BSP125H6433XTMA1 vs BSP125H6327XTSA1 比較
詳細並排比較 BSP125H6433XTMA1 由 Infineon 與 BSP125H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSP125H6433XTMA1 | BSP125H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel Enhancement Mode | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | — |
| Continuous Drain Current (ID) at TA | 120 mA | — |
| Power Dissipation (PD) at TA | 1.8 W | — |
| 封裝 | PG-SOT223-4 (3+tab) | PG-SOT223-4 (SOT-223-3 + tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Lead Plating | Pb-free | — |
| RoHS 狀態 | Compliant | Compliant |
| 工作溫度範圍 | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total Qg] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA on standard PCB] | — |
| Configuration | Single N-Channel MOSFET | Single |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSP125H6327XTSA1 |
| 電晶體類型 | — | N-Channel MOSFET |
| Technology | — | SIPMOS (Small Signal Power MOSFET) |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) | — | 120 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| 工作溫度 | — | -55C to +150C (TJ) |
| Channel Mode | — | Enhancement |
| MSL 等級 | — | 1 (Unlimited) |
| Qualification | — | Automotive / Industrial grade |