current (chip-limited) | — | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W |
| Maximum R<sub>DS(on)</sub> | — | 4.3 mΩ |
| Maximum Power Dissipation (P<sub>D</sub>) | — | 125 W (T<sub>C</sub>) |
| 工作溫度範圍 | — | -55°C to +175°C |
| 腳位數 | — | 8 |
| 濕度敏感等級 (MSL) | — | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |
| Channel Mode | — | Enhancement |