BSC146N10LS5ATMA1 vs BSZ150N10LS3GATMA1 比較
詳細並排比較 BSC146N10LS5ATMA1 由 Infineon 與 BSZ150N10LS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC146N10LS5ATMA1 | BSZ150N10LS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 5 (logic-level) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at Tc=25 C | 44 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: IDM] | — |
| RDS(on) max at VGS=10 V | 14.6 mOhm | — |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (typ. ~1.7 V) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| 工作溫度範圍 | -55 C to +150 C (TJ max) | — |
| 封裝 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL moisture sensitivity level] |
| RoHS 狀態 | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ150N10LS3GATMA1 |
| Technology / Family | — | OptiMOS 3 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25 °C) | — | 40 A |
| On-Resistance RDS(on) max | — | 15 mΩ |
| Power Dissipation (TA=25 °C) | — | 2.1 W |
| 功率耗散 (TC=25°C) | — | 63 W |
| Operating Temperature Range (TJ) | — | -55 °C to +150 °C |
| Gate Threshold VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge Qg] |
| Lead-Free / Reflow | — | Yes (lead-free, 260 °C peak reflow compatible) |