BSC150N03LDGATMA1 vs BSC0504NSIATMA1 比較

詳細並排比較 BSC150N03LDGATMA1 由 Infineon 與 BSC0504NSIATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 BSC150N03LDGATMA1 BSC0504NSIATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
Configuration Dual N-Channel MOSFET Array (half-bridge) —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) @ TA=25C 20 A —
Continuous Drain Current (Id) @ TA=70C [DATA_NEEDED: Id at TA=70C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm] —
Gate-Source Voltage (Vgs) ±20 V —
Gate Threshold Voltage (Vgs(th)) 1.0 V to 2.5 V —
On-State Resistance (Rds(on)) @ Vgs=10V [DATA_NEEDED: typical Rds(on) mOhm] —
On-State Resistance (Rds(on)) @ Vgs=4.5V [DATA_NEEDED: typical Rds(on) mOhm] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg nC] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: typical Qgd nC] —
Output Charge (Qoss) [DATA_NEEDED: typical Qoss nC] —
Power Dissipation (Pd) 26 W —
工作接面溫度 -55C to +150C —
封裝 PG-TDSON-8-4 (5x6 mm) PG-TDSON-8-6
安裝類型 Surface Mount Surface Mount
MSL 等級 1 —
RoHS 狀態 Compliant unknown
無鹵素 Yes —
電晶體類型 — N-channel MOSFET
Drain-to-Source Voltage — 30 V
Continuous Drain Current at Ta — 21 A
Continuous Drain Current at Tc — 72 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Technology Family — OptiMOS 5
腳位數 — 8 pins
Exposed Pad — Yes, according to distributor package description
On-State Resistance — [DATA_NEEDED: on-state resistance]
Gate Charge — [DATA_NEEDED: gate charge]
閘極臨界電壓 — [DATA_NEEDED: gate threshold voltage]
熱阻 — [DATA_NEEDED: thermal resistance]
工作溫度範圍 — [DATA_NEEDED: operating temperature range]
AEC-Q100 Qualification — [DATA_NEEDED: AEC-Q100 qualification]
Lead-Free Status — unknown
Halogen-Free Status — unknown
REACH Status — unknown

資料表與資源

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