IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
MPN： IAUC100N08S5N043ATMA1 ✓ 啟用中IAUC100N08S5N043ATMA1 概覽
Key features include AEC-Q101 automotive qualification, 100% avalanche-tested silicon, MSL1 moisture sensitivity rating up to 260°C peak reflow, 175°C maximum operating junction temperature, and RoHS-compliant (Green Product) lead-free construction. The OptiMOS 5 platform delivers industry-leading figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>), minimizing both conduction and switching losses in high-frequency applications.
The IAUC100N08S5N043ATMA1 utilizes Infineon's latest-generation OptiMOS 5 trench MOSFET technology, which significantly reduces gate charge (Q<sub>g</sub>) and output capacitance (C<sub>oss</sub>) compared to previous generations. This translates into lower switching losses in PWM applications such as motor drives, DC-DC converters, and synchronous rectification stages. The 4.3 mΩ on-resistance minimizes conduction losses at high currents, while the low thermal resistance of the SuperSO8 package enables efficient heat removal to the PCB copper.
Typical applications include automotive 48V mild-hybrid systems, electric power steering (EPS), brushless DC (BLDC) motor drives, DC-DC converter primary switches, synchronous rectification in telecom and server supplies, and high-current battery management switching. The AEC-Q101 qualification specifically targets automotive OEMs requiring ASIL-rated power conversion.
When designing with this part, ensure the gate drive voltage exceeds the threshold by at least 10 V for full enhancement and minimum R<sub>DS(on)</sub>. The exposed drain pad of the PG-TDSON-8-34 package must be soldered to a sufficiently large copper area (recommended 1 oz copper, minimum 1 cm²) to keep junction temperature within the 175°C maximum rating under full-load conditions.
This page synthesizes distributor pricing, parametric comparisons, and practical PCB design notes for the IAUC100N08S5N043ATMA1 in a format optimized for both engineers evaluating power stage designs and AI-assisted part selection tools.
直接替換替代品，適用於 IAUC100N08S5N043ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IAUC100N08S5N043ATMA1 （相同外形與佔位） — 差異在於 Package, Operating Temperature Range, Technology, MSL Level, Drain-Source Voltage (VDS).
IAUC100N08S5N031ATMA1
✅ 直接替換📋 參考替代品（不在目錄中）
IAUC100N10S5L040
✅ 直接替換📋 參考替代品（不在目錄中）
IAUC90N10S5N062ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUC80N04S6N036ATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC040N08NS5ATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC042NE7NS3GATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUC100N08S5N043ATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Part Series | IAUC / OptiMOS 5 |
| 電晶體類型 | N-Channel MOSFET (Enhancement Mode) |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 100 A (package limited) |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W |
| Maximum R<sub>DS(on)</sub> | 4.3 mΩ |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) |
| 工作溫度範圍 | -55°C to +175°C |
| 封裝 | PG-TDSON-8-34 (SuperSO8) |
| 安裝類型 | Surface Mount |
| 腳位數 | 8 |
| 濕度敏感等級 (MSL) | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested |
| RoHS / REACH | RoHS Compliant (Green Product) |
| Technology | OptiMOS 5 (Trench) |
| Channel Mode | Enhancement |
IAUC100N08S5N043ATMA1 腳位配置
| 腳位 1 | Source — Source connection (pin 1 of SuperSO8) |
| 腳位 2 | Source — Source connection |
| 腳位 3 | Source — Source connection |
| 腳位 4 | Gate — Gate drive input |
| 腳位 5 | Source — Source connection |
| 腳位 6 | Source — Source connection |
| 腳位 7 | Source — Source connection |
| 腳位 8 | Drain — Drain connection (also via exposed pad) |
安全工作區 (DC)
典型應用
IAUC100N08S5N043ATMA1 適用於 6 應用s: 48V Automotive Mild-Hybrid DC-DC Converter, Brushless DC (BLDC) Motor Drive, Synchronous Rectification in Telecom DC-DC, Electric Power Steering (EPS) Power Stage, Battery Management Switching (BMS), Industrial 24V/36V Motor Control.
48V Automotive Mild-Hybrid DC-DC Converter
The IAUC100N08S5N043ATMA1 is ideal for 48V mild-hybrid automotive DC-DC converters that step down from 48V to 12V for conventional vehicle loads. Its 80V V<sub>DS</sub> rating handles 48V bus transients with margin, while the 4.3 mΩ R<sub>DS(on)</sub> minimizes conduction loss at 50-80A continuous current. The AEC-Q101 qualification is mandatory for automotive OEMs. In a typical bidirectional 48V-12V converter topology, two IAUC100N08S5N043ATMA1 devices form the synchronous half-bridge, switching at 100-200 kHz with forced-air cooling to keep junction temperature below 150°C.
推薦
Brushless DC (BLDC) Motor Drive
In three-phase BLDC motor drives for 24-48V systems, the IAUC100N08S5N043ATMA1 serves as the low-side switch in each phase leg, handling PWM switching at 20-50 kHz with 100A peak current capability. The 4.3 mΩ R<sub>DS(on)</sub> keeps conduction loss low during the PWM on-time, while the SuperSO8 package's exposed pad enables direct PCB heat sinking. A complete 3-phase inverter uses six IAUC100N08S5N043ATMA1 devices, paired with a gate driver IC and current-sense amplifier. The 175°C maximum junction temperature supports underhood automotive mounting.
推薦
Synchronous Rectification in Telecom DC-DC
The IAUC100N08S5N043ATMA1 excels as the synchronous rectifier (low-side FET) in 48V-input isolated DC-DC converters for telecom and server applications. Its low R<sub>DS(on)</sub> of 4.3 mΩ reduces rectification loss compared to Schottky diodes, especially at high output currents (40-60A typical). The 80V rating handles 48V nominal input with margin for transients. Used in full-bridge or active-clamp forward topologies switching at 100-250 kHz, the part's low Q<sub>g</sub> from OptiMOS 5 technology minimizes drive losses. PG-TDSON-8-34 enables compact, high-density PCB layouts.
推薦
Electric Power Steering (EPS) Power Stage
The IAUC100N08S5N043ATMA1 is used in automotive Electric Power Steering systems as the high-current switch in the EPS motor drive inverter, delivering up to 100A to the steering assist motor. AEC-Q101 qualification is mandatory for safety-critical steering applications, and the 80V V<sub>DS</sub> rating supports 12V and 24V vehicle electrical systems with substantial transient margin. The 4.3 mΩ R<sub>DS(on)</sub> keeps the H-bridge conduction loss manageable during peak steering torque events. Pair with ASIL-rated gate drivers and ISO 26262-compliant system design.
推薦
Battery Management Switching (BMS)
In high-current battery management systems (BMS) for e-mobility and energy storage, the IAUC100N08S5N043ATMA1 serves as the main disconnect switch or pre-charge MOSFET. Its 100A continuous drain current handles peak discharge currents from 48V battery packs, while the 4.3 mΩ R<sub>DS(on)</sub> minimizes voltage drop across the disconnect path. The AEC-Q101 qualification supports automotive battery applications, and the 80V rating covers 48V nominal packs with margin. The SuperSO8 package's low thermal resistance enables compact BMS designs with minimal heatsinking.
推薦
Industrial 24V/36V Motor Control
The IAUC100N08S5N043ATMA1 is well-suited for industrial 24V and 36V motor drives, robotics, and automation systems where its 80V V<sub>DS</sub> rating provides generous headroom over the typical 36V maximum supply. The 4.3 mΩ R<sub>DS(on)</sub> handles continuous currents of 50-80A efficiently, while the SuperSO8 package simplifies PCB layout in space-constrained motor controller enclosures. Typical circuits include H-bridge motor drivers, three-phase inverters for servo motors, and high-current solenoid drivers. The 175°C junction temperature rating supports industrial environments with elevated ambient temperatures.
推薦
推薦產品摘要
工程參考資料，適用於 IAUC100N08S5N043ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IAUC100N08S5N031ATMA1 | IAUC100N10S5L040 | BSC040N08NS5ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 (SuperSO8) | PG-TDSON-8-34 (SuperSO8) - same | PG-TDSON-8-34 (SuperSO8) - same | PG-TDSON-8-34 (SuperSO8) - same |
| V<sub>DS</sub> max | 80 V | 80 V | 100 V | 80 V |
| R<sub>DS(on)</sub> max | 4.3 mΩ | 3.1 mΩ | 4.0 mΩ | 4.0 mΩ |
| Continuous I<sub>D</sub> at T<sub>C</sub>=25°C | 100 A | 100 A | 100 A | 100 A |
| Power Dissipation | 125 W | 125 W | 125 W | 125 W |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Max Junction Temperature | 175°C | 175°C | 175°C | 175°C |
主要差異化特點
- Lower R<sub>DS(on)</sub> in same footprint (3.1 mΩ vs 4.3 mΩ) (對比IAUC100N08S5N031ATMA1)
- Higher V<sub>DS</sub> rating for more transient margin (對比IAUC100N10S5L040)
- Higher V<sub>DS</sub> rating (80 V vs 40 V) for industrial 24V/48V systems (對比IAUC80N04S6N036ATMA1)
- Industry-leading OptiMOS 5 FOM (R<sub>DS(on)</sub> × Q<sub>g</sub>) (對比BSC040N08NS5ATMA1)
設計說明
Estimated thermal analysis: At continuous 100 A drain current with R<sub>DS(on)</sub>=4.3 mΩ, conduction loss is P = I² × R<sub>DS(on)</sub> = 100² × 0.0043 = 43 W. The PG-TDSON-8-34 package's thermal resistance R<sub>thJC</sub> is approximately 1.2 K/W (per Infineon datasheet), so junction temperature rise above case is ΔT = 43 × 1.2 = 51.6°C. With 25°C ambient and forced-air cooling, junction stays below 150°C. Without forced air, a substantial copper pour (≥6 cm² on top + bottom layers) is required to keep R<sub>thJA</sub> below 15 K/W.
Layout recommendations for the PG-TDSON-8-34 package: (1) Solder the exposed drain pad directly to a top-layer copper pour of at least 6 cm² with multiple thermal vias to inner copper planes. (2) Use 1 oz copper weight minimum (2 oz preferred) on top and bottom layers. (3) Place the gate drive circuitry within 25 mm of pin 4 to minimize gate-loop inductance, which causes ringing and possible false triggering. (4) Keep source connections (pins 1-3, 5-7) symmetrically routed to balance current sharing and minimize parasitic source inductance.
Common pitfalls when using the IAUC100N08S5N043ATMA1: (1) Exceeding the 175°C maximum junction temperature - always verify thermal design at worst-case load and ambient. (2) Driving the gate with insufficient voltage - use V<sub>GS</sub>=10 V to achieve the datasheet R<sub>DS(on)</sub>; lower V<sub>GS</sub> dramatically increases on-resistance. (3) Ignoring avalanche energy - though the part is 100% avalanche tested, repeated avalanche operation reduces long-term reliability. (4) Insufficient gate-source pull-down resistance (≥10 kΩ) can cause Miller-effect turn-on in half-bridge configurations.
For half-bridge or synchronous rectifier layouts using two IAUC100N08S5N043ATMA1 devices, minimize the high-side-to-low-side drain-source switching loop by placing the two MOSFETs as close together as possible. Use wide copper pours (≥5 mm) for the switching node to reduce parasitic inductance. Add a 100 nF ceramic bypass capacitor between the high-side source (switching node) and the low-side drain (input rail) within 5 mm of the MOSFETs to suppress voltage spikes and reduce switching losses.
合規資訊
AEC-Q101 (automotive) qualified per Infineon datasheet - this is the automotive-specific qualification. RoHS compliant (Green Product) per Infineon datasheet. MSL1 moisture sensitivity rating up to 260°C peak reflow. 100% avalanche tested per Infineon datasheet. Operating temperature up to 175°C. Halogen-free per Green Product designation.
