BSC0906NSATMA1 vs BSC094N06LS5ATMA1 比較
詳細並排比較 BSC0906NSATMA1 由 Infineon 與 BSC094N06LS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC0906NSATMA1 | BSC094N06LS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) at Ta | 18 A | — |
| Continuous Drain Current (ID) at Tc | 63 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| 封裝 | PG-TDSON-8-6 (SuperSO8, 5x6 mm) | PG-TDSON-8-6 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS | OptiMOS™ 5 (logic-level) |
| RDS(on) max (typical reference) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg @ VGS=10V] | [DATA_NEEDED: Qg typ] |
| 工作溫度範圍 | -55C to +150C (junction, typical) | — |
| 腳位數 | 8 | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC094N06LS5ATMA1 |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Continuous Drain Current (ID) at TC=100°C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| RDS(on) max at VGS=10 V | — | 9.4 mΩ |
| RDS(on) max at VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation (PD) at TC=25°C | — | 36 W |
| 工作接面溫度 | — | -55 °C to +150 °C |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |