BSC059N04LSGATMA1 vs BSC066N06NSATMA1 Comparison
Detailed side-by-side comparison of BSC059N04LSGATMA1 by Infineon and BSC066N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC059N04LSGATMA1 | BSC066N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | OptiMOS 5 60 V trench-gate |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 73 A | — |
| Continuous Drain Current (ID, Ta=25C) | 16 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 5.9 mOhm | — |
| Power Dissipation (Tc=25C) | 50 W | — |
| Power Dissipation (Ta=25C) | 2.5 W | — |
| Gate-Source Threshold Voltage VGS(th) | 1.2 V to 2.0 V (typ) | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg total, typical nC] | — |
| Operating Temperature Range | -55 C to +150 C | — |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| REACH Status | Compliant | — |
| Channel Type | N-Channel | — |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A |
| Continuous Drain Current (ID) at TC=100°C | — | 45 A |
| Pulsed Drain Current (IDM) | — | 256 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | — | 6.6 mΩ (max) |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V (typ) |
| Total Gate Charge (Qg) | — | 26 nC (typ) |
| Power Dissipation (PD) at TC=25°C | — | 46 W |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 1.3 °C/W |
| Operating Junction Temperature | — | -55°C to +150°C |