BSC0902NSIATMA1 vs BSC094N06LS5ATMA1 比較

詳細並排比較 BSC0902NSIATMA1 由 Infineon 與 BSC094N06LS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSC0902NSIATMA1 BSC094N06LS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 30V —
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 30 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TA=25C 23 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: IDM]
On-State Resistance RDS(on) Max at VGS=10V 2.8 mOhm —
Gate Charge QG(0V..10V) 24 nC —
Output Charge QOSS 17 nC —
Power Dissipation (TA) 2.5 W —
Power Dissipation (TC) 48 W —
工作溫度範圍 -55C to +150C (junction) —
封裝 PG-TDSON-8-6 (TDSON-8) PG-TDSON-8-6 (SuperSO8 5x6)
安裝類型 Surface Mount Surface Mount
Built-in Diode Yes (single with built-in diode) —
MSL 等級 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS 狀態 Compliant Compliant
Lead-Free Yes —
無鹵素 Yes —
Part Number — BSC094N06LS5ATMA1
Technology — OptiMOS™ 5 (logic-level)
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 47 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS=10 V — 9.4 mΩ
RDS(on) max at VGS=4.5 V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typ]
Power Dissipation (PD) at TC=25°C — 36 W
工作接面溫度 — -55 °C to +150 °C

資料表與資源

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