BSC059N04LSGATMA1 vs BSC066N06NSATMA1 比較
詳細並排比較 BSC059N04LSGATMA1 由 Infineon 與 BSC066N06NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC059N04LSGATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | OptiMOS 5 60 V trench-gate |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 73 A | — |
| Continuous Drain Current (ID, Ta=25C) | 16 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm | — |
| Power Dissipation (Tc=25C) | 50 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total, typical nC] | — |
| 工作溫度範圍 | -55 C to +150 C | — |
| 封裝 | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 |
| RoHS 狀態 | Compliant | Compliant |
| REACH Status | Compliant | — |
| Channel Type | N-Channel | — |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Total Gate Charge (Qg) | — | 26 nC (typ) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| 工作接面溫度 | — | -55°C to +150°C |